? 2004 ixys all rights reserved v ces = 600 v i c25 = 75 a v ce(sat) = 2.7 v t fi typ = 48 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 40 a, v ge = 15 v 2.1 2.7 v t j = 125 c 1.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c50a i cm t c = 25 c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 80 a (rbsoa) clamped inductive load @ 600v p c t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque (to-247) 1.13/10nm/lb.in. weight to-247 ad 6 g to-268 4 g ds99147(01/04) g = gate, c = collector, e = emitter, tab = collector features z very high frequency igbt z square rbsoa z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z very fast switching speeds for high frequency applications hiperfast tm igbt ixgh 50n60c2 ixgt 50n60c2 advance technical data to-268 (ixgt) c (tab) c (tab) g c e to-247 ad (ixgh) e g c2-class high speed igbts
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 50n60c2 ixgt 50n60c2 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 40 a; v ce = 10 v, 40 51 s pulse test, t 300 s, duty cycle 2 % c ies 3700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 230 pf c res 50 pf q g 138 nc q ge i c = 40 a, v ge = 15 v, v ce = 0.5 v ces 25 nc q gc 40 nc t d(on) 18 ns t ri 25 ns t d(off) 115 150 ns t fi 48 ns e off 0.38 0.7 mj t d(on) 18 ns t ri 25 ns e on 0.45 mj t d(off) 170 ns t fi 60 ns e off 0.74 mj r thjc 0.31 k/w r thck (to-247) 0.25 k/w inductive load, t j = 25 c i c = 40 a, v ge = 15 v v ce = 480 v, r g = r off = 2 ? inductive load, t j = 125 c i c = 40 a, v ge = 15 v v ce = 480 v, r g = r off = 2 ? to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-268 outline min. recommended footprint (dimensions in inches and mm)
? 2004 ixys all rights reserved ixgh 50n60c2 ixgt 50n60c2 fig. 2. extended output characteristics @ 25 deg. c 0 40 80 120 160 200 240 280 320 012345678910 v c e - volts i c - amperes v ge = 15v 13v 5v 7v 9v 11v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 13v 11v 6v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 0.5 1 1.5 2 2.5 3 3.5 4 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 6v 9v fig. 4. dependence of v ce(sat) on temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j - degrees centigrade v c e ( s a t ) - normalized i c = 40a i c = 20a v ge = 15v i c = 80a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 2.4 2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 567891011121314151617 v g e - volts v c e - volts t j = 25oc i c = 80a 40a 20a fig. 6. input adm ittance 0 20 40 60 80 100 120 140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v g e - volts i c - amperes t j = 125oc 25oc
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 50n60c2 ixgt 50n60c2 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 fig. 7. transconductance 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = 25oc 125oc fig. 8. dependence of turn-off en e r g y o n r g 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 2 4 6 8 10 12 14 16 18 r g - ohms e o f f - millijoules i c = 20a t j = 125oc v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 9. dependence of turn-off en e r g y on i c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 20 30 40 50 60 70 80 i c - amperes e o f f - millijoules r g = 2 ? r g = 10 ? - - - - v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 80a r g = 2 ? r g = 10 ? - - - - v ge = 15v v ce = 480v i c = 40a i c = 20a fig. 11. dependence of turn-off sw itching time on r g 50 100 150 200 250 300 350 400 450 2 4 6 8 10 12 14 16 18 r g - ohms switching time - nanoseconds i c = 20a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 12. dependence of turn-off sw itching tim e on i c 40 60 80 100 120 140 160 180 200 20 30 40 50 60 70 80 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - - r g = 2 ? v ge = 15v v ce = 480v t j = 125oc t j = 25oc
? 2004 ixys all rights reserved ixgh 50n60c2 ixgt 50n60c2 fig. 15. gate charge 0 2 4 6 8 10 12 14 16 0 30 60 90 120 150 q g - nanocoulombs v g e - volts v ce = 300v i c = 40a i g = 10m a fig. 16. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - picofarrads c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off switching time on temperature 20 40 60 80 100 120 140 160 180 200 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 80a t d(off) t fi - - - - - - r g = 2 ? v ge = 15v v ce = 480v i c = 20a i c = 40a i c = 20a fig. 16. maximum transient thermal resistance 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w fig. 14. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 100 200 300 400 500 600 v c e - volts i c - amperes t j = 125 o c r g = 10 ? dv/dt < 10v/ns
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