a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982-1200 fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 200 ma 110 v bv ce o i c = 200 ma 55 v bv ebo i e = 20 ma 4.0 v i ceo v ce = 30 v 5 ma i ces v ce = 55 v 10 ma h fe v ce = 6 v i c = 10 a 15 80 --- c ob v cb = 50 v f = 1.0 mhz 330 pf g p imd 3 h h c v ce = 50 v i cq =150 ma p out = 220 w (pep) 13 40 -32 -30 db dbc % npn silicon rf power transistor HF220-50 description: the HF220-50 is designed for high linearity class ab hf power amplifier applications up to 30 mhz. features: p g = 14 db typical at 220 w/30 mhz imd 3 = -32 dbc typ. at 220 w (pep) omnigold ? metalization system maximum ratings i c 12 a v cbo 110 v v ceo 55 v v ebo 4.0 v p diss 320 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c q q jc 0.7 o c/w package style .500 4l flg order code: asi10614 minimum inches / mm .220 / 5.59 .720 / 18.28 .125 / 3.18 .245 / 6.22 .970 / 24.64 b c d e f g a maximum .255 / 6.48 .980 / 24.89 .7.30 / 18.54 inches / mm .230 / 5.84 h .003 / 0.08 .007 / 0.18 dim k l i j .090 / 2.29 .150 / 3.81 .980 / 24.89 .110 / 2.79 .175 / 4.45 1.050 / 26.67 h i k j .112x45 full r c e b g d f a l ?.125 nom. .125 / 3.18 .495 / 12.57 .505 / 12.83 .280 / 7.11 e e c b
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