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| savantic semiconductor product specification silicon npn power transistors 2n6077 2n6078 2N6079 description with to-66 package low collector saturation voltage high breakdown voltage applications for horizontal deflection output stages of tv?s and crt?s pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n6077 300 2n6078 275 v cbo collector-base voltage 2N6079 open emitter 375 v 2n6077 275 2n6078 250 v ceo collector-emitter voltage 2N6079 open base 350 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a p d total power dissipation t c =25 45 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.28 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2n6077 2n6078 2N6079 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n6077 275 2n6078 250 v ceo(sus) collector-emitter sustaining voltage 2N6079 i c =0.1a ;i b =0 350 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 1.0 v v besat base-emitter saturation voltage i c =5a; i b =0.5a 1.2 v i ceo collector cut-off current v ce = rated v ceo ; i b =0 2.0 ma i cex collector cut-off current v ce =rated v ceo ; v be(off) =1.5v t c =125 0.1 1.0 ma i cbo collector cut-off current v cb =rated v cbo ; i e =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 1.0 ma h fe dc current gain i c =1.2a ; v ce =1v 12 70 f t transition frequency i c =0.5a;v ce =10v;f=1mhz 7 mhz savantic semiconductor product specification 3 silicon npn power transistors 2n6077 2n6078 2N6079 package outline fig.2 outline dimensions |
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