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< silicon rf power semiconductors > RD35HUF2 rohs compliance , silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 1 description RD35HUF2 is mos fet type transistor specifically designed for vhf/uhf rf power amplifiers applications. features 1. supply with tape and reel. 500 units per reel. 2. employing mold package 3. high power and high efficiency pout=43wtyp, drain effi.=60%typ @ vds=12.5v idq=0.5a pin=3.0w f=530mhz pout=45wtyp, drain effi.=72%typ @ vds=12.5v idq=1.0a pin=3.0w f=175mhz 4. integrated gate protection diode applic ation for output stage of high power amplifiers in vhf/uhf band mobile radio sets. rohs compliant RD35HUF2 is a rohs compliant product. rohs compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it is applicable to the following exceptions of rohs directions. 1. lead in high melting temperature type solders. (i.e. tin - lead solders alloys containing more than 85% lead.) 24.60 3.63 3.15 18.00 1 2 . 6 9 1 2 . 9 5 6 . 3 8 5 . 5 6 a a' a - a ' s e c t i o n 0.10 3 . 6 5 2.40 13.40 5 . 8 7 3 . 1 0 0 . 2 2 0 . 3 4 lot no.-g RD35HUF2 RD35HUF2 lot no.-g 3 . 7 0 0.10 outline drawing 4 1 2 3 5 6 7 8 5 6 7 8 pin 1. source (common) 2. open 3. drain 4. source (common) 5. source (common) 6. open 7. gate 8. source (common) unit: mm 1 2 3 4
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 2 absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 40 v vgss gate to source voltage vds=0v - 5 / +1 0 v pch channel dissipation tc=25 c 166 w pin inpu t power zg=zl= 50 6 w id drain current - 1 0 a tch channel temperature - 175 c tstg storage temperature - - 40 to +175 c rth j - c thermal resistance junction to case 0. 9 c /w note: above parameters are guaranteed independently. electrical characteri stics (tc=25c unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss * zero gate voltage drain current v ds =37v, v gs =0v - - 150 a i gss * gate to source leak current v gs =10v, v ds =0v - - 2.5 a v th * gate threshold voltage v d s =12v, i ds =1ma 1.6 2.0 2.4 v pout1 output power - 43 - w ? d1 drain efficiency f=5 30 mhz*,v d s =12.5v, pin= 3.0w , idq= 500ma - 60 - % pout2 output power - 45 - w ? d2 drain efficiency f=175mhz**,v d s =12.5v, pin= 3.0 w, idq= 500ma - 72 - % vswrt load vswr tole rance all phase, v ds =16.3v increased after pout adjusted to 40w ( z g / z l = 5 0 ) b y pin(under f=135mhz**, v ds =12.5v and idq=500ma) 20:1 - - vswr note: above parameters, ratings, limits and conditions are subject to change. * in mitsubishi uhf evaluation board ** in mitsubishi vhf evaluation board
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 3 ty pical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) v ds vs. ciss characteristics 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 v ds (v) c i s s ( p f ) ta=+25 f=1mhz v ds vs. coss characteristics 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 v ds (v) c o s s ( p f ) ta=+25 f=1mhz v ds vs. crss characteristics 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 v ds (v) c r s s ( p f ) ta=+25 f=1mhz v ds -i ds characteristics 0 5 10 15 0 2 4 6 8 10 12 14 v ds (v) i d s ( a ) 3.0v 3.5v 4.0v 4.5v 5.0v ta=+25 v gs =2.7v v gs -i ds characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 v gs (v) i d s ( a ) s ) gm i ds ta=+25 v ds =10v
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 4 vhf - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) frequency characteristics @f=135 to 175mhz 20 30 40 50 60 70 80 130 135 140 145 150 155 160 165 170 175 180 f (mhz) p o u t ( w ) , d r a i n e f f i ( % ) 4 6 8 10 12 14 16 g p ( d b ) , i d d ( a ) pout d gp ta=+25deg.c vds=12.5v, idq=0.5a, pin=3w idd
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 5 vhf - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) output power versus input power input r eturn loss versus output power gain versus output power drain efficiency versus output power 0 10 20 30 40 50 60 0 1 2 3 4 5 6 pin, input power(w) p o u t , o u t p u t p o w e r ( w ) ta=+25deg.c,vds=12.5v, idq=0.5a 175mhz 135mhz 155mhz -30 -25 -20 -15 -10 -5 0 0 10 20 30 40 50 60 pout, output power(w) i r l , i n p u t r e t u r n l o s s ( d b ) ta=+25deg.c,vds=12.5v, idq=0.5a 135mhz 175mhz 155mhz 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 pout, output power(w) , d r a i n e f f i c i e n c y ( % ) ta=+25deg.c,vds=12.5v, idq=0.5a 135mhz 175mhz 155mhz 11 12 13 14 15 16 17 18 19 20 21 0 10 20 30 40 50 60 pout, output power(w) g p , p o w e r g a i n ( d b ) ta=+25deg.c,vds=12.5v, idq=0.5a 155mhz 135mhz 175mhz
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 6 vhf - band typical characteristics (these are only typical curves and devices are not necessar ily guaranteed at these curves.) output power versus biasing current drain efficiency versus biasing current output power versus supply voltage drain efficiency versus supply voltage 30 35 40 45 50 200 400 600 800 1000 1200 1400 idq, biasing current(ma) p o u t , o u t p u t p o w e r ( w ) pin=3w ta=+25deg.c,vds=12.5v 175mhz 135mhz 155mhz 40 50 60 70 80 200 400 600 800 1000 1200 1400 idq, biasing current(ma) , d r a i n e f f i c i e n c y ( % ) pin=3w ta=+25deg.c,vds=12.5v 135mhz 175mhz 155mhz pin=3w ta=+25deg.c, idq=0.5a 20 30 40 50 60 70 10 11 12 13 14 15 vdd, supply voltage(v) p o u t , o u t p u t p o w e r ( w ) 175mhz 155mhz 135mhz pin=3w ta=+25deg.c, idq=0.5a 40 50 60 70 80 10 11 12 13 14 15 vdd, supply voltage(v) , d r a i n e f f i c i e n c y ( % ) 175mhz 155mhz 135mhz
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 7 u hf - band, 380 - 430mhz, typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) output power versus input power input return loss versus output power gain versus output power drain efficiency versus output power 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 pout, output power(w) , d r a i n e f f i c i e n c y ( % ) ta=+25deg.c,vds=12.5v, idq=0.7a 380mhz 430mhz 405mhz 9 10 11 12 13 14 15 16 0 10 20 30 40 50 60 pout, output power(w) g p , p o w e r g a i n ( d b ) ta=+25deg.c,vds=12.5v, idq=0.7a 380mhz 430mhz 405mhz 0 10 20 30 40 50 60 0 1 2 3 4 5 6 pin, input power(w) p o u t , o u t p u t p o w e r ( w ) ta=+25deg.c,vds=12.5v, idq=0.7a 380mhz 405mhz 430mhz -40 -35 -30 -25 -20 -15 -10 -5 0 0 10 20 30 40 50 60 pout, output power(w) i r l , i n p u t r e t u r n l o s s ( d b ) ta=+25deg.c,vds=12.5v, idq=0.7a 380mhz 430mhz 405mhz
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 8 uhf - band, 380 - 430mhz, typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) output power versus input power, digital modulation gain and adjacent channel power ratio versus output power, digital modulation 10 11 12 13 14 15 16 30 40 50 pout, output power(dbm) g p , p o w e r g a i n ( d b ) -60 -50 -40 -30 -20 -10 0 a c p - l o w e r ( d b c ) ta=+25deg.c,vds=12.5v, idq=0.7a ( m o d : / 4 d q p s k , 1 8 k b p s , = 0 . 3 5 , c h - b w / s p = 1 8 k h z / 2 5 k h z ) 405mhz 430mhz 380mhz 380mhz 430mhz gp acp 10 11 12 13 14 15 16 30 40 50 pout, output power(dbm) g p , p o w e r g a i n ( d b ) -60 -50 -40 -30 -20 -10 0 a c p - u p p e r ( d b c ) ta=+25deg.c,vds=12.5v, idq=0.7a ( mod : / 4 dqpsk , 18 kbps , = 0 . 35 , ch - bw / sp = 18 khz / 25 khz ) 405mhz 430mhz 380mhz 380mhz 430mhz gp acp 20 25 30 35 40 45 50 10 20 30 pin, input power(dbm) p o u t , o u t p u t p o w e r ( d b m ) ta=+25deg.c,vds=12.5v, idq=0.7a ( m o d : / 4 d q p s k , 1 8 k b p s , = 0 . 3 5 , c h - b w / s p = 1 8 k h z / 2 5 k h z ) 405mhz 430mhz 380mhz 0 10 20 30 40 10 20 30 pin, input power(dbm) p o u t , o u t p u t p o w e r ( w ) ta=+25deg.c,vds=12.5v, idq=0.7a ( m o d : / 4 d q p s k , 1 8 k b p s , = 0 . 3 5 , c h - b w / s p = 1 8 k h z / 2 5 k h z ) 380mhz 430mhz 405mhz
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 9 uhf - band, 450 - 530mhz, typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) frequency characteristics @f=450 to 530mhz 10 20 30 40 50 60 70 440 450 460 470 480 490 500 510 520 530 540 f (mhz) p o u t ( w ) , d r a i n e f f i ( % ) 4 6 8 10 12 14 16 g p ( d b ) , i d d ( a ) pout d gp idd ta=+25deg.c, vds=12.5v,idq=0.5a, pin=3w
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 10 uhf - band, 450 - 530mhz, typical characteristics (these are only typical curves and devices are not necessaril y guaranteed at these curves.) output power versus input power input return loss versus output power gain versus output power drain efficiency versus output power 9 10 11 12 13 14 15 0 10 20 30 40 50 60 pout, output power(w) g p , p o w e r g a i n ( d b ) ta=+25deg.c,vds=12.5v, idq=0.5a 450mhz 530mhz 490mhz -30 -25 -20 -15 -10 -5 0 0 10 20 30 40 50 60 pout, output power(w) i r l , i n p u t r e t u r n l o s s ( d b ) ta=+25deg.c,vds=12.5v, idq=0.5a 450mhz 530mhz 490mhz 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 pout, output power(w) , d r a i n e f f i c i e n c y ( % ) ta=+25deg.c,vds=12.5v, idq=0.5a 450mhz 530mhz 490mhz 0 10 20 30 40 50 60 0 1 2 3 4 5 6 pin, input power(w) p o u t , o u t p u t p o w e r ( w ) ta=+25deg.c,vds=12.5v, idq=0.5a 450mhz 530mhz 490mhz
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 11 uhf - ban d, 450 - 530mhz, typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) output power versus biasing current drain efficiency versus biasing current output pow er versus supply voltage drain efficiency versus supply voltage pin=3w ta=+25deg.c, idq=0.5a 40 50 60 70 80 10 11 12 13 14 15 vdd, supply voltage(v) , d r a i n e f f i c i e n c y ( % ) 530mhz 490mhz 450mhz pin=3w ta=+25deg.c, idq=0.5a 10 20 30 40 50 60 70 10 11 12 13 14 15 vdd, supply voltage(v) p o u t , o u t p u t p o w e r ( w ) 490mhz 450mhz 530mhz 40 50 60 70 80 200 400 600 800 1000 1200 1400 idq, biasing current(ma) , d r a i n e f f i c i e n c y ( % ) pin=3w ta=+25deg.c,vds=12.5v 450mhz 530mhz 490mhz 30 35 40 45 50 200 400 600 800 1000 1200 1400 idq, biasing current(ma) p o u t , o u t p u t p o w e r ( w ) pin=3w ta=+25deg.c,vds=12.5v 490mhz 450mhz 530mhz
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 12 equivalent circuitry for vhf evaluation board (f=135 - 175mhz) for more information regarding this ev aluation board, refer to application note ?an - vhf - 0 48 ? via via via via via drain bias ml2 ml2 ml2 ml2 ml1 ml1 ml1 ml1 ml1 ml1 ml2 ml2 ml2 ml2 ml1 w=2.0 l=4.0 w=2.0 l=11.0 w=2.0 l=10.0 w=2.0 l=18.0 w=2.2 l=3.0 w=4.0 l=3.0 w=4.0 l=5.0 w=4.6 l=5.3 w=3.6 l=2.9 w=1.8 l=15.0 w=1.2 l=20.0 w=2.0 l=5.0 w=2.0 l=9.0 w=2.0 l=16.0 w=1.2 l=15.0 l1 l2 l3 l4 l5 l6 c2 c3 c4 c5 c6 c7 c1 c9 c8 c11 c10 c12 c13 c14 c15 c16 c 17 c18 c19 c 20 c21 c22 c23 c24 c25 c26 c27 c28 c29 c30 c31 c32 r2 r1 rf in rfout RD35HUF2 gate bias source electrode3 source electrode1 source electrode2 source electrode4 board material: glass epoxy substrate-- er=4.8, tand=0.018 @1ghz micro strip line substrate thickness: ml1, t=0.2 ml2, t=1.1 via hole dimensions, diameter=0.8 length=1.6 unit: w/l/t, mm r3 c1 470 pf 3.2*1.6 chip ceramic capacitors c2, c3 22 pf 1.6*0.8 high q chip ceramic capacitors c4 12 pf 1.6*0.8 high q chip ceramic capacitors c5, c6, c7 68 pf 1.6*0.8 high q chip ceramic capacitors c8, c9 1000 pf 2.0*1.2 chip ceramic capacitors c10, c11 100 pf 1.6*0.8 high q chip ceramic capacitors l1 17 nh - 4turn rolling coil l2, l3 10 nh 1.6*0.8 chip inductors r1 2200 ohm 1.6*0.8 chip resistors r2, r3 16 ohm 2.0*1.2 chip resistors c12, c13, c14, c15,c16 15 pf 2.0*1.2 high q chip ceramic capacitors c17, c18, c19, c20 47 pf 2.0*1.2 high q chip ceramic capacitors c21, c22, c23, c24, c25 22 pf 2.0*1.2 high q chip ceramic capacitors c26 18 pf 2.0*1.2 high q chip ceramic capacitors c27 15 pf 2.0*1.2 high q chip ceramic capacitors c28 24 pf 2.0*1.2 high q chip ceramic capacitors c29 470 pf 3.2*1.6 chip ceramic capacitors c30, c31 1000 pf 2.0*1.2 chip ceramic capacitors c32 220 uf - 35v, electrolytic capacitor l4 8 nh - 2turn rolling coil l5 12 nh - 3turn rolling coil l6 25 nh - 5turn rolling coil
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 13 equivalent circuitry for uhf evaluation board (f=380 - 430mhz) for more information regarding this evaluation board, refer to application note ? an - u hf - 127 ? board material: glass epoxy substrate-- er=4.8, tand=0.018 @1ghz micro strip line substrate thickness: ml1, t=0.2 ml2, t=1.1 via hole dimensions, diameter=0.8 length=1.6 unit: w/l/t, mm RD35HUF2 c1 c2 ml2 rf in ml1 ml1 ml1 ml1 ml1 ml1 via via ml2 ml2 ml2 ml2 via via via c3 l2 c5 c7 c8 r1 l10 c10 c11 c12 c13 c14 c15 c18 c19 w=4.0 l=11.5 w=2.2 l=3.0 w=0.8 l=18.0 w=2.0 l=14.0 w=2.0 l=11.0 w=4.6 l=5.3 w=3.6 l=2.9 w=1.8 l=4.5 w=1.2 l=15.0 w=1.2 l=20.0 w=6.6 l=4.8 w=2.0 l=14.0 w=2.0 l=16.0 characteristic impidance 50ohm characteristic impidance 50ohm c20 rfout drain bias gate bias source electrode1 source electrode2 source electrode4 source electrode3 c4 l1 l11 c16 c17 c6 ml2 ml2 c1 330 pf 3.2*1.6 chip ceramic capacitors c2 6 pf 1.6*0.8 high q chip ceramic c3 27 pf 1.6*0.8 high q chip ceramic c4 9 pf 1.6*0.8 high q chip ceramic c5, c6 18 pf 1.6*0.8 high q chip ceramic c7, c8 1000 pf 2.0*1.2 chip ceramic capacitors r1 2.2 kohm 1.6*0.8 l1, l2 2.2 nh 1.6*0.8 chip inductors c10 33 pf 2.0*1.2 high q chip ceramic c11 33 pf 2.0*1.2 high q chip ceramic c12 18 pf 2.0*1.2 high q chip ceramic c13 18 pf 2.0*1.2 high q chip ceramic c14 5 pf 2.0*1.2 high q chip ceramic c15 1.2 pf 2.0*1.2 high q chip ceramic c16 9 pf 2.0*1.2 high q chip ceramic c17 100 pf 3.2*2.5 high q chip ceramic c18, c19 1000 pf 2.0*1.2 chip ceramic capacitors c20 220 uf - 35v, electrolytic capacitor l10 8 nh - 2turn rolling coil l11 17 nh - 4turn rolling coil
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 14 equivalent circuitry for uhf evaluation board (f=450 - 530mhz) for more information regarding this evaluation board, refer to application note ?an - u hf - 112 ? ml2 board material: glass epoxy substrate-- er=4.8, tand=0.018 @1ghz micro strip line substrate thickness: ml1, t=0.2 ml2, t=1.1 via hole dimensions, diameter=0.8 length=1.6 unit: w/l/t, mm RD35HUF2 c1 c2 ml2 rf in ml2 ml1 ml1 ml1 ml1 ml1 ml1 via via ml2 ml2 ml2 ml2 via via via c3 c4 c6 c5 c7 c8 r1 l1 c10 c11 c12 c13 c14 c15 c18 c19 w=4.0 l=11.5 w=2.2 l=3.0 w=0.8 l=18.0 w=2.0 l=14.0 w=2.0 l=11.0 w=4.6 l=5.3 w=3.6 l=2.9 w=1.8 l=4.5 w=1.2 l=15.0 w=1.2 l=20.0 w=6.6 l=4.8 w=2.0 l=14.0 w=2.0 l=16.0 characteristic impidance 50ohm characteristic impidance 50ohm c20 rfout drain bias gate bias source electrode1 source electrode2 source electrode4 source electrode3 c16 c17 c1 330 pf 3.2*1.6 chip ceramic capacitors c2 6.2 pf 1.6*0.8 high q chip ceramic c3 18 pf 1.6*0.8 high q chip ceramic c4 9 pf 1.6*0.8 high q chip ceramic c5, c6 18 pf 1.6*0.8 high q chip ceramic c7, c8 1000 pf 2.0*1.2 chip ceramic capacitors r1 2.2 kohm 1.6*0.8 c10 33 pf 2.0*1.2 high q chip ceramic c11 33 pf 2.0*1.2 high q chip ceramic c12 2.4 pf 2.0*1.2 high q chip ceramic c13 12 pf 2.0*1.2 high q chip ceramic c14 3.3 pf 2.0*1.2 high q chip ceramic c15 5.1 pf 2.0*1.2 high q chip ceramic c16 9.1 pf 2.0*1.2 high q chip ceramic c17 100 pf 3.2*2.5 high q chip ceramic c18, c19 1000 pf 2.0*1.2 chip ceramic capacitors c20 220 uf - 35v, electrolytic capacitor l1 29 nh - 6turn rolling coil
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 15 input / output impedance vs. f requency characteristics zout*: complex conjugate of output impedance zin*: complex conjugate of input impedance f zout* (mhz) (ohm) 135 1.77-j0.80 155 1.83-j0.59 175 1.38-j0.07 f=175mhz f=155mhz f=135mhz zout* ( f=135, 155, 175mhz) zo=10ohm @pin=3w, vds=12.5v, idq=0.5a f zin* (mhz) (ohm) 135 6.64+j0.83 155 6.43+j0.57 175 3.84+j2.13 f=135mhz f=155mhz f=175mhz zin* ( f=135, 155, 175mhz) zo=10ohm @pin=3w, vds=12.5v, idq= 0.5a
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 16 input / output impedance vs. frequency characteristics zout*: complex conjugate of output impedance zin*: complex conjugate of input impedance f zout* (mhz) (ohm) 380 1.44-j0.41 405 1.43-j0.30 430 1.30-j0.19 f=380mhz f=405mhz f=430mhz zout* ( f=380, 405, 430mhz) zo=10ohm @pin=3w, vds=12.5v, idq=0.5a f zin* (mhz) (ohm) 380 1.34+j0.00 405 1.43+j0.58 430 1.52+j1.11 f=380mhz f=405mhz f=430mhz zin* ( f=380, 405, 430mhz) zo=10ohm @pin=3w, vds=12.5v, idq= 0.5a
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 17 input / output impedance vs. frequency characteristics zout*: complex conjugate of output impedance zin*: complex conjugate of input impedance f zout* (mhz) (ohm) 450 1.59+j0.69 490 1.57+j0.91 530 1.14+j1.24 f=450mhz f=490mhz f=530mhz zout* ( f=450, 490, 530mhz) zo=10ohm @pin=3w, vds=12.5v, idq=0.5a f zin* (mhz) (ohm) 450 1.79+j0.77 490 1.99+j1.38 530 2.06-j1.69 f=450mhz f=490mhz f=530mhz zin* ( f=450, 490, 530mhz) zo=10ohm @pin=3w, vds=12.5v, idq= 0.5a
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 18 small signal paramete r of RD35HUF2 bias condition: vds=12.5v, idq=0.5a freq s11 s21 s12 s22 [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.884 -173.6 4.946 71.4 0.010 -15.3 0.829 -173.1 135 0.896 -174.0 3.449 64.9 0.009 -20.1 0.848 -173.1 150 0.903 -174.2 3.020 62.5 0.009 -20.8 0.858 -173.0 175 0.911 -174.5 2.471 58.7 0.008 -23.1 0.872 -173.2 200 0.920 -174.7 2.059 55.1 0.008 -25.0 0.885 -173.4 250 0.933 -175.3 1.473 49.7 0.006 -27.6 0.906 -173.9 300 0.946 -175.8 1.109 45.1 0.005 -27.3 0.922 -174.5 350 0.954 -176.4 0.857 41.9 0.004 -24.3 0.935 -175.0 400 0.958 -177.0 0.687 39.9 0.003 -19.0 0.947 -175.7 450 0.964 -177.5 0.552 37.6 0.003 -8.6 0.954 -176.3 500 0.968 -178.0 0.458 35.5 0.002 8.3 0.960 -177.0 530 0.970 -178.3 0.409 36.4 0.002 20.0 0.965 -177.2 550 0.971 -178.5 0.393 35.9 0.002 32.5 0.966 -177.4 600 0.970 -179.4 0.350 35.5 0.002 54.8 0.966 -178.2 650 0.971 -179.9 0.299 33.7 0.002 72.1 0.968 -178.8 700 0.974 179.4 0.268 34.1 0.003 84.6 0.971 -179.4 750 0.976 178.8 0.240 34.6 0.004 92.8 0.974 179.9 800 0.977 178.1 0.209 34.8 0.004 97.7 0.979 179.2 850 0.975 177.3 0.191 34.0 0.005 102.0 0.978 177.9 900 0.976 176.6 0.179 36.2 0.006 104.0 0.980 177.1 950 0.977 175.7 0.162 35.9 0.006 106.7 0.981 176.4 1000 0.978 174.7 0.152 36.8 0.007 107.9 0.984 175.6 1050 0.979 173.7 0.141 37.1 0.008 110.6 0.986 174.7 1100 0.979 172.7 0.132 39.1 0.009 110.5 0.985 173.7
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 19 attention: 1. high temperature ; this product might have a heat generation while operation,please take notice that have a possibility to receive a burn to touch the operating product directly or touc h the product until cold after switch off. at the near the product,do not place the combustible material that have possibilities to arise the fire. 2.generation of high frequency power ; this product generate a high frequency power. please take notice th at do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.before use; before use the product,please design the equipment in consideration of the risk for human and electric wa ve obstacle for equipment. precautions for the use of mitsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the forma l specification sheet. for copies of the formal specification sheets, please contact one of our sales offices. 2. rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for u se in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed ne cessary for critical communications elements. examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on - off freq uency during transmitting, especially for systems that may have a high impact to society. 3. rd series products use mosfet semiconductor technology. they are sensitive to esd voltage therefore appropriate esd precautions are required. 4. in the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltage. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s original form. 9. for additional ?safety first? in your circuit design and notes regarding t he materials, please refer the last page of this data sheet . 10. please refer to the additional precautions in the formal specification sheet.
< silicon rf power semiconductors > RD35HUF2 rohs compliance, silicon mosfet power transistor, 175mhz, 530mhz, 35w publication date : may 2011 20 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur wit h them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (i i) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers i n the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these ma terials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracie s or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric co rporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under c ircumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these p roducts or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contra ry to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.

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