www.irf.com 1 co-packaged hexfet ? power mosfet and schottky diode ideal for buck regulator applications n-channel hexfet low v f schottky rectifier generation 5 technology so-8 footprint IRF7353D1 fetky ? ? ? ? ? mosfet / schottky diode parameter maximum units r ja junction-to-ambient 62.5 c/w thermal resistance ratings description v dss = 30v r ds(on) = 0.029 ? schottky vf = 0.39v the fetky family of co-packaged mosfets and schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. generation 5 hexfet power mosfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combinining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. so-8 06/10/02 notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 9) starting t j = 25c, l = 10mh, r g = 25 ? , i as = 4.0a i sd 4.0a, di/dt 74a/s, v dd v (br)dss , t j 150c surface mounted on fr-4 board, t 10sec. top view 8 1 2 3 4 5 6 7 a a s g d d k k parameter maximum units i d @ t a = 25c continuous drain current 6.5 a i d @ t a = 70c 5.2 i dm pulsed drain current ? 52 p d @t a = 25c power dissipation 2.0 w p d @t a = 70c 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt ? -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c absolute maximum ratings (t a = 25c unless otherwise noted) pd - 91802b
IRF7353D1 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ? ? v v gs = 0v, i d = 250a r ds(on) static drain-to-source on-resistance ? 0.023 0.032 v gs = 10v, i d = 5.8a ? 0.032 0.046 v gs = 4.5v, i d = 4.7a v gs(th) gate threshold voltage 1.0 ? ? v v ds = v gs , i d = 250a g fs forward transconductance ? 14 ? s v ds = 24v, i d = 5.8a i dss drain-to-source leakage current ? ? 1.0 v ds = 24v, v gs = 0v ??25 v ds = 24v, v gs = 0v, t j = 55c i gss gate-to-source forward leakage ? ? 100 v gs = 20v gate-to-source reverse leakage ? ? -100 v gs = -20v q g total gate charge ? 22 33 i d = 5.8a q gs gate-to-source charge ? 2.6 3.9 nc v ds = 24v q gd gate-to-drain ("miller") charge ? 6.4 9.6 v gs = 10v (see figure 8) t d(on) turn-on delay time ? 8.1 12 v dd = 15v t r rise time ? 8.9 13 i d = 1.0a t d(off) turn-off delay time ? 26 39 r g = 6.0 ? t f fall time ? 17 26 r d = 15 ? c iss input capacitance ? 650 ? v gs = 0v c oss output capacitance ? 320 ? pf v ds = 25v c rss reverse transfer capacitance ? 130 ? ? = 1.0mhz (see figure 7) mosfet electrical characteristics @ t j = 25c (unless otherwise specified) ? a na ns parameter min. typ. max. units conditions i s continuous source current (body diode) ? ? 2.5 a i sm pulsed source current ( body diode) ? ? 30 v sd body diode forward voltage ? 0.78 1.0 v t j = 25c, i s = 1.7a, v gs = 0v t rr reverse recovery time (body diode) ? 45 68 ns t j = 25c, i f = 1.7a q rr reverse recovery charge ? 58 87 nc di/dt = 100a/s ? mosfet source-drain ratings and characteristics parameter max. units. conditions i f(av) max. average forward current 2.7 50% duty cycle. rectangular wave, t a = 25c 1.9 t a = 70c i sm max. peak one cycle non-repetitive 120 5s sine or 3s rect. pulse following any rated surge current 11 10ms sine or 6ms rect. pulse load condition & with v rrm applied a a schottky diode maximum ratings schottky diode electrical specifications v ma parameter max. units conditions v fm max. forward voltage drop 0.50 i f = 1.0a, t j = 25c 0.62 i f = 2.0a, t j = 25c 0.39 i f = 1.0a, t j = 125c 0.57 i f = 2.0a, t j = 125c . i rm max. reverse leakage current 0.06 v r = 30v t j = 25c 16 t j = 125c c t max. junction capacitance 92 pf v r = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 3600 v/ s rated v r see fig. 14
IRF7353D1 www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature power mosfet characteristics 1 10 100 0.1 1 10 20 s pulse width t = 25c a j ds v , drain-to-source volta g e (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source volta g e (v) d i , drain-to-source current (a) 20 s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs v , gate-to-source volta g e ( v ) d i , drain-to-source current (a) a v = 10v 20s pulse width ds -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 5.8a
IRF7353D1 4 www.irf.com power mosfet characteristics fig 5. typical on-resistance vs. drain current fig 6. typical on-resistance vs. gate voltage r ds (on) , drain-to-source on resistance ( ? ) 0.020 0.024 0.028 0.032 0.036 0.040 0 10203040 a i , drain current (a) d v = 10v gs v = 4.5v gs r ds (on) , drain-to-source on resistance ( ? ) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0 3 6 9 12 15 a gs v , gate-to-source volta g e (v) i = 5.8a d fig 8. typical gate charge vs. gate-to-source voltage fig 7. typical capacitance vs. drain-to-source voltage 0 300 600 900 1200 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss 0 10 20 30 40 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 5.8a v = 15v ds
IRF7353D1 www.irf.com 5 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 9. maximum effective transient thermal impedance, junction-to-ambient power mosfet characteristics fig 10. typical source-drain diode forward voltage 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain volta g e (v) i , reverse drain current (a) sd sd a
IRF7353D1 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage reverse current - i r (ma) fig. 12 -typical forward voltage drop characteristics 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 fm f instantaneous forward current - i (a) forward volta g e dro p - v ( v ) t = 150c t = 125c t = 2 5c j j j
fig.14 - maximum allowable ambient temp. vs. forward current 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 f(av) a avera g e forw ard c urrent - i ( a ) allowable am bient temperature - (c) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 v = 80 % r ated r = 62.5c /w square wave thja r dc forward voltage drop - v f (v)
IRF7353D1 www.irf.com 7 so-8 package details k x 45 c 8x l 8x h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inch es m illim et ers m in m a x m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 ba sic 1.27 b asic e1 .025 ba sic 0.635 b as ic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. d im en sion s a re sh ow n in millime te r s (in c he s). 4. ou tlin e con f orm s to jed e c ou tline ms -012aa . dimension does not include mold protrusions mold p r otr u sions n ot to exce ed 0.25 (.006). d ime ns ion s is th e le n gth of lea d for solde r in g to a su b stra te.. 5 6 a1 e1 part marking
IRF7353D1 8 www.irf.com 330.00 (12.992) m a x. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/02
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