savantic semiconductor product specification silicon pnp power transistors 2n6107 2n6109 2N6111 description with to-220 package complement to npn type: 2n6288; 2n6290 ;2n6292 applications power amplifier and switching circuits applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2n6107 -40 2n6109 -60 v cbo collector- base voltage 2N6111 open emitter -80 v 2n6107 -30 2n6109 -50 v ceo collector- emitter voltage 2N6111 open base -70 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a i cm collector current-peak -10 a i b base current -3 a p t total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 3.125 /w fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2n6107 2n6109 2N6111 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n6107 -30 2n6109 -50 v ceo(sus) collector-emitter sustaining voltage 2N6111 i c =-0.1a ;i b =0 -70 v v cesat collector-emitter saturation voltage i c =-7a;i b =-3a -3.5 v v be base-emitter on voltage i c =-7a ; v ce =-4v -3.0 v 2n6107 v ce =-20v; i b =0 2n6109 v ce =-40v; i b =0 i ceo collector cut-off current 2N6111 v ce =-60v; i b =0 -1.0 ma 2n6107 v ce =-40v; v be =-1.5v v ce =-30v; be =-1.5v,t c =125 -0.1 -2.0 2n6109 v ce =-60v; v be =-1.5v v ce =-50v; be =-1.5v,t c =125 -0.1 -2.0 i cex collector cut-off current 2N6111 v ce =-80v; v be =-1.5v v ce =-70v; be =-1.5v,t c =125 -0.1 -2.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma 2n6107 i c =-2a ; v ce =-4v 2n6109 i c =-2.5a ; v ce =-4v h fe-1 dc current gain 2N6111 i c =-3a ; v ce =-4v 30 150 h fe-2 dc current gain i c =-7a ; v ce =-4v 2.3 f t transition frequency i c =-0.5a ; v ce =-4v;f=1mhz 10 mhz
savantic semiconductor product specification 3 silicon pnp power transistors 2n6107 2n6109 2N6111 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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