inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistors 2N4914 description low collector saturation voltage- : v ce(sat) = 1.5v(max.)@ i c = 5a dc current gain- : h fe = 25-100 @i c = 2.5a complement to type 2n4905 applications designed for general purpose use in power amplifier and switching circuits. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.0 /w symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i b base current-continuous 1 a p c collector power dissipation@t c =25 87.5 w t j junction temperature 200 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistors 2N4914 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 200ma ; i b = 0 60 v v ce (sat)-1 collector-emitter saturation voltage i c = 2.5a; i b = 0.25a 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 5a; i b = 1a 1.5 v v be( on ) base-emitter on voltage i c = 2.5a; v ce = 2v 1.4 v i ceo collector cutoff current v ce = 60v; i b = 0 1.0 ma i cbo collector cutoff current v cb = 60v; i e = 0 0.1 ma i cev collector cutoff current v ce = 60v; v be( off ) = -1.5v v ce = 60v; v be( off ) = -1.5v, t c =150 0.1 2.0 ma i ebo emitter cutoff current v eb =-5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 2.5a; v ce = 2v 25 100 h fe-2 dc current gain i c = 5a; v ce = 2v 7 f t current-gain bandwidth product i c = 1a; v ce = 10v; f test = 1.0mhz 4 mhz
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