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| R N N-CHANNEL MOSFET JCS650 MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS 28.0 A 200 V 0.085 103 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 81pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 81pF) dv/dt RoHS ORDER MESSAGE Order codes JCS650C-O-C-N-B JCS650F-O-F-N-B Halogen Free NO NO Device Weight 2.15 g(typ) 2.20 g(typ) Marking JCS650C JCS650F Package TO-220C TO-220MF Packaging Tube Tube 201008A 1/10 R JCS650 ABSOLUTE RATINGS (Tc=25) JCS650C 200 28 17.7 28* 17.7* JCS650F Value Unit V A A Parameter Drain-Source Voltage Drain Current Symbol VDSS ID T=25 T=100 IDM -continuous 1 Drain Current - pulse note 1 Gate-Source Voltage 2 Single Pulsed Avalanche Energynote 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Current note 1 3 Peak Diode Recovery dv/dt note 3 112 112* A VGSS 30 V EAS 575 mJ IAR 28 A EAR 15.8 mJ dv/dt 5.5 V/ns Power Dissipation PD TC=25 -Derate above 25 TJTSTG 158 50 W 1.265 0.40 W/ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55+150 TL 300 * *Drain current limited by maximum junction temperature 201008A 2/10 R JCS650 Tests conditions Min Typ Max Units Parameter Symbol ELECTRICAL CHARACTERISTICS Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250A 2.0 4.0 V BVDSS ID=250A, VGS=0V 200 V BVDSS/ ID=250A, referenced to 25 TJ VDS=200V,VGS=0V, TC=25 VDS=160V, IGSSF VDS=0V, TC=125 - 0.19 - V/ IDSS - - 1 10 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=14A VDS = 40V, ID=14Anote 4 VDS=25V, VGS =0V, f=1.0MHZ - 0.068 0.085 gfs - 24 - S Dynamic Characteristics Ciss Coss Crss 2879 3742 362 470 81 105 pF pF pF 201008A 3/10 R JCS650 td(on) tr td(off) tf Qg Qgs Qgd VDS =160V , ID=28A VGS =10V note 45 VDD=100V,ID=28A,RG=25 note 45 28 69 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 251 494 309 617 220 412 103 136 16 53 - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 28 A ISM - - 112 A VGS=0V, IS=28.0A - - 1.40 V trr Qrr VGS=0V, IS=28.0A dIF/dt=100A/s (note 4) - 218 1.91 - ns C THERMAL CHARACTERISTIC JCS650C 0.79 62.5 Notes: 1Pulse width limited by maximum junction temperature 2L=1.1mH, IAS=28A, VDD=50V, RG=25 ,Starting TJ=25 3ISD 28A,di/dt 200A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature Max JCS650F 2.48 62.5 Parameter Thermal Resistance, Junction to Case Symbol Rth(j-c) Unit /W /W Rth(j-A) Thermal Resistance, Junction to Ambient 1 2L=1.1mH, IAS=28A, VDD=50V, RG=25 , TJ=25 3ISD 28A,di/dt 200A/s,VDDBVDSS, TJ=25 4300s,2 5 201008A 4/10 R JCS650 ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics ID Drain Current[A] ID [A] VGS 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Top 10 25 150 1 10 Notes: 1. 250s pulse test 2. TC=25 1 10 0.1 Notes: 1.250s pulse test 2.VDS=40V 2 4 6 8 10 VDS [V] VGS Gate-Source Voltage[V] On-Resistance Variation vs. Drain Current and Gate Voltage 0.10 Body Diode Forward Voltage Variation vs. Source Current and Temperature R DS (on ) Drain-Source On Resistance [] VGS=10V 0.08 IDR Reverse Drain Current[A] 0.09 10 150 25 0.07 1 VGS=20V 0.06 Note:Tj=25 0.05 0 2 4 6 8 10 12 14 16 18 20 22 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 ID [A] V S D Source-Drain voltage[V] Capacitance Characteristics 8x10 7x10 3 Gate Charge Characteristics 12 3 Capacitance [pF] VGS Gate Source Voltage[V] 6x10 5x10 4x10 3x10 2x10 3 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd VDS=160V 10 VDS=100V VDS=40V 8 3 3 6 3 4 3 2 1x10 3 0 10 -1 0 V DS Drain-Source Voltage [V] 10 0 10 1 0 10 20 30 40 50 60 70 80 90 100 110 120 Qg Toltal Gate Charge [nC] 201008A 5/10 R JCS650 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation On-Resistance Variation vs. Temperature vs. Temperature 1.2 4.0 3.5 BVDS(Normalized) (Normalized) ( on ) 1.1 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 1.0 0.9 Notes: 1. VGS=0V 2. ID=250A -50 -25 0 25 50 75 100 125 150 RD 0.8 -75 Notes: 1. VGS=10V 2. ID=14A -50 -25 0 25 50 75 100 125 150 T j [] T j [] Maximum Safe Operating Area For JCS650C 10 2 Maximum Safe Operating Area For JCS650F 10 2 Operation in This Area is Limited by RDS(ON) 10s 100s 1ms 10ms 100ms Operation in This Area is Limited by RDS(ON) 10s 100s I D Drain Current [A] ID Drain Current [A] 10 1 10 1 1ms 10ms 10 0 10 -1 Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 DC 10 0 100ms Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 DC 10 VD S Drain-Source Voltage [V] 10 1 10 2 10 -1 10 VD S Drain-Source Voltage [V] 10 1 10 2 Maximum Drain Current vs. Case Temperature 30 25 ID Drain Current [A] 20 15 10 5 0 25 50 75 100 125 150 TC Case Temperature [] 201008A 6/10 R JCS650 Transient Thermal Response Curve For JCS650C ELECTRICAL CHARACTERISTICS (curves) (t) Thermal Response 1 D = 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 N 1 2 3 o te s : Z J C (t)= 0 .7 9 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) JC 0 .0 1 s in g le p u ls e P Z DM t1 t2 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] Transient Thermal Response Curve For JCS650F (t) Thermal Response D = 0 .5 1 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 0 .1 N 1 2 3 o te s : Z J C (t)= 2 .4 8 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) JC P Z DM s in g le p u ls e 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 t1 t2 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 201008A 7/10 R JCS650 Unitmm PACKAGE MECHANICAL DATA TO-220C 201008A 8/10 R JCS650 Unitmm PACKAGE MECHANICAL DATA TO-220MF 201008A 9/10 R JCS650 NOTE Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 1. 2. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 201008A 10/10 |
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