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| November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V, RDS(ON) = 0.070 @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-8 package: small footprint (40% less than SO-8); low profile(1mmthick); maximum power comparable to SO-8. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 P 08 83 5 6 S2 7 8 4 3 2 1 G2 pin 1 SuperSOT -8 TM G1 S1 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted FDR8308P Units VDSS VGSS ID PD TJ,TSTG RJA RJC Drain-Source Voltage Gate-Source Voltage Draint Current - Continuous - Pulsed Maximum Power Dissipation (Note 1) (Note 1) -20 8 -3.2 -20 0.8 -55 to 150 V V A W C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 156 40 C/W C/W FDR8308P Rev.C (c) 1998 Fairchild Semiconductor Corporation Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS (TA = 25OC unless otherwise noted ) Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A ID = -50 A, Referenced to 25 C VDS = -16 V, VGS = 0 V TJ = 55C VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -50 A, Referenced to 25 oC VGS = -4.5 V, ID = -3.2 A TJ = 125C VGS = -2.5 V, ID = -2.7 A o -20 -16 -1 -10 100 -100 V mV /oC A A nA nA BVDSS/TJ IDSS IGSS IGSS VGS(th) Gate - Body Leakage Current Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance -0.4 -0.9 2.5 0.038 0.053 0.054 -1.5 V mV /oC VGS(th)/TJ RDS(ON) 0.05 0.075 0.07 ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS = -4.5 V, VDS = -5 V VDS = -4.5 V, ID = -3.2 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz -20 13 1240 270 100 A S pF pF pF 16 27 65 50 19 ns ns ns ns nC nC nC DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2) VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 8 15 45 30 VDS = -10 V, ID = -4.5 A, VGS = -4.5 V 13 1.8 3 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Notes: Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A (Note 2) -0.67 -0.7 -1.2 A V 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. 156OC/W on a 0.0025 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDR8308P Rev.C Typical Electrical Characteristics 20 - I D , DRAIN-SOURCE CURRENT (A) -3.0V R DS(on) , NORMALIZED 16 -2.5V DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V 2.5 2 VGS = -2.0 V 12 1.5 -2.5V -3.0V -3.5V 8 -2.0V 1 -4.5V 4 -1.5V 0 0 1 -V DS 0.5 2 3 4 5 0 5 10 - ID , DRAIN CURRENT (A) 15 20 , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.2 R DS(ON) , ON-RESISTANCE (OHM) DRAIN-SOURCE ON-RESISTANCE I D = -3.2A 1.4 I D = -1.6A 0.15 VGS = -4.5V R DS(ON) , NORMALIZED 1.2 0.1 1 TA = 125o C 0.05 0.8 25C 0 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) 1 2 3 4 5 - VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VDS = -5V - I D , DRAIN CURRENT (A) 12 TJ =-55C 25C 125C - I S , REVERSE DRAIN CURRENT (A) 15 15 VGS = 0V TJ = 125C 25C 0.1 1 9 -55C 6 0.01 3 0 0.9 0.001 1.2 1.5 1.8 2.1 2.4 2.7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS , GATE TO SOURCE VOLTAGE (V) -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR8308P Rev.C Typical Electrical Characteristics (continued) 5 -V GS , GATE-SOURCE VOLTAGE (V) 2500 I D = -3.2A 4 VDS = -5V CAPACITANCE (pF) Ciss -10V -15V 1000 3 400 200 100 50 0.1 Coss 2 Crss f = 1 MHz VGS = 0 V 0.3 1 3 10 20 1 0 0 3 6 9 12 15 Q g , GATE CHARGE (nC) -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 30 S(O L N) IM IT 100 us 1m s 10m s 10 0m s 1s 50 - ID, DRAIN CURRENT (A) 5 RD 40 POWER (W) SINGLE PULSE R JA= 156C/W TA = 25C 30 0.5 DC VGS = -4.5V SINGLE PULSE RJA = 156C/W TA = 25C A 0.2 0.5 1 2 5 10 20 30 20 0.05 10 0.01 0.1 0 0.0001 0.001 0.01 0.1 1 10 100 300 - VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse R JA (t) = r(t) * R JA R JA = 156 C/W P(pk) t1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1/ t 2 0.01 0.1 t1 , TIME (sec) 1 10 100 300 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermal response will change depending on the circuit board design. FDR8308P Rev.C SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label F63TNR Label Antistatic Cover Tape Conductive Embossed Carrier Tape F852 831N Pin 1 F852 831N F852 831N F852 831N SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 3,000 13" Dia 343x64x343 5,000 0.0416 0.5615 L84Z TNR 500 7" Dia 184x187x47 1,000 0.0416 0.0980 SSOT-8 Unit Orientation 343mm x 342mm x 64mm Intermediate box for Standard Option F63TNR Label F63TNR Label F63TNR Label sample 184mm x 184mm x 47mm Pizza Box for L84Z Option F63TNR Label LOT: CBVK741B019 FSID: FDR835N QTY: 3000 SPEC: SSOT-8 Tape Leader and Trailer Configuration: Figure 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: QARV: (F63TNR)2 Carrier Tape Cover Tape Trailer Tape 160mm minimum Components Leader Tape 390mm minimum November 1998, Rev. A SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figure 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-8 (12mm) A0 4.47 +/-0.10 B0 5.00 +/-0.10 W 12.0 +/-0.3 D0 1.55 +/-0.05 D1 1.50 +/-0.10 E1 1.75 +/-0.10 E2 10.25 min F 5.50 +/-0.05 P1 8.0 +/-0.1 P0 4.0 +/-0.1 K0 1.37 +/-0.10 T 0.280 +/-0.150 Wc 9.5 +/-0.025 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-8 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 12mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 5.906 150 7.00 178 Dim W1 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 Dim W2 0.724 18.4 0.724 18.4 Dim W3 (LSL-USL) 0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4 12mm 13" Dia (c) 1998 Fairchild Semiconductor Corporation November 1998, Rev. A SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SuperSOTTM-8 (FS PKG Code 34, 35) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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