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Preliminary Datasheet
BCR12CM-16LH
Triac Medium Power Use
Features
IT (RMS) : 12 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 50 mA or 35mA(IGT item:1) High Commutation The Product guaranteed maximum junction temperature 150C Planar Type R07DS0261EJ0100 Rev.1.00 Mar 09, 2011
Outline
RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4
1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal
3 1 12 3
Applications
Switching mode power supply, motor control, heater control, and other general purpose AC power control applications
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Notes: 1. Gate open. Parameter RMS on-state current Surge on-state current I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Symbol VDRM VDSM Voltage class 16 800 960 Unit V V
Ratings 12 120 60 5 0.5 10 2 -40 to +150 -40 to +150 2.0
Unit A A A2s W W V A C C g
Conditions Commercial frequency, sine full wave 360conduction, Tc = 123C Note3 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current
Typical value
R07DS0261EJ0100 Rev.1.00 Mar 09, 2011
Page 1 of 7
BCR12CM-16LH
Preliminary
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM BCR12CM-16LH-1 (IGT item: 1) Min. -- -- Typ. -- -- Max. 2.0 1.5 BCR12CM-16LH Unit Min. -- -- Typ. -- -- Max. 2.0 1.5 mA V Test conditions Tj = 150C VDRM applied Tc = 25C, ITM = 20 A instantaneous measurement Tj = 25C, VD = 6 V RL = 6 , RG = 330 Tj = 25C, VD = 6 V RL = 6 , RG = 330
Gate trigger voltageNote2
-- -- -- -- -- -- VGD
-- -- -- -- -- -- 0.2 0.1
-- -- -- -- -- -- -- -- -- --
1.5 1.5 1.5 35 35 35 -- -- 1.8 --
-- -- -- -- -- -- 0.2 0.1 -- 13
-- -- -- -- -- -- -- -- -- --
1.5 1.5 1.5 50 50 50 -- -- 1.8 --
V V V mA mA mA V
Gate trigger curentNote2
Gate non-trigger voltage
Thermal resistance Critical-rate of decay of on-state Note5 commutating current Notes: 2. 3. 4. 5.
Rth (j-c) (di/dt)c
-- 7
Tj = 125C VD = 1/2 VDRM Tj = 150C V VD = 1/2 VDRM Note3,4 C/W Junction to case A/ms Tj = 125C (dv/dt)c < 100 V/s
Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm apart from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time (di/dt)c Time Time VD
1. Junction temperature Tj = 125C 2. Peak off-state voltage VD = 400 V 2. Rate of rise of off-state commutating voltage (dv/dt)c < 100 V/s
Main Current Main Voltage (dv/dt)c
R07DS0261EJ0100 Rev.1.00 Mar 09, 2011
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BCR12CM-16LH
Preliminary
Performance Curve
Maximum On-State Characteristics
102 Tj = 25C 200
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
160
101
120
100
80
40
10-1 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 100
101
102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
102
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs. Junction Temperature
103 Typical Example
Gate Voltage (V)
VGM = 10V 101 VGT = 1.5V 100
PG(AV) = 0.5W PGM = 5W IGM = 2A
102
IFGT I IRGT III IRGT I VD = 6V RL = 6
IGT = 50mA IGTitem1 = 35mA VGD = 0.1V 102 103 104
10-1 1 10
101 -40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
103 Typical Example
Maximum Transient Thermal Impedance Characteristics (Junction to case)
Transient Thermal Impedance (C/W)
102 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 103 104
102
VD = 6V RL = 6 101 -40 0 40 80 120 160
100
101
102
Junction Temperature (C)
Conduction Time (Cycles at 60Hz)
R07DS0261EJ0100 Rev.1.00 Mar 09, 2011
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BCR12CM-16LH
Preliminary
Allowable Case Temperature vs. RMS On-State Current
160
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
Case Temperature (C)
14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 360 Conduction Resistive, inductive loads
140 120 Curves apply regardless of conduction angle 100 80 60 40 360 Conduction 20 Resistive, inductive loads 0 0 2 4 6 8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs. RMS On-State Current
160
Allowable Ambient Temperature vs. RMS On-State Current
160
Ambient Temperature (C)
120 100 80 60
120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3
Ambient Temperature (C)
140
All fins are black painted aluminum and greased
140 120 100 80 60 40 20 0 0
Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads
Curves apply 40 regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 2 4 6 8 10
12
14
16
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Repetitive Peak Off-State Current vs. Junction Temperature
Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
106 Typical Example 105 103
Holding Current vs. Junction Temperature
Typical Example
104
102
103
102 -40
0
40
80
120
160
101 -40
0
40
80
120
160
Junction Temperature (C)
Junction Temperature (C)
R07DS0261EJ0100 Rev.1.00 Mar 09, 2011
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BCR12CM-16LH
Latching Current vs. Junction Temperature
103 Distribution T2+, G- Typical Example
Preliminary
Breakover Voltage vs. Junction Temperature
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
160 140 120 100 80 60 40 20 0 -40 0 40 80 120 160 Typical Example
Latching Current (mA)
102
101 T2-, G- Typical Example T2+, G+ Typical Example 100 -40 0 40 80 120 160
Junction Temperature (C)
Junction Temperature (C)
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
160 140 120 100 80 I Quadrant 60 40 20 0 101 102 103 104 Typical Example Tj = 125C III Quadrant
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C)
Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C)
160 140 120 100 80 I Quadrant 60 40 20 0 101 102 103 104 Typical Example Tj = 150C III Quadrant
Rate of Rise of Off-State Voltage (V/s)
Rate of Rise of Off-State Voltage (V/s)
Commutation Characteristics (Tj=125C)
102
Commutation Characteristics (Tj=150C)
102
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
III Quadrant
10
1
Minimum Value (IGTitem1)
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
101
III Quadrant
100 100
Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz 101
I Quadrant Minimum Value
102
100 100
Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz
I Quadrant
101
102
Rate of Decay of On-State Commutating Current (A/ms)
Rate of Decay of On-State Commutating Current (A/ms)
R07DS0261EJ0100 Rev.1.00 Mar 09, 2011
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BCR12CM-16LH
Gate Trigger Characteristics Test Circuits
6 6
Preliminary
Recommended Circuit Values Around The Triac
Load C1
6V V
A 330
6V V
A 330
R1
C0
R0
Test Procedure I 6
Test Procedure II
C1 = 0.1 to 0.47F C0 = 0.1F R1 = 47 to 100 R0 = 100
6V V
A 330
Test Procedure III
R07DS0261EJ0100 Rev.1.00 Mar 09, 2011
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BCR12CM-16LH
Preliminary
Package Dimensions
Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code MASS[Typ.] 2.0g
Unit: mm
10.5Max
4.5 1.3
3.2
16Max
3.8Max
1.0
12.5Min
0.8
7.0
3.6
2.54
2.54
0.5
2.6
Ordering Information
Orderable Part Number BCR12CM-16LH#B00 BCR12CM-16LH-1#B00 Packing Bag Bag Quantity 100 pcs. 100 pcs. Remark Straight type Straight type, IGT item:1
Note : Please confirm the specification about the shipping in detail.
R07DS0261EJ0100 Rev.1.00 Mar 09, 2011
4.5Max
Page 7 of 7
Notice
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