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| High Performance InGaAs p-i-n Photodiode 13PD150-TO The 13PD150-TO, an InGaAs photodiode with a 150m-diameter photosensitive region packaged in a TO-46 header, is intended for moderate-to-high speed applications. Efficient coupling to mulit-mode fiber in active device receptacles is enabled by the relatively large photosensitive area. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by hermetic sealing and a 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). Chips can also be attached and wire bonded to customer supplied or other specified packages. Headers are available with either a lensed or flat window cap. Features Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity Device Characteristics: Parameters Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Test Conditions -5V -5V 1300nm - Min 0.5 1.50 0.7 - Typ - Max -15 Units Volts nA pF 2.5 2.25 0.85 - 2 A/W ns Absolute Maximum Ratings 20 Volts 5 mA 1 mA o -40 C to + 85oC -40oC to + 85oC 250oC 829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502 |
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