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| TetraFET DMD5010 DMD5010-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B G (typ) C (2 pls) 2 1 H D 3 P (2 pls) A 5 4 E (4 pls) F I GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W - 50V - 400MHz PUSH-PULL FEATURES N M O J K * SUITABLE FOR BROAD BAND APPLICATIONS * SIMPLE BIAS CIRCUITS D1 PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 15.24 10.80 45 9.78 8.38 27.94 1.52R 10.16 21.84 0.10 1.96 1.02 4.45 34.04 1.63R Tol. 0.50 0.13 5 0.13 0.13 0.13 0.13 0.15 0.23 0.02 0.13 0.13 0.38 0.13 0.13 PIN 2 PIN 4 DRAIN 1 GATE 2 * ULTRA-LOW THERMAL RESISTANCE * BeO FREE Inches 0.600 0.425 45 0.385 0.330 1.100 0.060R 0.400 0.860 0.004 0.077 0.040 0.175 1.340 0.064R Tol. 0.020 0.005 5 0.005 0.005 0.005 0.005 0.006 0.009 0.001 0.005 0.005 0.015 0.005 0.005 * LOW Crss * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage* Drain Current* Storage Temperature Maximum Operating Junction Temperature 648W (389W -A Version) 125V 20V 12A -65 to 150C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 7347 Issue 1 DMD5010 DMD5010-A ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 50V VGS = 20V ID = 10mA VDS = 10V ID = 10mA ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 2A VDS = VGS 1 3.2 125 Typ. Max. Unit V 4 1 7 mA A V mhos 0.1 V VGS(th)match TOTAL DEVICE GPS VSWR Ciss Coss Crss Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance PO = 125W VDS = 50V f = 400MHz IDQ = 1.4A 13 60 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 240 100 6 dB % -- pF pF pF PER SIDE VDS = 50V VDS = 50V Reverse Transfer Capacitance VDS = 50V * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 0.27C / W 0.45 C / W -A Version Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 7347 Issue 1 |
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