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CHA3689
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC Description
The CHA3689 is a three-stage self biased wide band monolithic low noise amplifier.
RFin Vd1 Vd2 Vd3
The circuit is manufactured with a standard P-HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
B D
RFout
Main Features
Broadband performance 12.5-30GHz 2.0dB noise figure 26dB gain (12.5-26GHz) 26dBm output IP3 (18-30GHz) Low DC power consumption Chip size: 2,45 x 1,21 x 0,1 mm
Gain & NF (dB)
Gain and NF @ 120 mA (BD grounded)
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 12 14 16 18 20 22 24 26 28 30
Gain
NF
Frequency (GHz)
On wafer typical measurements
Main Characteristics
Tamb = +25 Vd1=Vd2=Vd3 = +4V C, Symbol
NF G P1dB Noise figure Gain Output power at 1dB gain compression 23 14
Pads B, D = GND (High current configuration) Min Typ
2.0 26 15
Parameter
Max
2.5
Unit
dB dB dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA36897082 - 23 Mar 07 1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3689
12.5-30GHz Low Noise Amplifier
Electrical Characteristics (low current configuration)
These values are representative on wafer measurements that are made without bonding wires at the RF ports.
Tamb = +25 Vd1=Vd2=Vd3= +4V C, Symbol
Fop G G NF
Pads B, D = not connected Min
12.5 23 20 26 22 2.5 2 1.8 2.0 3.0:1 2.0:1 2.5:1 23 13 24 14 90 4 120 2.3 2.5 3.5:1 2.5:1 3.0:1 dBm dBm mA V
Parameter
Operating frequency range Gain (12.5 - 24GHz) Gain (24.5 - 30GHz) Gain flatness (12.5 - 24GHz) Gain flatness (24.5 - 30GHz) Noise figure (12.5 - 24GHz) Noise figure (24.5 - 30GHz)
Typ
Max
30
Unit
GHz dB dB dB dB dB dB
S11
Input return loss (12.5 - 16GHz) (27 - 30GHz) Input return loss (16 - 27GHz)
S22 OIP3 P1dB Id Vd
Output return loss 3rd order intercept point (18 - 30GHz) Output power at 1dB gain compression Drain bias current Drain bias voltage
Electrical Characteristics (high current configuration)
Tamb = +25 Vd1=Vd2=Vd3 = +4V C, Symbol
Fop G G NF
Pads B, D = GND Min
12.5 24 21 27 23 2.5 2 1.9 2.1 3.0:1 2.0:1 2.5:1 25 14 26 15 120 4
2/10
Parameter
Operating frequency range Gain (12.5 - 24GHz) Gain (24.5 - 30GHz) Gain flatness (12.5 - 24GHz) Gain flatness (24.5 - 30GHz) Noise figure (12.5 - 24GHz) Noise figure (24.5 - 30GHz)
Typ
Max
30
Unit
GHz dB dB dB dB
2.4 2.6 3.5:1 2.5:1 3.0:1
dB dB
S11
Input return loss (12.5 - 16GHz) (27 - 30GHz) Input return loss (16 - 27GHz)
S22 OIP3 P1dB Id Vd
Output return loss 3rd order intercept point (18 - 30GHz) Output power at 1dB gain compression Drain bias current Drain bias voltage
dBm dBm 150 mA V
Ref. : DSCHA36897082 - 23 Mar 07
/Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12.5-30GHz Low Noise Amplifier
Absolute Maximum Ratings (1)
Tamb = +25 C Symbol
Vd Pin Top Tj Tstg Drain bias voltage RF input power Operating temperature range Junction temperature Storage temperature range
CHA3689
Parameter
Values
4.5 10 -40 to +85 175 -55 to +125
Unit
V dBm C C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHA36897082 - 23 Mar 07
3/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3689
12.5-30GHz Low Noise Amplifier
Typical Chip on wafer Sij parameters for low current configuration
Tamb = +25 Vd1=Vd2=Vd3= +4V, Id = 90 mA C, Pads B, D = not connected
Freq (GHz)
dB(S11)
P(S11) ( )
dB(S12)
P(S12) ( )
dB(S21)
P (S21) ( )
dB(S22)
P(S22) ( )
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
-0,1 -0,1 -0,2 -0,2 -0,3 -0,5 -1,5 -3,9 -6,7 -6,5 -5,0 -4,5 -5,1 -5,9 -5,9 -8,0 -8,9 -12,8 -15,3 -20,3 -25,7 -26,6 -24,2 -22,4 -18,9 -12,0 -9,2 -7,1 -5,4 -3,5 -2,7 -2,6 -2,6 -2,4 -2,4 -2,3 -2,7 -3,2 -3,6
-23 -35 -48 -64 -81 -106 -141 170 110 53 7 -26 -53 -67 -81 -102 -118 -137 -150 -172 170 105 47 43 57 62 45 27 15 0 -15 -29 -38 -46 -57 -64 -73 -76 -87
-67,3 -61,6 -81,4 -60,5 -63,3 -59,5 -61,4 -55,2 -59,4 -61,7 -51,4 -51,6 -49,3 -61,1 -44,5 -47,5 -47,7 -52,1 -49,2 -59,8 -72,9 -55,4 -54,5 -54,8 -61,9 -47,8 -63,2 -48,4 -49,5 -47,3 -47,6 -45,0 -49,3 -38,8 -45,5 -51,5 -46,1 -56,0 -47,4
-16 -160 132 -176 -15 -2 73 -83 -68 -76 -156 176 -136 -1 67 60 20 7 10 -56 24 71 41 13 -85 177 -179 99 -2 -75 -133 -160 40 98 124 114 -96 142 153
-65,4 -70,6 -56,0 -33,7 -16,5 -1,4 7,4 15,1 19,5 22,2 23,9 25,1 25,8 26,2 27,3 27,7 28,7 28,5 28,4 27,9 26,9 26,2 25,1 24,4 24,1 24,0 23,0 22,2 21,2 19,8 17,9 15,5 12,9 10,7 8,2 6,2 4,1 2,4 1,1
67 -166 10 -32 -89 -160 123 54 -20 -81 -137 173 126 85 49 7 -30 -72 -108 -147 180 147 116 88 60 26 -4 -35 -67 -100 -133 -162 172 149 129 109 92 75 56
-0,2 -0,3 -0,5 -1,3 -3,3 -8,0 -14,9 -19,6 -14,6 -11,6 -12,2 -12,5 -13,1 -15,0 -12,3 -12,3 -9,9 -8,1 -7,8 -7,3 -8,2 -8,8 -9,3 -10,2 -12,2 -10,1 -9,9 -9,6 -9,0 -7,9 -6,7 -6,1 -5,4 -4,9 -4,4 -4,0 -4,0 -4,0 -4,1
-30 -47 -66 -90 -118 -147 -143 -142 -73 -108 -134 -153 -178 155 147 121 101 78 56 36 19 9 1 -8 3 8 -1 -1 -2 -1 -9 -14 -22 -26 -34 -40 -48 -54 -62
Ref. : DSCHA36897082 - 23 Mar 07
4/10
/Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12.5-30GHz Low Noise Amplifier
CHA3689
Typical Chip on wafer Sij parameters for high current configuration
Tamb = +25 Vd1=Vd2=Vd3= +4V, Id = 120 mA C, Pads B, D = GND
Freq (GHz)
dB(S11)
P(S11) ()
dB(S12)
P(S12) ()
dB(S21)
P(S21) ( )
dB(S22)
P(S22) ( )
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
-0,1 -0,1 -0,1 -0,2 -0,3 -0,5 -1,5 -3,8 -6,6 -6,5 -5,0 -4,6 -5,2 -6,7 -6,6 -7,1 -9,1 -12,0 -14,8 -18,5 -23,6 -26,6 -23,6 -21,8 -17,3 -12,9 -10,1 -7,3 -5,6 -4,0 -3,1 -2,8 -2,8 -2,3 -2,5 -2,3 -3,1 -3,3 -3,9
-23 -35 -48 -63 -80 -105 -140 171 112 55 9 -25 -51 -67 -76 -100 -115 -134 -142 -171 150 101 58 48 54 54 42 27 12 1 -14 -27 -37 -46 -55 -65 -75 -77 -85
-62,8 -60,7 -63,5 -72,0 -74,5 -66,5 -57,0 -65,6 -53,8 -53,3 -52,2 -59,8 -49,6 -45,7 -44,7 -48,0 -60,5 -59,0 -61,1 -56,6 -62,0 -57,1 -59,9 -56,2 -56,5 -51,9 -49,9 -49,0 -44,7 -53,1 -53,6 -59,1 -48,0 -47,2 -43,6 -63,3 -45,0 -46,0 -31,5
-51 9 -105 63 -171 137 -133 -97 -100 -131 -152 165 84 147 79 85 63 -25 131 -81 18 174 150 22 -113 139 -2 33 120 29 128 -80 99 -155 141 109 179 101 144
-59,9 -58,1 -54,9 -33,8 -15,8 -0,7 8,1 15,7 20,1 22,7 24,5 25,7 26,4 26,6 27,3 28,4 29,0 29,0 28,8 28,5 27,4 26,8 25,9 25,3 24,9 24,6 23,7 23,0 22,1 20,8 19,1 16,6 14,0 11,6 9,1 6,8 4,5 2,4 0,7
-140 -121 31 -31 -87 -159 124 55 -18 -80 -136 174 127 86 51 11 -27 -68 -104 -142 -176 152 121 93 64 32 1 -30 -61 -95 -129 -159 174 151 130 110 91 75 57
-0,2 -0,3 -0,5 -1,2 -3,2 -8,0 -14,6 -17,5 -13,4 -10,7 -11,4 -11,7 -13,3 -14,6 -13,2 -12,3 -10,2 -8,4 -8,1 -7,5 -8,0 -8,7 -9,3 -10,2 -11,9 -10,8 -10,1 -10,2 -9,4 -8,4 -7,2 -6,2 -5,6 -4,8 -4,3 -4,0 -3,9 -3,9 -3,5
-30 -46 -65 -88 -115 -142 -133 -128 -77 -109 -134 -152 -179 161 148 125 107 78 56 36 18 6 -1 -10 -1 1 -6 -3 -4 -3 -8 -12 -20 -24 -32 -39 -43 -50 -54
Ref. : DSCHA36897082 - 23 Mar 07
5/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3689
Typical Measured Performance
Tamb = +25 Vd1=Vd2=Vd3= +4V C,
12.5-30GHz Low Noise Amplifier
Id = 90 mA / Id = 120 mA for pads B, D = GND
Measurements on wafer (without bonding wires at the RF ports)
35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 10 12 14
Gain and Return Losses @ 90 mA
S21
Gain & Return Losses (dB)
S11
S22
16
18
20
22
24
26
28
30
32
Frequency (GHz)
5 4,5 4 3,5
Noise figure versus frequency @ 90 mA
NF (dB)
3 2,5 2 1,5 1 0,5 0 10 12 14 16 18 20
6/10
22
24
26
28
30
32
Frequency (GHz)
Ref. : DSCHA36897082 - 23 Mar 07 /Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12.5-30GHz Low Noise Amplifier
CHA3689
35 30 25 20
Gain and Return Losses @ 120 mA (BD grounded)
S21
Gain & Return Losses (dB)
15 10 5 0 -5 -10 -15 -20 -25 -30 -35 10 12 14 16 18 20 22 24 26 28 30 32
S11
S22
Frequency (GHz)
5 4,5 4 3,5 3
Noise figure versus frequency @ 120 mA (BD grounded)
NF (dB)
2,5 2 1,5 1 0,5 0 10 12 14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
Ref. : DSCHA36897082 - 23 Mar 07
7/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3689
12.5-30GHz Low Noise Amplifier
35 30 25
Gain and Return Losses @ 120 mA (BD grounded)
Gain & Return Losses (dB)
20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 2 4 6 8 10 12 14 16
S21
S11
S22
18
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
T y p ica l O u tp u t P o w er -1 d B @ 9 0 m A a n d 1 2 0 m A
20 19 18 17 16 15 14 13 12 11 10 9 8 10 12 14 16 18 20 22 24 26 28 30 32
Output Power P-1dB (dBm)
120 mA
90 mA
F req u en cy (G H z)
Ref. : DSCHA36897082 - 23 Mar 07 8/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3689
12.5-30GHz Low Noise Amplifier
Chip Assembly and Mechanical Data
To Vdd DC drain supply feed 10 nF
120 pF
B
D
To ground versus biasing point
Note: Supply feed might be capacitively bypassed. 25m diameter gold wire is to be prefered.
DC Pads Size: 100/100 m, Chip thickness : 100 m
Ref. : DSCHA36897082 - 23 Mar 07 9/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3689
Chip Biasing options
12.5-30GHz Low Noise Amplifier
This chip is self-biased, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way.
Vd1 1.34k 0.4k 42 3k 0.42k
Vd2 3k 5 0.42k
Vd3
3.3
RFin 112 11.6
B
RFout 20 9.9
D
13.4
The requirement is not to exceed Vds = 3.5Volt ( internal Drain to Source voltage ). We propose two standard biasing: * Low Noise and low consumption: Vd = 4V and B, D not connected (NC). Idd = 90mA & Pout-1dB = 14dBm Typical. Vd = 4V and B, D grounded. Idd = 120mA & Pout-1dB = 15dBm Typical.
*
Low Noise and higher output power:
Ordering Information
Chip form : CHA3689-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA36897082 - 23 Mar 07
10/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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