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| 4V Drive Pch MOSFET UM6J1N Structure Silicon P-channel MOSFET Dimensions (Unit : mm) UMT6 2.0 1.3 0.9 0.65 (5) (6) (4) 0.2 0.15 Each lead has same dimensions Abbreviated symbol : J01 Applications Switching Packaging specifications Package Type UM6J1N 2 Inner circuit Taping TN 3000 (6) (5) (4) Code Basic ordering unit (pieces) 1 2 1 (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land Continuous Pulsed Symbol VDSS VGSS ID IDP 1 PD Tch Tstg 2 Limits -30 20 0.2 0.4 150 120 150 -55 to +150 Unit V V A A mW / TOTAL mW / ELEMENT C C Thermal resistance Parameter Channel to ambient Each terminal mounted on a recommended land Symbol Rth(ch-a) Limits 833 1042 Unit C/W / TOTAL C/W / ELEMENT www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 0.1Min. Features 1) Two RSU002P03 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 0.65 0.7 1pin mark (1) (2) (3) 1.25 2.1 1/3 2009.04 - Rev.A UM6J1N Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -30 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -1.0 - Static drain-source on-state RDS (on) - resistance - Yfs 0.2 Forward transfer admittance Ciss - Input capacitance Coss - Output capacitance - Crss Reverse transfer capacitance - td (on) Turn-on delay time tr - Rise time td (off) - Turn-off delay time tf - Fall time Pulsed Data Sheet Typ. - - - - 0.9 1.4 1.6 - 30 4 5 8 5 30 40 Max. 10 - -1 -2.5 1.4 2.1 2.4 - - - - - - - - Unit A V A V S pF pF pF ns ns ns ns Conditions VGS=20V, VDS=0V ID= -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, ID= -1mA ID= -0.2A, VGS= -10V ID= -0.15A, VGS= -4.5V ID= -0.15A, VGS= -4V VDS= -10V, ID= -0.15A VDS= -10V VGS=0V f=1MHz VDD -15V ID= -0.15A VGS= -10V RL 100 RG=10 Body diode characteristics (source-drain) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -0.1A, VGS=0V Electrical characteristic curves 100 GATE-SOURCE VOLTAGE : -VGS (V) Ta=25C f=1MHz VGS=0V 1000 8 Ta=25C VDD= -15V VGS= -10V RG=10 Pulsed SWITCHING TIME : t (ns) CAPACITANCE : C (pF) tf Ta=25C VDD= -15V ID=-200mA RG=10 6 Pulsed 7 Ciss 100 td(off) 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 10 10 td(on) Crss Coss tr 1 0.01 0.1 1 10 100 1 0.01 0.1 1 DRAIN-SOURCE VOLTAGE : -VDS (V) DRAIN CURRENT : -ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 1 Ta=125C 0.1 75C 25C -25C 15 ID= -125mA ID= -200mA REVERSE DRAIN CURRENT : -IS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS () VDS= -10V Pulsed 20 Ta=25C Pulsed 1 VGS=0V Pulsed DRAIN CURRENT : -ID (A) Ta=125C 75C 10 0.1 25C -25C 0.01 5 0.001 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 GATE-SOURCE VOLTAGE : -VGS (V) GATE-SOURCE VOLTAGE : -VGS (V) SOURCE-DRAIN VOLTAGE : -VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Reverse Drain Current vs. Source-Drain Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.04 - Rev.A UM6J1N 10 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () Ta=125C 75C 25C -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () VGS= -10V Pulsed Ta=125C 75C 25C -25C 10 VGS= -4.5V Pulsed 10 Ta=125C 75C 25C -25C VGS= -4V Pulsed 1 1 1 0.1 0.01 0.1 1 0.1 0.01 0.1 1 0.1 0.01 0.1 1 DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( ) 10 Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () Ta=25C Pulsed VGS= -4V VGS= -4.5V VGS= -10V 1 0 0.01 0.1 1 DRAIN CURRENT : -ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( ) Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
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