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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD725 DESCRIPTION *With TO-3 package *High voltage ,high speed *Low collector saturation voltage APPLICATIONS *For high voltage,power switching and TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 7 50 150 -65~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD725 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A 5.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1 A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 A IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 36 hFE-2 DC current gain IC=5A ; VCE=5V 5 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD725 Fig.2 Outline dimensions 3 |
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