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FCA16N60N N-Channel MOSFET
August 2009
TM SupreMOS
FCA16N60N
N-Channel MOSFET
600V, 16A, 0.170 Features
* RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A * Ultra low gate charge ( Typ. Qg = 40.2nC) * Low effective output capacitance * 100% avalanche tested * RoHS compliant
Description
The SupreMOS MOSFET, Fairchild's next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
G
G DS
TO-3PN FCA Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) FCA16N60N 600 30 16.0 10.1 48.0 355 5.3 1.34 100 20 134.4 1.08 -55 to +150 300 Units V V A A mJ A mJ V/ns V/ns W W/oC
oC o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient FCA16N60N 0.93 0.24 40
oC/W
Units
(c)2009 Fairchild Semiconductor Corporation FCA16N60N Rev. A1
1
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FCA16N60N N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FCA16N60N Device FCA16N60N Package TO-3PN Reel Size Tape Width Quantity 30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to VDS = 480V, VGS = 0V VDS = 480V, VGS = 0V, TC = 125oC VGS = 30V, VDS = 0V 25oC 600 0.73 10 100 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 8A VDS = 40V, ID = 8A 2.0 0.170 20 4.0 0.199 V S
Dynamic Characteristics
Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Equivalent Series Resistance (G-S) VDS = 380V, ID = 8A, VGS = 10V
(Note 4)
VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 480V, VGS = 0V
-
1630 70 5 40 176 40.2 6.7 12.9 2.9
2170 95 10 60 52.3 -
pF pF pF pF pF nC nC nC
Drain Open
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 8A RG = 4.7
(Note 4)
-
15.8 15.5 60.3 20.2
41.6 41.0 130.6 50.4
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 8A VGS = 0V, ISD = 8A dIF/dt = 100A/s 319 4.4 16 48 1.2 A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 5.3A, RG = 25, Starting TJ = 25C 3. ISD 16A, di/dt 200A/s, VDD = 380V, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics
FCA16N60N Rev. A1
2
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FCA16N60N N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V
Figure 2. Transfer Characteristics
100
ID, Drain Current[A]
ID, Drain Current[A]
10
10
150 C
o
25 C -55 C
o
o
1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
1
*Notes: 1. VDS = 20V 2. 250s Pulse Test
0.1 0.1
0.1
1 VDS, Drain-Source Voltage[V] 10 20
2
4 6 VGS, Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.6
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
0.5
0.4
VGS = 10V
150 C
o
10
25 C
o
0.3
VGS = 20V
0.2
*Notes: TC = 25 C
o
*Notes: 1. VGS = 0V
0.1 0 10
20 30 ID, Drain Current [A]
40
50
1 0.2
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V]
1.6
Figure 5. Capacitance Characteristics
10000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 120V VDS = 380V VDS = 480V
8
7500 Capacitances [pF]
Coss *Notes: 1. VGS = 0V 2. f = 1MHz
6
5000
4
2500
Ciss
2
*Notes: ID = 8A
Crss
0 0.1
0
1 10 100 VDS, Drain-Source Voltage [V]
600
0
10 20 30 40 Qg, Total Gate Charge [nC]
50
FCA16N60N Rev. A1
3
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FCA16N60N N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 8A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 1mA
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
100
Figure 10. Maximum Drain Current vs. Case Temperature
20
20s 100s DC 10ms
ID, Drain Current [A]
ID, Drain Current [A]
10
1ms
15
1
Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
0.1
5
0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
2 1
Thermal Response [Z JC]
0.5
0.2
PDM t1 t2
0.1
0.1 0.05 0.02 0.01
*Notes: 1. ZJC(t) = 0.93 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
0.01
Single pulse
0.005 -5 10
10
-4
10 10 Rectangular Pulse Duration [sec]
-3
-2
10
-1
1
FCA16N60N Rev. A1
4
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FCA16N60N N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA16N60N Rev. A1
5
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FCA16N60N N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as D U T
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * IS D c o n t r o lle d b y p u ls e p e r io d
VGS ( D r iv e r )
G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v /d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FCA16N60N Rev. A1
6
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FCA16N60N N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FCA16N60N Rev. A1
7
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Rev. I41
(c) 2008 Fairchild Semiconductor Corporation
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