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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4864 DESCRIPTION *With TO-66 package *Continuous collector current-IC=2A *High VCEO:120V (Min) APPLICATIONS *For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 120 7 2 16 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case MAX 7.0 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) VBE(on) ICEX ICEO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=0.1 A ; IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A IC=0.5A ; VCE=5V VCE=140V;VBE(off)=1.5V TC=150 VCE=120V; IB=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V 50 10 50 50 MIN 120 TYP. 2N4864 MAX UNIT V 1.5 2.0 1.5 2.0 5.0 10 1.0 150 V V V mA mA mA pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N4864 Fig.2 Outline dimensions 3 |
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