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| DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25C Derate 4.4W/C above 25C Tc = 25C VDSS ID25 Maximum Ratings 500 500 20 30 4.5 27 4.5 3.5 >200 200 80 3.5 0.74 1.50 Characteristic Values TJ = 25C unless otherwise specified = = = 500 V 4.5 A 1.5 200W Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 RDS(on) PDC V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 GATE DRAIN SG2 SD1 SD2 Features min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm (0.063 in) from case for 10 s VGS = 0 V, ID = 3 ma VDS = VGS, ID = 250 a VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 60 V, ID = 0.5ID25, pulse test typ. max. V 500 2.5 3.4 4 100 25 250 1.2 1.9 -55 175 -55 300 2 +175 +175 1.5 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials V nA A A S C C C C g Advantages * Optimized for RF and high speed switching at frequencies to >100MHz * Easy to mount--no insulators needed * High power density DE150-501N04A RF Power MOSFET Symbol Test Conditions Characteristic Values min. typ. max. 5 570 VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz (TJ = 25C unless otherwise specified) RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 , Ig = 3 ma VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin pF pF pF pF ns ns ns ns nC nC nC 75 3 16 4 4 4 4 14 3.5 5.5 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 4.5 27 1.4 900 A A V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the "Device Installation & Mounting Instructions" technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,860,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715 DE150-501N04A RF Power MOSFET Fig. 1 Typical Transfer Characteristics V DS = 60V, PW = 20 S Fig. 2 Typical Output Characteristics 18 16 Top 18 16 ID, Drain Current (A) ID, Drain Currnet (A) 14 12 10 8 6 4 2 0 4 5 6 7 8 9 10 14 12 10 8 6 4 2 0 0 10V 9V 8V 7.5V 7V 6.5V 6V 5.5V Bottom 5V 10 20 30 40 50 60 VGS, Gate-to Source Voltage (V) VDS, Drain-to-Source Voltage Fig. 3 Fig. 4 Gate Charge vs. Gate-to-Source Voltage V DS = 250V, ID = 2.25A 1000 14 V D S Voltage vs. Capacitance Ciss Coss G ate-to-Source Voltage (V) Capacitance (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 100 10 Crss 1 0 50 100 150 200 250 300 350 400 Gate Charge (nC) VDS Voltage (V) DE150-501N04A RF Power MOSFET Fig. 5 Package drawing Source Source Gate Drain Source Source DE150-501N04A RF Power MOSFET 501N04A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 6. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 6 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/DE150-501N04A.html Net List: *SYM=POWMOSN .SUBCKT 501N04A 10 20 30 * TERMINALS: D G S * 500 Volt 4.5 Amp 1.5 Ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 9.5 DON 6 2 D1 ROF 5 7 3.5 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 .6N RD 4 1 1.5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=6.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=175P BV=500 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=250P BV=500 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0240 Rev 5 (c) 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com |
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