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APTGF90H60T3G
Full - Bridge NPT IGBT Power Module
13 14
VCES = 600V IC = 90A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS compliant Max ratings 600 120 90 315 20 416 200A@500V Unit V
April, 2009 1-7 APTGF90H60T3G - Rev 1
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF90H60T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6 400 Typ 4400 645 401 331 40 200 40 9 120 15 42 10 130 22 1 mJ 2 450 A Max Unit A V V nA Unit pF
1.7 4
2.0 2.2
Dynamic Characteristics
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =100A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 100A RG = 1.2 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 100A RG = 1.2 VGE = 15V Tj = 125C VBus = 400V IC = 100A Tj = 125C RG = 1.2 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Test Conditions Tj = 25C Tj = 125C Tc = 90C IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =400A/s 60 1.8 2.2 1.5 25 160 70 960 Min 600 VR=600V 35 600 2.2
April, 2009 2-7 APTGF90H60T3G - Rev 1
Min
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Typ
Max
Unit V A A V ns nC
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Tj = 150C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
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APTGF90H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 exp B25 / 85 T - T 25
T: Thermistor temperature 1 RT: Thermistor value at T
Min
Typ 50 5 3952 4
Max
Unit k % K %
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.3 0.65 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGF90H60T3G - Rev 1
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28
APTGF90H60T3G
Typical IGBT Performance Curve
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 200 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle 250s Pulse Test < 0.5% Duty cycle
200 Ic, Collector Current (A)
150
TJ=25C TJ=125C
150
TJ=25C
100
100
TJ=125C
50
50
0 0 1 2 3 4
VCE, Collector to Emitter Voltage (V) Transfer Characteristics 200 VGE, Gate to Emitter Voltage (V)
0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 100A TJ = 25C VCE=120V VCE=300V VCE=480V
4
18
250s Pulse Test < 0.5% Duty cycle
Ic, Collector Current (A)
16 14 12 10 8 6 4 2 0 0
150
100
50
TJ=125C TJ=25C
0 0 1 2 3 4 5 6 7 8 VGE, Gate to Emitter Voltage (V) 9
50
100 150 200 250 300 350 400 Gate Charge (nC)
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
140 120 100 80 60 40 20 0 25 50 75 100 125 150
TC, Case Temperature (C)
1.10
1.00
0.90
0.80 25 50 75 100 125 TJ, Junction Temperature (C)
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APTGF90H60T3G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 60
VGE = 15V
Turn-Off Delay Time vs Collector Current 175 150 125 100 75 50 0 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 1.2 VCE = 400V RG = 1.2 VGE=15V, TJ=125C
50
40
Tj = 125C VCE = 400V RG = 1.2
30
VGE=15V, TJ=25C
20 0 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 60 50
VCE = 400V RG = 1.2
60 50
tf, Fall Time (ns)
tr, Rise Time (ns)
40 30 20 10 0 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 300
VGE=15V, TJ=125C
40 30 20 10 0 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 300
TJ = 125C
TJ = 25C
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ)
4
Eon, Turn-On Energy Loss (mJ)
5 4 3 2 1 0
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 1.2
3 2 1 0 0
VCE = 400V RG = 1.2
TJ=125C, VGE=15V
TJ = 125C
50
100
150
200
250
300
0
50
100
150
200
250
300
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 6 Switching Energy Losses (mJ) IC, Collector Current (A) 5 4 3
Eoff, 100A
ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 250
VCE = 400V VGE = 15V TJ= 125C
Eon, 100A
200 150 100 50 0
2 1
Eon, 100A
0
2
4 6 8 10 Gate Resistance (Ohms)
12
0
200
400
600
VCE, Collector to Emitter Voltage (V)
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APTGF90H60T3G - Rev 1
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April, 2009
APTGF90H60T3G
Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000
Cies
Operating Frequency vs Collector Current
240 200 160 120 80 40 0 0 40 80 120 160 200
IC, Collector Current (A)
hard switching ZCS ZVS VCE = 400V D = 50% RG = 1.2 TJ = 125C TC= 75C
C, Capacitance (pF)
1000
Coes
Cres
100 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9 0.7
0.1 0.05 0 0.00001
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APTGF90H60T3G - Rev 1
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APTGF90H60T3G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.3
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 240 IF, Forward Current (A) 200 160 120 80 40 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge
TJ=125C VR=400V TJ=25C TJ=125C
175
trr, Reverse Recovery Time (ns)
Trr vs. Current Rate of Charge
TJ=125C VR=400V
150 125 100 75 50 0 400 800
120 A 60 A 30 A
1200 1600 2000 2400
-diF/dt (A/s) IRRM vs. Current Rate of Charge
TJ=125C VR=400V 120 A
QRR, Reverse Recovery Charge (C)
120 A
IRRM, Reverse Recovery Current (A)
3
50 40 30 20 10 0 0
60 A
2
60 A 30 A
30 A
1
0 0 400 800 1200 1600 2000 2400 -diF/dt (A/s)
400
800
1200 1600 2000 2400
-diF/dt (A/s)
Capacitance vs. Reverse Voltage 400 C, Capacitance (pF) 300
Max. Average Forward Current vs. Case Temp. 100 80 IF(AV) (A) 60 40 20
Duty Cycle = 0.5 TJ=175C
200 100 0 1 10 100 1000 VR, Reverse Voltage (V)
25
50
75
100
125
150
175
Case Temperature (C)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF90H60T3G - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
April, 2009
0

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