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ECO-PACTM 2 IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet AC 1 X15 NTC X16 L9 F1 AC 1 IK 10 PSIG 100/12 PSIS 100/12* PSSI 100/12* IC25 = 138 A VCES = 1200 V VCE(sat)typ. = 2.8 V LMN S A IJK L9 T16 X15 NTC IK 10 PSIG 100/12 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C Conditions TVJ = 25C to 150C X16 PSIS 100/12* PSSI 100/12* *NTC optional Maximum Ratings 1200 20 138 94 150 VCES 10 568 V V A A A s W Features * * * * * * * * * * * * * VGE = 15 V; RG = 15 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 15 ; TVJ = 125C non-repetitive TC = 25C Conditions Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688 Applications AC and DC motor control AC servo and robot drives power supplies welding inverters Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.8 3.2 4.5 3.4 6.5 5 16 320 100 50 650 50 12.1 10.5 5.5 0.44 V V V mA mA nA ns ns ns ns mJ mJ nF 0.22 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 125 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 3 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 75 A VGE = 15/0 V; RG = 15 VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSIS PSSI 100/12 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 75 A; TVJ = 25C TVJ = 125C IF = 75 A; diF/dt = 750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Maximum Ratings 154 97 A A Package style and outline Dimensions in mm (1mm = 0.0394") PSIG Characteristic Values min. typ. max. 2.2 1.6 79 220 0.9 2.5 V V A ns 0.45 K/W K/W Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K PSSI Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g PSIS 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSIS PSSI 100/12 175 A 150 IC 125 TJ = 25C VGE=17V 15V 13V 11V 175 A 150 IC 125 100 75 TJ = 125C VGE=17V 15V 13V 11V 100 75 50 25 0 0,0 9V 50 25 9V 121T120 0 121T120 0,5 1,0 1,5 2,0 2,5 VCE 3,0 V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 150 125 A IC VCE = 20V TJ = 25C 300 A 250 IF 200 150 100 50 121T120 TJ = 125C TJ = 25C 100 75 50 25 0 0 121T120 5 6 7 8 9 10 VGE 11 V 0,5 1,0 1,5 2,0 2,5 VF 3,0 V 3,5 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 120 20 V VGE 15 VCE = 600V IC = 75A 300 ns trr A IRM trr 80 200 10 40 5 IRM TJ = 125C VR = 600V IF = 75A 100 0 121T120 0 121T120 0 100 200 300 QG 400 nC 0 200 400 600 800 A/s -di/dt 1000 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSIS PSSI 100/12 40 mJ Eon Eon td(on) tr 160 ns 120 t 20 mJ Eoff 15 Eoff td(off) 800 ns 600 t 400 30 20 80 10 VCE = 600V VGE = 15V 10 VCE = 600V VGE = 15V 40 RG = 15 TJ = 125C 121T120 5 RG = 15 200 TJ = 125C 121T120 0 0 50 100 IC 150 A 0 0 tf 0 50 100 IC 150 A 0 Fig. 7 Typ. turn on energy and switching times versus collector current 25 mJ 200 ns 160 t 120 tr 80 40 0 48 56 121T120 Fig. 8 Typ. turn off energy and switching times versus collector current 25 mJ Eoff 2000 td(off) ns 1600 t Eoff 1200 800 400 121T120 20 Eon VCE = 600V VGE = 15V IC = 75A TJ = 125C td(on) Eon 20 15 10 5 0 VCE = 600V VGE = 15V IC = 75A TJ = 125C 15 10 5 0 0 8 16 24 32 40 RG 0 8 16 24 32 RG 40 0 48 56 tf Fig. 9 Typ. turn on energy and switching times versus gate resistor 1 K/W 0,1 ZthJC 0,01 RG = 15 TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 200 A 160 ICM 120 80 40 0 121T120 diode IGBT 0,001 0,0001 single pulse VID...125-12P1 0 200 400 600 800 1000 1200 V VCE 0,00001 0,00001 0,0001 0,001 0,01 t 0,1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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