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Ordering number : ENA1020
2SK4182
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4182
Features
* * * *
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. For use of lighting.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single pulse) *2 Avalanche Current *3 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C (SANYO's ideal heat dissipation condition*1) Conditions Ratings 525 30 9.0 36 80 150 --55 to +150 49 9 Unit V V A A W C C mJ A
*1 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=99V, L=1mH, IAV=9A *3 L1mH, single pulse Marking: K4182
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10908QB TI IM TC-00001085 No. A1020-1/4
2SK4182
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=420V, VGS=0V VGS=30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4.5A ID=4.5A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=9A VDS=200V, VGS=10V, ID=9A VDS=200V, VGS=10V, ID=9A IS=9A, VGS=0V Ratings min 525 100 100 3 2.4 4.8 0.58 750 148 34 22 76 88 40 29.7 6.7 16.8 0.9 1.2 0.75 5 typ max Unit V
A
nA V S pF pF pF ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7002-001
8.2 7.8 6.2 3
8.4 10.0
0.4 0.2
0.6
4.2
1.2
1.0 2.54
1
2
1.0 2.54
6.2 5.2
0.3 0.6 7.8
5.08 10.0 6.0
2.5
0.7
1 : Gate 2 : Source 3 : Drain SANYO : ZP
Switching Time Test Circuit
Avalanche Resistance Test Circuit
VIN 10V 0V VIN
VDD=200V
L 50 RG
ID=4.5A RL=44
D
PW=10s D.C.0.5%
VOUT
2SK4182
G
10V 0V
50
VDD
2SK4182 P.G RGS=50
S
No. A1020-2/4
2SK4182
30
ID -- VDS
Tc=25C
25
ID -- VGS
VDS=20V
25
Drain Current, ID -- A
20
8V
Drain Current, ID -- A
10V
15V
20
Tc= --25C
25C
15
75C
15
10
10
6V
5
5
VGS=5V
0 0 5 10 15 20 25 30 IT13171 1.8 0 2 3 4 5 6 7 8 9 10 11 12
Drain-to-Source Voltage, VDS -- V
2.4 2.2
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT13172
RDS(on) -- Tc
ID=4.5A
1.6
Static Drain-to-Source On-State Resistance, RDS(on) --
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5 6 7 8 9 10 IT13173
Static Drain-to-Source On-State Resistance, RDS(on) --
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --50
Tc=75C 25C --25C
=1 S VG
=4 ID V, 0
.5A
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
2
Case Temperature, Tc -- C
3 2 10 7 5
IT13174
yfs -- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
VDS=20V
10
Source Current, IS -- A
7 5 3 2
C 25
= Tc 5C --2
3 2 1.0 7 5 3 2
C 75
Tc=7 5C
7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
0.1 7 5 3 2 0.01 2.00E-01
4.00E-01
6.00E-01
Drain Current, ID -- A
1000 7
IT13175 5 3 2
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
--25C
8.00E-01 1.00E+00 1.20E+00 1.40E+00 IT13176
Switching Time, SW Time -- ns
5 3 2
VDD=200V VGS=10V Ciss, Coss, Crss -- pF
25C
1.0
1000 7 5 3 2 100 7 5 3 2
Ciss
td (off)
100 7 5 3 2
Coss
tr
tf
td(on)
Crss
10 0.1
10 2 3 5 7 1.0 2 3 5 7 10 2 3 0 10 20 30 40 50 IT13178
Drain Current, ID -- A
IT13177
Drain-to-Source Voltage, VDS -- V
No. A1020-3/4
2SK4182
10 9
VGS -- Qg
VDS=200V ID=9A
Gate-to-Source Voltage, VGS -- V
7 5 3 2
ASO
IDP=36A
ID=9A
1m
PW10s
8 7 6 5 4 3 2 1 0 0 10 20 30 IT13179
Drain Current, ID -- A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
s 10 0 10 ms s 0m DC s op era tio n
s
10
10
Operation in this area is limited by RDS(on). Tc=25C Single pulse
23 5 7 1.0 23 5 7 10 23 5 7 100 23 57
0.01 0.1
Total Gate Charge, Qg -- nC
90
PD -- Tc
Avalanche Energy Derating Factor -- %
Drain-to-Source Voltage, VDS -- V
120
IT13180
EAS -- Ta
Allowable Power Dissipation, PD -- W
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
100
80
60
40
20
0 0 25 50 75 100 125 150 175 IT10478
Case Tamperature, Tc -- C
IT13181
Ambient Temperature, Ta -- C
Note on usage : Since the 2SK4182 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of January, 2008. Specifications and information herein are subject to change without notice.
PS No. A1020-4/4

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