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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 *DC Current Gain: hFE= 10-75@IC= 2.5A APPLICATIONS *Designed for high voltage inverters, switching regulators and line operated amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2N6497 VCBO Collector-Base Voltage 2N6498 2N6499 VALUE 350 400 UNIT VCEO Collector-Emitter Voltage VEBO IC ICM IB PD Tj Tstg Emitter-Base Voltage w w 2N6497 2N6498 2N6499 scs .i w 450 250 300 350 6 5 10 2 80 150 -65~150 V .cn mi e V V A A A W Collector Current-Continuous Collector Current-Peak Base Current Total Power Dissipation@TC=25 Junction Temperature Storage Temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Rresistance,Junction to Case MAX 1.56 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2N6497 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N6498 2N6499 2N6497 VCE(sat)-1 Collector-Emitter Saturation Voltage 2N6498 2N6499 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A IC= 25mA; IB= 0 CONDITIONS 2N6497/6498/6499 MIN 250 300 350 MAX UNIT V 1.0 1.25 1.5 IC= 5A; IB= 2A 5.0 1.5 2.5 1.0 10 1.0 10 1.0 10 1.0 10 3 5 MHz 75 mA mA V V V V ICEX Collector Cutoff Current IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain w w 2N6497 2N6498 2N6499 .cn mi cse .is w IC= 2.5A; IB= 0.5A IC= 5A; IB= 2A VCE= 350V;VBE(off)= 1.5V VCE= 175V;VBE(off)= 1.5V ;TC=100 VCE= 400V;VBE(off)= 1.5V VCE= 200V;VBE(off)= 1.5V ;TC=100 VCE= 450V;VBE(off)= 1.5V VCE= 225V;VBE(off)= 1.5V ;TC=100 VEB= 6V; IC= 0 IC= 2.5A ; VCE= 10V IC= 5A ; VCE= 10V IC= 0.25A;VCE= 10V;ftest=1.0MHz Current-Gain--Bandwidth Product Switching Times;Duty Cycle2% tr tS tf Rise Time Storage Time Fall Time VCC= 125V,tp= 0.1ms IC=2.5A;IB1= -IB2=0.5 A 1.0 2.5 1.0 s s s isc Websitewww.iscsemi.cn |
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