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| DG469/470 Vishay Siliconix High Voltage, Single and Dual Supply SPDT Analog Switch with Enable Pin DESCRIPTION The DG469/470 are high voltage SPDT switches, with a typical on resistance of 3.6 and typical flatness of 0.4 . The DG469 and DG470 are identical, except the DG470 provides an enable input. When the enable input is activated, both sides of the switch are in a high impedance mode (Off), maintaining a "Safe State" at power up. This function can also be used as a quick "disconnect" in the event of a fault condition. For audio switching, the enable pin provides a mute function. These are high voltage switches that are fully specified with dual supplies at 4.5 V and 15 V and a single supply of 12 V over an operating temperature range from - 40 C to + 125 C. Fast switching speeds coupled with high signal bandwidth makes these parts suitable for video switching applications. All digital inputs have 0.8 V and 2.4 V logic thresholds ensuring low voltage TTL/CMOS compatibility. Each switch conducts equally well in both directions when on and can handle an input signal range that extends to the supply voltage rails. They exhibit breakbefore-make switching action to prevent momentary shorting when switching between channels. The DG469 and DG470 are offered in a MSOP 8 and SOIC 8 package. FEATURES * Low on resistance (3.6 typical) * * * * On resistance flatness (0.4 typical) 44 V supply maximum rating RoHS COMPLIANT 15 V analog signal range Fully specified at supply voltages of 4.5 V, 12 V and 15 V * TTL/CMOS compatible * Break before make switching guaranteed * Total harmonic distortion 0.0145 % APPLICATIONS * * * * * * * * * * * Audio and video signal switching Precision automatic test equipment Precision data acquisition Relay replacement Communications systems Automotive applications Sample and hold systems Power routing applications Telecom signal switching Medical equipment Portable and battery power systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG469 MSOP 8 and SOIC 8 COM NC GND V+ 1 2 3 4 TOP VIEW 8 7 6 5 NO VIN NC DG470 MSOP 8 and SOIC 8 COM NC GND V+ 1 2 3 4 TOP VIEW 8 NO 7 V6 IN 5 EN TRUTH TABLE: DG469 Logic 0 1 NC ON OFF NO OFF ON TRUTH TABLE: DG470 ENABLE 0 0 1 Logic 0 1 X NC ON OFF OFF NO OFF ON OFF Document Number: 71470 S-72541-Rev. C, 17-Dec-07 www.vishay.com 1 DG469/470 Vishay Siliconix ORDERING INFORMATION Temp Range DG469/470 8-Pin MSOP - 40 C to 125 Ca 8-Pin Narrow SOIC Notes: a. - 40 C to 85 C datasheet limits apply. DG469EQ-T1-E3 DG470EQ-T1-E3 DG469EY-T1-E3 DG470EY-T1-E3 Package Part Number ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter V+ to VGND to VDigital Inputsa , VS, VD Limit 44 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 120 30 200 - 65 to 150 8-Pin MSOPc 8-Pin Narrow SOICd 320 400 C mW mA V Unit Continuous Current (NO, NC, or COM) Current (Any terminal except NO, NC, or COM) Peak Current, (Pulsed 1 ms, 10 % Duty Cycle) Storage Temperature Power Dissipation (Package)b Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/C above 70 C. d. Derate 5.0 mW/C above 70 C. SPECIFICATIONS FOR DUAL SUPPLIES Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VIN = 2.4 V, 0.8 Va - 40 to 125 C - 40 to 85 C Parameter Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match On-Resistance Flatness Switch Off Leakage Current Channel On Leakage Current Digital Control Input Current, VIN Low Input Current, VIN High Input Capacitancee Symbol VANALOG rON rON rFLATNESS IS(off) Tempb Full Typc Mind - 15 Maxd 15 6 8 0.4 0.9 0.5 0.9 Mind - 15 Maxd 15 6 7 0.4 0.5 0.5 0.8 Unit V IS = 50 mA, VD = - 10 V to + 10 V IS = 50 mA, VD = 10 V IS = 50 mA, VD = - 5 V, 0 V, + 5 V Room Full Room Full Room Full Room Full Room Full Room Full Full Full Room 3.6 0.12 0.4 0.1 0.1 0.2 - 0.5 - 20 - 0.5 - 20 - 0.5 - 20 -1 -1 VD = 14 V, VS = 14 V ID(off) ID(on) VS = VD = 14 V 0.5 20 0.5 20 0.5 20 1 1 - 0.5 - 2.5 - 0.5 - 2.5 - 0.5 -5 -1 -1 0.5 2.5 0.5 2.5 0.5 5 1 1 nA IIL IIH CIN VIN Under Test = 0.8 V VIN Under Test = 2.4 V f = 1 MHz 0.05 0.05 3.7 A pF www.vishay.com 2 Document Number: 71470 S-72541-Rev. C, 17-Dec-07 DG469/470 Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VIN = 2.4 V, 0.8 Va - 40 to 125 C - 40 to 85 C Parameter Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee e Symbol Tempb Room Full Room Full Room Room Room Room Room Typc 129 80 Mind Maxd 166 200 108 135 Mind Maxd 166 185 108 120 Unit tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) RL = 300 , CL = 35 pF VS = 10 V VS = 10 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 , CL = 1 nF RL = 50 , CL = 5 pF f = 1 MHz ns 15 58 - 57 - 63 37 85 125 3.0 - 0.4 - 3.0 - 0.5 - 4.5 -6 -7 6 7 - 0.5 - 4.5 -6 -7 6 7 A pF dB pC f = 1 MHz Room Room Room Full Channel On Capacitance Power Supplies Power Supply Current Negative Supply Current Ground Current I+ IIGND V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Room Full Room Full SPECIFICATIONS FOR DUAL SUPPLIES Test Conditions Unless Specified V+ = 4.5 V, V- = - 4.5 V VIN = 2.4 V, 0.8 Va - 45 to 125 C - 40 to 85 C Parameter Analog Switch Analog Signal Rangee On-Resistancee On-Resistance Matche Dynamic Characteristics Turn-On Timee Turn-Off Timee Break-Before-Makee Time Delay Charge Injectione Power Supplies Power Supply Currente Negative Supply Currente Ground Currente Symbol VANALOG rON rON Tempb Full Typc Mind - 4.5 Maxd 4.5 11 16 0.7 0.9 265 340 163 200 Mind - 4.5 Maxd 4.5 11 15 0.7 0.8 65 310 163 185 Unit V IS = 50 mA, VD = - 2 V to + 2 V IS = 50 mA, VD = 2 V Room Full Room Full Room Full Room Full Room Full Full Room Full 8 0.6 tON tOFF tD Q RL = 300 , CL = 35 pF VS = 2 V VS = 2 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 , CL = 1 nF 245 145 15 58 3.0 - 0.4 3.0 - 0.5 - 4.5 -6 -7 ns pC 6 7 - 0.5 - 4.5 -6 -7 6 7 A I+ IIGND VIN = 0 or 4.5 V Room Full Room Full Document Number: 71470 S-72541-Rev. C, 17-Dec-07 www.vishay.com 3 DG469/470 Vishay Siliconix SPECIFICATIONS FOR UNIPOLAR SUPPLIES Test Conditions Unless Specified V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 Va - 40 to 125 C - 40 to 85 C Parameter Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match On-Resistance Flatness Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Power Supplies Power Supply Current Negative Supply Current Ground Current Symbol VANALOG rON rON rFLATNESS Tempb Full Typc Mind Maxd 12 Mind Maxd 12 8.5 11.3 0.45 0.5 2.6 2.8 200 240 110 120 Unit V IS = 25 mA, VD = 0 V to + 10 V IS = 25 mA, VD = + 10 V IS = 25 mA, VD = 0 V, + 5 V, + 10 V Room Full Room Full Room Full Room Full Room Full Room Room Room Full 7.5 0.4 2.5 8.5 14 0.45 0.9 2.6 2.9 200 255 110 135 tON tOFF tD Q RL = 300 , CL = 35 pF VS = 10 V VS = 10 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 , CL = 1 nF 190 100 50 2.4 3.0 - 0.4 - 3.0 - 0.5 - 4.5 -6 -7 ns pC 6 7 - 0.5 - 4.5 -6 -7 6 7 A I+ IIGND VIN = 0 or 5 V Room Full Room Full Notes: a. VIN = input voltage to perform proper function. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 71470 S-72541-Rev. C, 17-Dec-07 DG469/470 Vishay Siliconix TYPICAL CHARACTERISTICS 12 TA = 25 C IS = 50 mA 10 rON - On-Resistance () rON - On-Resistance () 4.5 +/-4.5 V 8 10.0 V 10.0 V 12.0 V 13.5 V 15.0 V 20.0 V 14 13 12 11 10 9 8 7 6 + 36.0 V 5 4 3 2 - 20 2 - 15 - 10 -5 0 5 10 15 20 0 4 8 12 16 20 24 28 32 36 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) + 12.0 V + 7.0 V + 9.0 V + 10.8 V TA = 25 C IS = 25 mA + 20.0 V + 24.0 V 6 4 On-Resistance vs. VD and Dual Supply Voltage 8 7 6 + 125 C 5 4 3 2 1 0 - 15 + 85 C + 25 C - 40 C - 55 C V+ = + 15 V V- = - 15 V IS = 50 mA 5 10 15 On-Resistance vs. VD and Single Supply Voltage 12 10 + 125 C rON - On-Resistance () + 85 C rON - On-Resistance () 8 6 + 25 C - 40 C 4 - 55 C V+ = + 12 V V- = 0 V IS = 25 mA 0 2 4 6 8 10 12 2 0 - 10 -5 0 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) On-Resistance vs. VD and Temperature 100000 V+ = + 15 V V- = - 15 V 10000 Leakage Current (pA) ID (on) Leakage Current (pA) 10000 100000 On-Resistance vs. VD and Temperature V+ = + 12 V V- = - 12 V ID (on) 1000 ID (off) 1000 ID (off) 100 IS (off) 100 IS (off) 10 - 60 - 40 - 20 0 20 40 60 80 100 120 140 10 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (C) Temperature (C) Leakage Current vs. Temperature Leakage Current vs. Temperature Document Number: 71470 S-72541-Rev. C, 17-Dec-07 www.vishay.com 5 DG469/470 Vishay Siliconix TYPICAL CHARACTERISTICS 200 CL = 1 nF 150 250 Q - Charge Injection (pC) 100 50 tON/tOFF (s) 0 - 50 - 100 - 150 - 200 50 V+ = + 12 V V- = 0 V 200 t ON 150 300 T = 25 C 100 t OFF 0 1 2 3 4 5 6 7 8 9 10 11 12 0 4 8 12 16 20 24 28 32 36 Supply Voltage (V) VCOM - Analog Voltage (V) Charge Injection vs. Analog Voltage 350 300 250 Q - Charge Injection (pC) 200 150 100 50 0 - 50 - 100 - 150 - 200 - 250 - 300 - 350 - 15 - 10 -5 0 5 VCOM - Analog Voltage (V) 10 15 0 - 55 50 tON/tOFF (ns) V+ = + 5 V V- = - 15 V CL = 1 nF 250 300 Switching Time vs. Single Supply Voltage 200 t ON , V+ = 7 V 150 t ON , V+ = 12 V 100 t OFF , V+ = 7 V t OFF , V+ = 12 V - 40 25 Temperature (C) 85 125 Charge Injection vs. Analog Voltage Switching Time vs. Temperature and Single Supply Voltage 300 T = 25 C 350 300 250 t ON, V = 4.5 V tON/tOFF (ns) 200 150 t ON, V = 15 V 100 50 t OFF, V = 4.5 V t OFF, V = 15 V tON/tOFF (s) 250 200 t ON 150 100 t OFF 50 0 - 55 0 - 40 25 Temperature (C) 85 125 4 6 8 10 12 14 16 18 20 Supply Voltage (V) Switching Time vs. Temperature and Dual Supply Voltage www.vishay.com 6 Switching Time vs. Dual Supply Voltage Document Number: 71470 S-72541-Rev. C, 17-Dec-07 DG469/470 Vishay Siliconix TYPICAL CHARACTERISTICS 0 - 10 - 20 - 30 - 40 dB - 50 - 60 - 70 - 80 - 90 0 Hz XTALK OIRR BW 1.8 1.6 VT - Switching Threshold (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 300 kHz 1 MHz 10 MHz 100 MHz 1 GHz 4 8 12 16 20 24 28 32 36 Frequency (Hz) V+ - Supply Voltage (V) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 1.8 1.6 VT - Switching Threshold (V) 1.4 1 Switching Threshold vs. Signal Supply Voltage + 12 V 1.2 1.0 0.8 0.6 0.4 0.2 10 V 0 4 6 8 10 12 14 16 18 20 V+ - Supply Voltage (V) 0.001 10 100 1000 Frequency (Hz) 10000 100000 THD (%) 0.1 15 V 0.01 Switching Threshold vs. Dual Supply Voltage DG469, DG470 Total Harmonic Distortion TEST CIRCUITS + 15 V Logic Input V+ 10 V S IN GND VRL 300 CL 35 pF D 0V VO Switch Input VS VO 90 % 90 % tOFF 3V 50 % tr < 5 ns tf < 5 ns 0V - 15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) Note: tON Logic input waveform is inverted for switches that have the opposite logic sense control. Figure 1. Switching Time Document Number: 71470 S-72541-Rev. C, 17-Dec-07 www.vishay.com 7 New Product DG469/470 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ VNO VNC NO NC IN GND VRL 50 CL 35 pF COM VO VNC = VNO VO Switch Output 0V tD tD VINH VINL tr < 5 ns tf < 5 ns 90 % - 15 V CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make VO Switch under test NO NC IN VINH VINL Rg VINH or VINL + 15 V VO EN X NO or NC VO CL 1 nF VEN X OFF ON Q = VO x CL OFF OFF ON OFF IN COM EN V+ Vg 3V GND - 15 V Figure 3. Charge Injection + 15 V C V+ + 15 V C V+ VS Rg = 50 S D VO S IN 0 V, 2.4 V GND VC RL 50 0 V, 2.4 V IN Meter HP4192A Impedance Analyzer or Equivalent C D - 15 V VO VS C = RF Bypass - 15 V GND V- Off Isolation = 20 log Figure 4. Off-Isolation Figure 5. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71470. www.vishay.com 8 Document Number: 71470 S-72541-Rev. C, 17-Dec-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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