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CHA3688AQDG
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3688AQDG is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in lead-free package.
UMS A3688A A3667A YYWWG
Gain and NF @ 115mA (BD grounded)
Main Features
Broadband performance 12.5 - 30GHz 2.1dB noise figure 26dB gain 26dBm Output IP3 Low DC power consumption 24L-QFN4x4 SMD package RF ports ESD protected (see page 14)
Gain & NF (dB)
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 12 14 16 18 20 22 24 26 28 30
Gain
NF
Frequency (GHz)
Main Characteristics
Tamb = +25 Vd1=Vd2=Vd3 = +4V C, Symbol NF G OIP3 Noise figure Gain 3rd order intercept point (16 - 30GHz) 21 24 Pads: B, D = GND (High current configuration) Min Typ 2.1 26 26 Max 2.5 Unit dB dB dBm
Parameter
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3688AQDG8073 - 13 Mar 08 1/16 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3688AQDG
Tamb = +25 Vd1=Vd2=Vd3= +4V C,
12.5-30GHz Low Noise Amplifier
Electrical Characteristics (low current configuration)
Pads B, D not connected
Symbol Fop G G NF
Parameter Operating frequency range Linear Gain (12.5 - 24GHz) Linear Gain (24.5 - 30GHz) Gain flatness (12.5 - 24GHz) Gain flatness (24.5 - 30GHz) Noise figure (12.5 - 16GHz) Noise figure (16.5 - 24GHz) Noise figure (24.5 - 30GHz)
Min 12.5 22 20
Typ 25 23 1.5 2 2.3 2.0 2.2 2.5:1 2.0:1 2.0:1
Max 30
Unit GHz dB dB dB dB
2.6 2.3 2.5 3.0:1 2.5:1 2.5:1
dB dB dB
IS11I
Input return loss (12.5 - 16GHz) (27 - 30GHz) Input return loss (16.5 - 26.5GHz)
IS22I OIP3 P1dB Id Vd
Output return loss 3rd order intercept point @ Pout SCL < 8dBm from 16 to 30GHz Output power at 1dB gain compression Drain bias current Drain bias voltage 23 13
25 14 85 4 115
dBm dBm mA V
These values are representative of onboard measurements as defined on the drawing 96270 (see below).
Ref. : DSCHA3688AQDG8073 - 13 Mar 08
2/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12.5-30GHz Low Noise Amplifier
CHA3688AQDG
Electrical Characteristics (high current configuration)
Tamb = +25 Vd1=Vd2=Vd3 = +4V C, Pads B, D = GND
Symbol Fop G G NF
Parameter Operating frequency range Linear Gain (12.5 - 24GHz) Linear Gain (24.5 - 30GHz) Gain flatness Noise figure (12.5 - 16GHz) Noise figure (16.5 - 24GHz) Noise figure (24.5 - 30GHz)
Min 12.5 23 21
Typ 26 24 2 2.3 2.0 2.2 2.5:1 2.0:1 2.0:1
Max 30
Unit GHz dB dB dB
2.6 2.3 2.5 3.0:1 2.5:1 2.5:1
dB dB dB
IS11I
Input return loss (12.5 - 16GHz) (27 - 30GHz) Input return loss (16.5 - 26.5GHz)
IS22I OIP3 P1dB Id Vd
Output return loss 3rd order intercept point @ Pout SCL < 8dBm from 16 to 30GHz Output power at 1dB gain compression Drain bias current Drain bias voltage 24 14
26 15 115 4 150
dBm dBm mA V
These values are representative of onboard measurements as defined on the drawing 96270 (see below).
Absolute Maximum Ratings (1)
Tamb = +25 C Symbol Vd Pin Top Tj Tstg Drain bias voltage RF input power Operating temperature range Junction temperature (2) Storage temperature range Parameter Values 4.5 10 -40 to +85 175 -55 to +125 Unit V dBm C C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref.: DSCHA3688AQDG8073 - 13 Mar 08
3/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3688AQDG
12.5-30GHz Low Noise Amplifier
Thermal data based on board defined page 15
DEVICE THERMAL SPECIFICATION : CHA3688a-QDG low current config. Max. junction temperature (Tj max) : 125 C Max. continuous dissipated power @ Tcase= 85 C : 0,3 W => Pdiss derating above Tcase= 85 C : 8,6 mW/ C Device thermal resistance (Rth) : 116,4 C/W Min. package back side operating temperature : -40 C Max. package back side operating temperature : 85 C Min. storage temperature : -55 C Max. storage temperature : 125 C
0,4 0,35 0,3 0,25 0,2 0,15 Pdiss. Max. (W) 0,1 0,05 0 -0,05 -50 -25 0 25 50 75 100 125 150
Pdiss. Max. (W)
Tcase (C)
DEVICE THERMAL SPECIFICATION : CHA3688a-QDG with BD grounded Max. junction temperature (Tj max) : 139 C Max. continuous dissipated power @ Tcase= 85 C : 0,5 W => Pdiss derating above Tcase= 85 C : 8,6 mW/ C Device thermal resistance (Rth) : 116,4 C/W Min. package back side operating temperature : -40 C Max. package back side operating temperature : 85 C Min. storage temperature : -55 C Max. storage temperature : 125 C
0,5 0,45 0,4 0,35 0,3 0,25 Pdiss. Max. (W) 0,2 0,15 0,1 0,05 0 -50 -25 0 25 50 75 100 125 150
Pdiss. Max. (W)
Tcase (C)
Ref. : DSCHA3688AQDG8073 - 13 Mar 08
4/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12.5-30GHz Low Noise Amplifier
CHA3688AQDG
Pads B, D not connected
Typical Package Sij parameters for low current configuration
Tamb = +25 Vd1=Vd2=Vd3= +4V, Id = 85 mA C,
Freq (GHz)
dB(S11)
P(S11) ( )
dB(S12)
P(S12) ( )
dB(S21)
P (S21) ( )
dB(S22)
P(S22) ( )
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
-1,3 -1,2 -1,1 -1,0 -0,9 -1,3 -2,6 -4,8 -5,6 -5,3 -4,8 -4,8 -5,2 -6,1 -7,6 -9,4 -12,0 -14,5 -17,2 -20,2 -16,7 -14,6 -13,3 -12,2 -10,5 -8,6 -7,7 -7,7 -6,4 -4,9 -4,4 -3,1 -2,1 -1,2 -1,2 -1,2 -1,2 -1,6 -2,6
66 14 -34 -79 -124 -178 117 42 -27 -83 -128 -167 157 122 91 56 26 -6 -28 -34 -69 -107 -146 -175 161 130 91 53 2 -55 -106 -141 -172 162 139 122 105 90 71
-63,8 -62,8 -62,9 -68,4 -61,8 -59,6 -61,0 -62,0 -59,3 -53,6 -52,4 -55,4 -51,0 -56,9 -57,5 -47,2 -51,8 -49,0 -58,8 -49,9 -49,0 -47,2 -48,4 -48,2 -50,6 -47,7 -45,5 -47,8 -37,9 -42,9 -37,5 -44,7 -43,4 -46,5 -34,6 -33,9 -32,7 -38,1 -39,0
-33 61 140 99 -70 71 -1 -111 164 134 94 43 33 36 176 -157 92 67 30 34 40 20 -5 -3 -12 2 -17 47 -51 -24 -65 -110 -69 27 -70 -90 -103 -114 -118
-67,2 -57,0 -57,9 -31,8 -13,3 1,2 9,1 15,9 19,5 22,0 23,7 24,8 25,8 26,8 27,0 27,0 27,1 27,3 26,8 26,4 25,9 25,3 24,7 24,2 23,7 23,2 22,9 22,0 21,1 18,5 14,5 10,9 6,4 1,3 -4,4 -10,7 -17,8 -24,8 -32,8
-134 24 30 -63 -143 118 24 -62 -144 142 74 13 -44 -101 -157 151 101 49 0 -46 -93 -140 176 129 86 38 -9 -60 -116 -176 134 84 38 -6 -44 -73 -98 -113 -85
-1,4 -1,5 -1,7 -2,4 -4,8 -9,9 -19,3 -23,9 -14,5 -12,9 -14,1 -15,3 -15,3 -13,7 -12,2 -10,3 -9,0 -8,8 -9,6 -10,4 -13,6 -15,7 -15,7 -17,2 -15,7 -13,7 -13,2 -13,4 -14,9 -14,0 -11,3 -7,8 -5,1 -3,5 -2,3 -1,6 -1,3 -1,6 -2,8
61 0 -60 -120 -178 126 87 -14 -159 136 89 58 27 -6 -40 -70 -111 -149 -179 149 130 125 117 122 118 102 79 39 -5 -55 -96 -133 -162 173 150 131 113 93 75
Refer to the "definition of the Sij reference planes" section below.
Ref.: DSCHA3688AQDG8073 - 13 Mar 08
5/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3688AQDG
12.5-30GHz Low Noise Amplifier
Typical Package Sij parameters for high current configuration
Tamb = +25 Vd1=Vd2=Vd3= +4V, Id = 115 mA C, Pads B, D = GND
Freq (GHz)
dB(S11)
P(S11) ( )
dB(S12)
P(S12) ( )
dB(S21)
P (S21) ( )
dB(S22)
P(S22) ( )
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
-1,3 -1,2 -1,1 -1,0 -0,9 -1,3 -2,7 -4,9 -5,7 -5,3 -4,8 -4,7 -5,1 -6,2 -7,4 -9,4 -11,6 -14,0 -16,4 -19,3 -16,8 -15,0 -13,7 -12,0 -10,3 -9,0 -8,3 -7,5 -6,3 -5,1 -4,5 -3,0 -2,1 -1,2 -1,2 -1,4 -1,3 -1,7 -2,4
66 14 -34 -79 -124 -178 117 42 -27 -83 -128 -167 158 122 91 54 27 -5 -29 -48 -72 -109 -149 -176 158 129 91 51 2 -57 -107 -142 -173 162 139 122 105 90 70
-75,4 -62,1 -74,0 -79,6 -84,9 -63,2 -64,3 -73,9 -56,5 -57,7 -54,9 -55,2 -53,6 -48,5 -57,7 -55,6 -51,6 -51,0 -48,8 -49,5 -48,5 -47,6 -49,0 -47,4 -48,6 -47,1 -38,4 -42,0 -40,8 -41,5 -37,7 -43,9 -50,3 -39,6 -34,6 -32,7 -38,2 -38,3 -39,4
159 -168 65 -146 160 24 31 84 -150 126 86 30 116 -47 140 135 119 75 58 59 29 25 -17 3 2 -24 -21 16 -34 -56 -58 -115 -135 -15 -45 -105 -109 -142 -105
-77,1 -56,8 -57,0 -30,6 -12,4 1,8 9,9 16,6 20,2 22,7 24,3 25,4 26,4 27,2 27,6 27,6 27,7 27,9 27,5 27,2 26,7 26,2 25,4 24,9 24,5 23,9 23,4 22,8 22,0 19,4 15,3 11,8 7,2 2,1 -3,9 -10,2 -16,9 -22,1 -25,1
115 7 6 -61 -144 118 23 -62 -145 142 74 13 -44 -100 -156 152 103 52 2 -44 -92 -139 177 131 87 38 -7 -58 -115 -175 134 84 38 -6 -45 -74 -92 -91 -73
-1,4 -1,5 -1,7 -2,6 -5,0 -9,8 -20,6 -27,6 -13,9 -12,4 -13,5 -14,8 -15,4 -13,0 -11,6 -9,8 -8,7 -8,5 -9,0 -10,0 -13,0 -15,5 -15,9 -18,0 -16,6 -14,4 -14,2 -14,2 -14,9 -14,6 -11,4 -7,8 -5,2 -3,6 -2,3 -1,6 -1,4 -1,8 -2,1
61 0 -61 -120 -178 128 92 -18 -168 130 84 53 21 -8 -44 -75 -112 -150 179 148 128 117 112 116 113 102 75 39 -6 -54 -98 -133 -163 172 148 129 112 92 75
Refer to the "definition of the Sij reference planes" section below.
Ref. : DSCHA3688AQDG8073 - 13 Mar 08
6/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12.5-30GHz Low Noise Amplifier
Typical Measured Performance
Tamb = +25 Vd1=Vd2=Vd3= +4V C, Id = 85mA for pads B, D not connected Id = 115mA for pads B, D = GND
CHA3688AQDG
Measurements in the package access planes, using the proposed land pattern & board 96270.
Gain and Return Losses @ 85mA
30 25
Gain & Return Losses (dB)
20 15 10 5 0 -5 -10 -15 -20 -25 10 12 14 16 18 20 22 24 26 28 30 32 S21 S11 S22
Frequency (GHz)
5 4.5 4 3.5
Noise Figure versus frequency @ 85mA
NF (dB)
3 2.5 2 1.5 1 0.5 0 10 12 14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
Ref.: DSCHA3688AQDG8073 - 13 Mar 08
7/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3688AQDG
12.5-30GHz Low Noise Amplifier
Gain and Return Losses @ 115mA (BD grounded)
30 25
Gain & Return Losses (dB)
20 15 10 5 0 -5 -10 -15 -20 -25 10 12 14 16 18 20 22 24 26 28 30 32 S21 S11 S22
Frequency (GHz)
5 4.5 4 3.5
Noise Figure versus frequency @ 115mA (BD grounded)
NF (dB)
3 2.5 2 1.5 1 0.5 0 10 12 14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
Ref. : DSCHA3688AQDG8073 - 13 Mar 08
8/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12.5-30GHz Low Noise Amplifier
CHA3688AQDG
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 2 4 6 8
Gain and Return Losses @ 115mA (BD grounded)
S21 S11 S22
Gain & Return Losses (dB)
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Frequency (GHz)
20 19
Typical Output Power -1dB @ 85mA and 115mA
P1dB @ 115mA P1dB @ 85mA
Output Power P-1dB (dBm)
18 17 16 15 14 13 12 11 10 9 8 10 12 14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
Ref.: DSCHA3688AQDG8073 - 13 Mar 08
9/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3688AQDG
12.5-30GHz Low Noise Amplifier
Output IP3 versus output power @ 85mA
30 28 26 24
Output IP3 (dBm)
22 20 18 16 14 12 10 8 6 0 1 2 3 4 5 6 7 8 9 10 11 12 13 12GHz 16GHz 20GHz 24GHz 28GHz 30GHz
Single Output Power (dBm)
55 50 45 40 35
C/I3 versus output power @ 85mA
C/I3 (dB)
30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 12GHz 16GHz 20GHz 24GHz 28GHz 30GHz
Single output power (dBm)
Ref. : DSCHA3688AQDG8073 - 13 Mar 08
10/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12.5-30GHz Low Noise Amplifier
CHA3688AQDG
Output IP3 versus output power @ 115mA (BD grounded)
30 28 26 24
Output IP3 (dBm)
22 20 18 16 14 12 10 8 6 2 3 4 5 6 7 8 9 10 11 12 13 14 12GHz 16GHz 20GHz 24GHz 28GHz 30GHz
Single Output Power (dBm)
C/I3 versus output power @ 115mA (BD grounded)
55 50 45 40 35
C/I3 (dB)
30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 12GHz 16GHz 20GHz 24GHz 28GHz 30GHz
Single output power (dBm)
Ref.: DSCHA3688AQDG8073 - 13 Mar 08
11/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3688AQDG
Package outline:
12.5-30GHz Low Noise Amplifier
Matt Free Units
tin,
Lead
(Green) mm JEDEC MO-220 (VGGD-6 / VGGD-8)
123456789101112-
NC GND GND RF IN GND GND NC NC B NC D NC
131415161718192021222324-
GND GND RF OUT GND GND NC Vd3 NC Vd2 NC Vd1 NC
From the standard
25- GND
Ref. : DSCHA3688AQDG8073 - 13 Mar 08
12/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12.5-30GHz Low Noise Amplifier
Definition of the Sij reference planes
CHA3688AQDG
The reference planes are defined from the footprint of the recommended characterization board 96270 shown below. The reference is the symmetrical axis of the package. The input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. Then, the given Sij incorporates this land pattern.
3.1 8
3.1 8
SMD mounting procedure
The SMD leadless package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB (motherboard) are given in the drawings above. For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017.
Ref.: DSCHA3688AQDG8073 - 13 Mar 08
13/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3688AQDG
Package biasing options
12.5-30GHz Low Noise Amplifier
This chip is self-biased, and flexibility is provided by the access to number of leads. The internal DC electrical schematic is given in order to use these leads in a safe way.
Vd1 1.34k 0.4k 42 3k 0.42k
Vd2 3k 5 0.42k
Vd3
3.3
RFin
RFout
112
11.6
20
9.9
13.4
B
D
We propose two standard biasing: Low Noise and low consumption: Vd = 4V and B & D leads non connected (NC). Idd = 85mA & Pout-1dB = 14dBm Typical. Low Noise and higher output power: Vd = 4V and B, D grounded. Idd = 115mA & Pout-1dB = 15dBm Typical.
Note
Due to ESD protection circuits, RFin and RFout are DC grounded and an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses.
The DC connections (Vd1, Vd2 and Vd3) do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling (typically 10nF) on the PC board, as close as possible to the package.
Ref. : DSCHA3688AQDG8073 - 13 Mar 08
14/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12.5-30GHz Low Noise Amplifier
CHA3688AQDG
Proposed Assembly board "96270" for the 24L-QFN4x4 products characterization.
- - - Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a microstrip to coplanar transition to access the package. Recommended for the implementation of this product on a module board.
-
Vd1
Vd2
Vd3
B
D
Decoupling capacitors of 10nF 10% are recommended for all DC accesses.
Ref. : DSCHA3688AQDG8073 - 13 Mar 08
15/16
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3688AQDG
12.5-30GHz Low Noise Amplifier
Ordering Information
QFN 4x4 RoHS compliant package: CHA3688AQDG/XY Stick: XY = 20 Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA3688AQDG8073 - 13 Mar 08
16/16
/Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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