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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4178
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
* Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 30 A) * Low gate to drain charge QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A) * 4.5 V drive available
ORDERING INFORMATION
PART NUMBER 2SK4178(1)-S27-AY 2SK4178-ZK-E1-AY 2SK4178-ZK-E2-AY
Note Note Note
LEAD PLATING
PACKING Tube 75 p/tube
PACKAGE TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g
Pure Sn (Tin)
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
(TO-251) 30 20 48 144 33 1.0 150 -55 to +150 23 52.9 V V A A W W C C A mJ (TO-252)
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 20 0 V, L = 0.1 mH
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D19080EJ1V0DS00 (1st edition) Date Published December 2007 NS Printed in Japan
2007
2SK4178
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 10 V, ID = 12 A VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 12 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 15 V, ID = 30 A, VGS = 10 V, RG = 3
MIN.
TYP.
MAX. 10 100
UNIT
A
nA V S
1.5 7
2.0 15 6.8 9.8 1500 360 126 9 9.7 32 7.7
2.5
Drain to Source On-state Resistance
9.0 15
m m pF pF pF ns ns ns ns nC nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge
Ciss Coss Crss td(on) tr td(off) tf QG1 QG2
VDD = 15 V, VGS = 10 V, ID = 30 A VDD = 15 V, VGS = 4.5 V, ID = 30 A VDD = 15 V, ID = 30 A
24 11.5 3.7 3.7 1.2
Gate to Source Charge Gate to Drain Charge Gate Resistance Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
QGS QGD RG VF(S-D) trr Qrr
IF = 30 A, VGS = 0 V IF = 30 A, VGS = 0 V, di/dt = 100 A/s
0.87 29 23
1.5
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 Starting Tch = 1 s Duty Cycle 1% VDS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS RG
Wave Form
50
0
10%
VGS
90%
VDD VDS
90% 90% 10% 10%
IAS ID VDD
VDS
0
td(on) ton
tr
td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D19080EJ1V0DS
2SK4178
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120 40
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150
PT - Total Power Dissipation - W
35 30 25 20 15 10 5 0 0 25 50 75 100 125 150
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
TC - Case Temperature - C DRAIN CURRENT vs. CASE TEMPERATURE
80 70
ID - Drain Current - A
1i 0
0
10
R
(o DS
n) G
(V
d it e Lim V ) 1i 0 = S
s
ID - Drain Current - A
100
ID(DC)
PW
=
60 50 40 30 20 10 0
Po w
er D
is
si p
at io
n
1
TC = 25C Single pulse
Li m it e d
1i mi s 1i0 mi s
0.1 0.1
1
10
100
0
25
50
75
100
125
150
VDS - Drain to Source Voltage - V
TC - Case Temperature - C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 125C/W 100
10
Rth(ch-C) = 3.8C/W 1
Single pulse 0.1 100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19080EJ1V0DS 3
2SK4178
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
200 VGS = 10 V 100 10
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
ID - Drain Current - A
150
1 0.1 0.01 0.001
100 4.5 V
Tch = -55C -25C 25C 75C 125C 150C VDS = 10 V Pulsed 0 1 2 3 4 5
50
Pulsed 0 0 0.5 1 1.5 2 2.5 3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S
3 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 175 VDS = VGS ID = 250 A
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
VDS = 10 V Pulsed
Tch = -55C -25C
10
1
25C 75C 125C 150C
0.1 0.1 1 10 100
ID - Drain Current - A
Tch - Channel Temperature - C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
15 ID = 30 A 9.6 A 10 Pulsed
20
15 VGS = 4.5 V
10
5
10 V Pulsed
5
0 1 10 100 1000
ID - Drain Current - A
0 0 5 10 15 20
VGS - Gate to Source Voltage - V
4
Data Sheet D19080EJ1V0DS
2SK4178
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
20 VGS = 4.5 V, ID = 12 A 10000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
15
Ciss 1000 Coss
10 10 V, 30 A 5 Pulsed 0 -75 -25 25 75 125 175
100 Crss VGS = 0 V f = 1 MHz 10 0.1 1 10 100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 10 VDD = 24 V 15 V 8 6 15 10 5 0 VGS 4 2 VDS 0 10 20 ID = 30 A 0 30
td(on), tr, td(off), tf - Switching Time - ns
td(off) tf 10 td(on) tr VDD = 15 V VGS = 10 V RG = 3 0.1 1 10 100
VDS - Drain to Source Voltage - V
25 20
1
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000 1000
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
IF - Diode Forward Current - A
100 10 1 0.1
10 V VGS = 4.5 V 0V
trr - Reverse Recovery Time - ns
100
10 VGS = 0 V di/dt = 100 A/s 1 0.1 1 10 100
Pulsed 0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D19080EJ1V0DS
5
VGS - Gate to Source Voltage - V
2SK4178
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100 120
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 15 V RG = 25 VGS = 20 0 V IAS 23 A
IAS - Single Avalanche Current - A
IAS = 23 A
Energy Derating Factor - %
100 80 60 40 20 0
10
EAS = 52.9 mJ
1 0.01
VDD = 15 V RG = 25 VGS = 20 0 V Starting Tch = 25C 0.1 1 10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D19080EJ1V0DS
2SK4178
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-b)
1.06 TYP.
6.60.2 5.3 TYP. 4 2.30.1 0.50.1
2) TO-252 (MP-3ZK)
1.0 TYP.
6.50.2 5.1 TYP. 4.3 MIN. 4
2.30.1 0.50.1 No Plating
1.10.13
4.13 TYP.
1.14 MAX.
1
0.8
2
3
No Plating 0 to 0.25 0.50.1 1.0
0.760.12 2.3 TYP. 2.3 TYP.
0.50.1
1.14 MAX. 2.3 2.3
0.760.12
1.04 TYP.
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
0.51 MIN.
7
1
2
3
Data Sheet D19080EJ1V0DS
6.10.2 10.4 MAX. (9.8 TYP.)
6.10.2
11.25 TYP.
4.0 MIN.
2SK4178
* The information in this document is current as of December, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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