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| NPN EPITAXIAL SILICON TRANSISTORS High Voltage Transistor Die Size 0.6*0.6mm Power Dissipation: 225mW Collector Current: Max. 500mA Bonding Pad Size Emitoe 100*100mkm Base 100*100mkm WMBTA42 SOT-- --23 * * * * 1. BASE 2. EMITTER 3. COLLECTOR GUARANTEED PROBED CHARACTERISTICS (TA=25) Characteristic Collector-emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Transition Frequency Collector-Base Capacitance Symbol VCEO VCBO ICBO IEBO hFE Test Conditions IC=1.0mA IC=100uA VCB=260V VEB=6V VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, Ib=2mA IC=20mA, IB=2mA VCE=20V, IC=10mA,f=10MHz VCB=20V, f=1MHz Limits Min Typ Max 300 Units V V 300 30 40 40 50 - - 100 100 - nA nA - VBEsat VCEsat fr Ccb - 0.90 0.35 3.0 V V MHz pF NOTES: Due to probe testing limitations, only the DC parameters are tested. Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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