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UMF9N Transistors Power management (dual transistors) UMF9N 2SC5585 and 2SK3019 are housed independently in a UMT package. !Application Power management circuit !External dimensions (Units : mm) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (4) 0.65 1.3 0.65 0.7 0.9 (3) 0.2 (6) 1.25 2.1 !Equivalent circuits (3) (2) (1) ROHM : UMT6 EIAJ : SC-88 Tr2 Tr1 (4) (5) (6) !Packaging specifications Type Package Marking Code Basic ordering unit (pieces) UMF9N UMT6 F9 TR 3000 0~0.1 !Structure Silicon epitaxial planar transistor 0.15 0.1Min. Each lead has same dimensions (1) 2.0 (5) (2) 1/5 UMF9N Transistors !Absolute maximum ratings (Ta=25C) Tr1 Limits Symbol 15 VCBO VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg -55~+150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Unit V V V mA A mW C C 1 2 1 Single pulse PW=1ms 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Tr2 Symbol Limits Parameter VDSS 30 Drain-source voltage VGSS 20 Gate-source voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain current IDRP 200 Pulsed Total power dissipation 150(TOTAL) PD Tch 150 Channel temperature Tstg -55~+150 Range of storage temperature Unit V V mA mA mA mA mW C C 1 1 2 1 PW10ms Duty cycle50% 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 - - - 270 - - Typ. - - - - - 100 - 320 7.5 Max. - - - 100 100 250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=1mA IC=10A IE=10A VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=-10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Tr2 Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. 1 - 1.0 1.5 8 13 - - - - - - - - Unit A V A V ms pF pF pF ns ns ns ns Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V, VGS=0V, f=1MHz ID=10mA, VDD 5V, VGS=5V, RL=500, RGS=10 2/5 UMF9N Transistors !Electrical characteristic curves Tr1 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE=2V Pulsed DC CURRENT GAIN : hFE 1000 Ta=125C Ta=25C Ta=-40C 1000 Ta=25C Pulsed VCE=2V Pulsed 100 100 100 C Ta= -40 C Ta=12 5 C Ta=25 IC/IB=50 10 10 10 IC/IB=20 IC/IB=10 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 1 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 IC/IB=20 Pulsed 10000 100 Ta=125C 25C -40C 10 1000 Ta=25C Ta=-40C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 Pulsed 1000 VCE=2V Ta=25C Pulsed 100 Ta=125C 100 10 1 1 10 100 1000 10 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Gain bandwidth product vs. emitter current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 TRANSITION FREQUENCY : IC (A) IE=0A f=1MHz Ta=25C 100 Cib 10 Ta=25C Single Pulsed 1 10ms 100ms DC 1ms 0.1 10 Cob 0.01 1 0.1 1 10 100 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) EMITTER CURRENT : VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.8 Safe operation area 3/5 UMF9N Transistors Tr2 GATE THRESHOLD VOLTAGE : VGS(th) (V) 200m 100m DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS=3V Pulsed 2 50m 20m 10m 5m 2m 1m 0.5m VDS=3V ID=0.1mA Pulsed 50 VGS=4V Pulsed 20 10 5 1.5 Ta=125C 75C 25C -25C 1 Ta=125C 75C 25C -25C 2 1 0.5 0.001 0.002 0.5 0.2m 0.1m 0 1 2 3 4 0 -50 -25 0 25 50 75 100 125 150 0.005 0.01 0.02 0.05 0.1 0.2 0.5 GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) Fig.9 Typical transfer characteristics Fig.10 Gate threshold voltage vs. channel temperature Fig.11 Static drain-source on-state resistance vs. drain current ( ) 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 20 10 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () Ta=125C 75C 25C -25C VGS=2.5V Pulsed 15 Ta=25C Pulsed 9 8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 ID=100mA VGS=4V Pulsed 10 ID=50mA 2 1 0.5 0.001 0.002 5 ID=0.1A ID=0.05A 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0 5 10 15 20 100 125 150 DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) Fig.12 Static drain-source on-state resistance vs. drain current ( ) Fig.13 Static drain-source on-state resistance vs. gate-source voltage Fig.14 Static drain-source on-state resistance vs. channel temperature 0.5 REVERSE DRAIN CURRENT : IDR (A) 0.2 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m REVERSE DRAIN CURRENT : IDR (A) VDS=3V Pulsed 200m VGS=0V Pulsed 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V Ta=25C Pulsed 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.0002 Ta=-25C 25C 75C 125C Ta=125C 75C 25C -25C 0V 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5 0 0.5 1 1.5 DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.15 Forward transfer admittance vs. drain current Fig.16 Reverse drain current vs. source-drain voltage ( ) Fig.17 Reverse drain current vs. source-drain voltage ( ) 4/5 UMF9N Transistors 50 Ta=25C f=1MHZ VGS=0V SWITHING TIME : t (ns) 1000 tf 500 td(off) 20 CAPACITANCE : C (pF) 200 100 50 20 10 5 2 0.1 0.2 tr td(on) Ta=25C VDD=5V VGS=5V RG=10 Pulsed 10 5 Ciss Coss Crss 2 1 0.5 0.1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.18 Typical capacitance vs. drain-source voltage Fig.19 Switching characteristics 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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