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| SK 260MB10 Absolute Maximum Ratings Symbol Conditions MOSFET Values Units Inverse diode SEMITOP(R) 3 Mosfet Module SK 260MB10 Preliminary Data Freewheeling CAL diode Features Characteristics Symbol Conditions MOSFET min. typ. max. Units Typical Applications 1) Inverse diode Free-wheeling diode Mechanical data MB 1 21-10-2004 RAM (c) by SEMIKRON SK 260MB10 Fig. 3 Output characteristic, tp = 80 s, Tj = 25 C Fig. 5 Breakdown voltage vs. temperature Fig. 6 Typ. capacitancies vs. drain-source voltage Fig. 7 Gate charge characteristic, IDp = 300 A Fig. 8 Diode forward characteristic, tp = 80 s 2 21-10-2004 RAM (c) by SEMIKRON SK 260MB10 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 21-10-2004 RAM (c) by SEMIKRON |
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