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| RB550EA Diodes Schottky barrier diode RB550EA Applications Low current rectification External dimensions (Unit : mm) 2.90.1 0.40.05 Each lead has same dimension 0.1 Land size figure (Unit : mm) 0.8 1.0 min. 0.160.1 0.06 Features 1) Small mold type. (TSMD5) 2) Low VF, low IR. 3) High reliability. (5) (4) 0.45 0.35 2.80.2 0.2 0.1 0.7 0.35 0.45 1.6 00.1 0.30.6 0.95 TSMD5 0.95 1.9 (1) 0.95 (2) 0.95 (3) 0.330.03 0.70.1 0.850.1 1.0Max 1.90.2 Structure Construction Silicon epitaxial planar ROHM : TSMD5 dot(year week factory) + day Taping specifications (Unit : mm) 4.00.1 2.00.05 1.550.05 0.30.1 1.750.1 3.50.05 3.20.08 8.00.2 3.20.08 4.00.1 1.10.1 00.5 5.50.2 3.20.08 1.10.08 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak t=1msec) Junction temperature Storage temperature (*1) Rating of per diode. Symbol VR Io IFSM Tj Tstg Limits 30 0.7 12 150 -40 to +150 Unit V A A Electrical characteristics (Ta=25C, Rating of per diode.) Parameter Forward voltage Reverse current ESD break down voltage Symbol VF1 IR1 IR2 ESD Min. 0.39 Typ. 0.45 1 5.0 Max. 0.49 30.00 50 Unit V A A KV Conditions IF=0.7A VR=10V VR=30V C=100PF,R=1.5K Forwad and reverse : 1 times 15 2.4 1/3 RB550EA Diodes Electrical characteristic curves (Ta=25C) 1 Ta=75 100000 Ta=150 10000 Ta=125 Ta=75 Ta=25 1000 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 0.1 Ta=150 1000 100 10 1 0.1 0.01 Ta=-25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 Ta=125 Ta=25 Ta=-25 0.01 100 10 0.001 0 100 200 300 400 500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 490 30 200 Ta=25 VR=30V n=30pcs 190 180 170 160 150 140 130 120 110 AVE:149.9pF 100 IR DISPERSION MAP Ct DISPERSION MAP Ta=25 f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 470 460 450 AVE:459.6mV 440 VF DISPERSION MAP 20 15 10 AVE:3.141uA 5 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 480 REVERSE CURRENT:IR(nA) Ta=25 IF=0.7A n=30pcs 25 30 30 20 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 Ifsm 25 20 15 10 5 0 AVE:8.3ns PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm Ifsm 15 8.3ms 8.3ms 8.3ms 8.3ms 1cyc 1cyc 10 AVE:15.1A 5 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 30 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 1000 Mounted on epoxy board IM=10mA IF=0.2A 1 0.8 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 1 Ifsm t 1ms time Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 300us 0.6 0.4 0.2 0 D=1/2 Sin(180) DC 100 Rth(j-c) 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 0.001 0.1TIME:t(s) 10 Rth-t CHARACTERISTICS 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 1.5 2/3 RB550EA Diodes 1 0.8 1.5 DC Io t T VR D=t/T VR=15V Tj=150 1.5 D=1/2 DC Sin(180) 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1 D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1 0.6 0.4 0.2 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 Sin(180) D=1/2 DC 0.5 Sin(180) 0.5 0A 0V Io t T VR D=t/T VR=15V Tj=150 75 100 125 150 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 0 0 25 50 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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