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RB201A60
Diodes
Schottky barrier diode
RB201A60
Applications General rectification External dimensions (Unit : mm)
CATHODEBAND (BLUE) 0.60.1
Features 1) Cylindrical mold type.(MSR) 2) Low VF. 3) High ESD.
ROHM : MSR
291
3.00.2
3
291 2.50.2
Manufacture Date
Construction Silicon epitaxial planar
Taping specifications (Unit : mm)
IVORY H2 BLUE A E H2 Mark
Standard dimension (mm) value (mm)
B
C
T-31 52.41.5 T-32 26.0+0.4 -0 5.00.5 0.5 0 50.40.4 0.3 H1 6.00.5 H2 5.00.5 L1-L2 0.6 H1(6mm)BROWN
L1 H1 F
L2 H1 D
cf : cumulativ e pitch tolerance with 20 pitch than 1.5mm )201.5mm
Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak t=100s Junction temperature Tj Storage temperature Tstg
Limits 60 60 2 40 150 -55 to +150
Unit V V A A
(*1) Mounted on epoxy board. 180Half sine wave
Electrical characteristics (Ta=25C) Parameter Symbol
Forward voltage Reverse current
VF IR
Min. -
Typ. -
Max. 0.58 100
Unit V A
Conditions IF=2.0A VR=60V
Rev.A
1/3
RB201A60
Diodes
Electrical characteristic curves (Ta=25C)
10000 Ta=75 100000 Ta=125 Ta=150 100 Ta=-25 10 Ta=25 10000 Ta=150 Ta=125
1000
f=1MHz f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
1000
1000 100 10 1 0.1 0.01 Ta=75 Ta=25 Ta=-25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
10
1
0.1 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1
0 5 10 15 20 25 30
0
5
10
15
20
25
30
REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
400
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
560
100 Ta=25 IF=2A n=30pcs 90 Ta=25 VR=60V n=30pcs
380
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
550
REVERSE CURRENT:IR(uA)
80 70 60 50 40 30 20 10 AVE:7.24uA
360 340 320 300 280 260 240 220 200 AVE:316.3pF
Ta=25 f=1MHz VR=0V n=30pcs
540 AVE:541.7mV
530
520
510 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
300
30
100
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50 0
Ifsm
1cyc 8.3ms
25 20 15 10 5 0 AVE:9.5ns
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
90 80 70 60 50 40 30 20 10 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc
AVE:66.0A
IFSM DISRESION MAP 150 Ifsm 10000
trr DISPERSION MAP
Mounted on epoxy board
IF=0.5A IM=1mA time(ms) td=300us
3
PEAK SURGE FORWARD CURRENT:IFSM(A)
t 100
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
1000
100 Rth(j-l) 10 Rth(j-c)
50
FORWARD POWER DISSIPATION:Pf(W)
Rth(j-a)
2
Sin(180)
D=1/2
DC
1
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1 0.001
0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 1 2 3 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 4 5
Rev.A
2/3
RB201A60
Diodes
1 0.9
AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
5
5 0A 0V DC 3 D=1/2 t T Io VR D=t/T VR=30V Tj=150
0.8
REVERSE POWER DISSIPATION:PR (W)
4 DC D=1/2
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60 Sin(180) D=1/2 DC
0A 0V
Io t T VR D=t/T VR=30V Tj=150
4
3
2
2 Sin(180) 1
1 Sin(180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 150
30 No break at 30kV
ELECTROSTATIC DISCHARGE TEST ESD(KV)
25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:5.50kV
ESD DISPERSION MAP
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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