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PSMN063-150D
N-channel enhancement mode field-effect transistor
Rev. 03 -- 31 October 2001 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: PSMN063-150D in SOT428 (D-PAK).
1.2 Features
s TrenchMOSTM technology s Fast Switching s Very low on-state resistance s Low thermal resistance
1.3 Applications
s DC to DC converters s Switched mode power supplies
1.4 Quick reference data
s VDS = 150 V s Ptot = 150 W s ID = 29 A s RDSon 63 m
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) drain (d) source (s) connected to drain (d)
2 1 Top view 3
MBK091
Simplified outline
[1]
mb
Symbol
d
g s
MBB076
[1]
It is not possible to make a connection to pin 2 of the SOT428 package.
1.
TrenchMOSTM is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 and 3 IDM Ptot Tstg Tj IS ISM EAS peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current non-repetitive avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 26 A; tp = 0.2 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C unclamped inductive load; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions Tj = 25 to 175 Tj = 25 to 175
oC oC;
Min - RGS = 20 k - - - - - - -55 -55 - - -
Max 150 150 20 29 20 116 150 +175 +175 29 116 502
Unit V V V A A A W C C A A mJ
Source-drain diode
Avalanche ruggedness
IAS
non-repetitive avalanche current
-
29
A
9397 750 08594
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
2 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
120 Pder (%) 80
03aa16
120 I der (%)
03aa24
80
40
40
0 0 50 100 150 200 Tmb ( C)
o
0 0 50 100 150 200 o Tmb ( C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 10 V
ID I der = ------------------- x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
103 ID (A) 102 RDSon = VDS / ID
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
003aaa148
tp = 10 s 100 s 1 ms 100 ms 10 ms
10 DC
1
10-1 1 10 102 VDS (V)
103
Tmb = 25 C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08594
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
3 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
4. Thermal characteristics
Table 3: Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Figure 4 Vertical in still air Value 1.0 50 Unit K/W K/W
4.1 Transient thermal impedance
10 Zth(j-mb) (K/W) 1
003aaa149
=
0.5 0.2
10-1
0.1 0.05 0.02 single pulse
P t = p T
10-2
tp T
t
10-3 10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08594
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
4 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
5. Characteristics
Table 4: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 150 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 10 V; VDS = 0 V VGS = 10 V; ID = 15 A; Figure 7 and 8 Tj = 25 C Tj = 175 C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time source-drain (diode forward) voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; Figure 13 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V VDD = 75 V; RD = 2.7 ; VGS = 10 V; RG = 5.6 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 ID = 30 A; VDS = 120 V; VGS = 10 V; Figure 14 - - - - - - - - - - - - - 55 10 20 2390 240 98 14 50 48 38 0.9 105 0.55 - - 27 - - - - - - - 1.2 - - nC nC nC pF pF pF ns ns ns ns V ns C - - 60 - 63 176 m m - - - 0.05 - 0.02 10 500 100 A A nA 2 1 - 3 - - 4 - 6 V V V 150 133 - - - - V V Min Typ Max Unit Static characteristics
Source-drain diode
9397 750 08594
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
5 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
30 ID (A) 20
003aaa150
30 ID (A)
003aaa152
VGS (V) = 10 8.0
6.0
20 5.4 Tj = 175 oC 5.2 25 oC 10
10
5.0 4.8 4.6 4.4
0 0 0.4 0.8 1.2 1.6 2.0 VDS (V)
0 0 2 4 6 VGS (V) 8
Tj = 25 C
Tj = 25 C and 175 C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
0.20 RDSon () 0.16
003aaa151
4.4 4.6 4.8 5.0
2.8
a
03aa30
2.4 2.0
5.4
5.2 0.12
1.6
0.08 6 0.04 VGS (V) = 8 0 0 5 10 15 20 25 ID (A) 30 10
1.2
0.8
0.4 -60
-20
20
60
100
140 180 T (oC) j
Tj = 25 C
R DSon a = ----------------------------R DSon ( 25C ) Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 08594
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
6 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
5 VGS(th) (V) 4 max
03aa32
10-1
ID (A)
03aa35
10-2 10-3 10-4 10-5 10-6 min typ max
3
typ
2
min
1
0 -60
0
60
120
180
Tj (C)
0
2
4
VGS (V)
6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
40 gfs (S) 30 Tj = 25 oC
003aaa153
104 C (pF) 103 Ciss
003aaa154
Coss Crss
20
Tj = 175 oC 102
10
0
0
10
20
ID (A)
30
10 10-1
1
10
VDS (V)
102
Tj = 25 C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08594
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
7 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
30 IS (A) Tj = 175 oC 20
003aaa156
12 VGS (V) VDD = 30 V 8 Tj = 25 oC
003aaa155
VDD = 120 V
10
4
0
0
0.4
0.8 VSD (V)
1.2
0 0 20 40 60 QG (nC)
Tj = 25 C and 175 C; VGS = 0 V
ID = 30 A; VDD = 30 V and 120 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 14. Gate-source voltage as a function of gate charge; typical values.
9397 750 08594
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
8 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
6. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428
seating plane y A E b2 A A1 mounting base A2 D1
E1 D HE L2
2
L L1
1
b1 e e1 b
3
wM A c
0
10 scale
20 mm
DIMENSIONS (mm are the original dimensions) A UNIT max. mm 2.38 2.22 A1(1) 0.65 0.45 A2 0.89 0.71 b 0.89 0.71 b1 max. 1.1 0.9 b2 5.36 5.26 c 0.4 0.2 D1 E D max. max. max. 6.22 5.98 4.81 4.45 6.73 6.47 E1 min. 4.0 e e1 HE max. 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.7 0.5 w 0.2 y max. 0.2
2.285 4.57
Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 EIAJ SC-63 EUROPEAN PROJECTION ISSUE DATE 98-04-07 99-09-13
Fig 15. SOT428 (D-PAK).
9397 750 08594 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
9 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
7. Revision history
Table 5: Rev Date 03 20011031 Revision history CPCN Description Product data; third version; supersedes second version PSMN063_150D_2 of 1 August 1999.
*
02 01 19990801 -
Max value of Qgd added in table 5.
Product specification; second version PSMN063_150D_2; supersedes initial Lotus Manuscript version of August 1999 Rev 1.000. Initial version; not published.
9397 750 08594
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
10 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
8. Data sheet status
Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Product data
Production
[1] [2]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
9. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
10. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 08594
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 -- 31 October 2001
11 of 12
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
Contents
1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
(c) Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 October 2001 Document order number: 9397 750 08594

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