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| F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150C - 65C to +175C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. Devices in this Databook based on the NJ30L Process. Datasheet 2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 8 5 1.5 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 - 0.5 Min - 25 Typ - 30 - 10 - 100 40 -6 Max Unit V pA mA V NJ30L Process Test Conditions IG = - 1 A, VDS = OV VGS = - 15V, VDS = OV VDS = 15V, VGS = OV VDS = 15V, ID = 1 nA VDS = 15V, VGS = OV VDS = 15V, VGS = OV VDS = 15V, VGS = OV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-17 NJ30L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = 2.5 V Gfs as a Function of VGS(OFF) 10 Transconductance in mS 15 VGS = O V Drain Current in mA 12 VGS = - 0.5 V 9 VGS = -1.0 V 6 VGS = -1.5 V 3 VGS = -2.0 V 0 5 10 15 20 9 8 7 6 5 0 -1 -2 -3 -4 -5 -6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Forward Transconductance in mS Drain Saturation Current in mA 35 30 25 20 15 10 5 0 -1 -2 -3 -4 -5 -6 10 8 6 Forward Tranconductance vs. Drain Current IDSS = 10 mA IDSS = 16 mA IDSS = 24 mA 4 2 0.1 1 Drain Current in mA 10 20 Drain Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS 7 Feedback Capacitance in pF Input Capacitance in pF 6 VDS = 5 V 5 VDS = 15 V 4 3 2.5 2.0 1.5 1.0 0.5 Feedback Capacitance as a Function of VGS VDS = 5 V VDS = 15 V 0 4 8 12 16 0 -4 -8 - 12 - 16 Gate Source Voltage in Volts Gate Source Voltage in Volts |
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