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| 1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30 m InGaAs AVALANCHE PHOTO DIODE MODULE FEATURES * SMALL DARK CURRENT: ID = 5 nA * SMALL TERMINAL CAPACITANCE: CT = 0.35 pF at 0.9 V(BR)R * HIGH QUANTUM EFFICIENCY: = 90% at = 1 300 nm, M = 1 = 77% at = 1 550 nm, M = 1 * HIGH SPEED RESPONSE: fc = 2.5 GHz at M = 10 * DETECTING AREA SIZE: 30 m * COAXIAL MODULE WITH SINGLE MODE FIBER (SM-9/125) NDL5531P SERIES DESCRIPTION The NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1000 and 1600 nm. ELECTRO-OPTICAL CHARACTERISTICS (TC = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS V(BR)R ID IDM Ct fC S M X F PARAMETERS AND CONDITIONS Reverse Breakdown Voltage, ID = 100 A Temperature Coefficient of Reverse Breakdown Voltage1 Dark Current, VR = V(BR)R x 0.9 Multiplied Dark Current, M = 2 to 10 Terminal Capacitance, VR = V(BR)R x 0.9, f = 1 MHz Cut-off Frequency, M = 10 Quantum Efficiency, = 1 300 nm, M = 1 = 1 550 nm, M = 1 Responsivity, = 1 300 nm, M = 1 = 1 550 nm, M = 1 Multiplication Factor, = 1 300 nm, IPO = 1.0 A, VR = V (at ID = 1 A) Excess Noise Factor2, = 1 300 nm, 1 550 nm, IPO = 1.0 A, M = 10, f = 35 MHz, B = 1 MHz V(BR)R < 25C + TC > - V(BR)R < 25C> TC > - V(BR)R < 25C> UNITS V %/C nA nA pF GHz % A/W 2.5 76 65 0.80 0.81 30 90 77 0.94 0.96 40 0.7 5 MIN 50 NDL5531P Series TYP 70 0.2 5 1 0.35 25 5 0.60 MAX 100 M Note: 1. = 2. F = MX California Eastern Laboratories NDL5531P SERIES ABSOLUTE MAXIMUM RATINGS1 (TC = 25C, unless otherwise specified) SYMBOLS IF IR TC TSTG PARAMETERS Forward Current Reverse Current Operating Case Temp. Storage Temperature UNITS mA mA C C RATINGS 10 0.5 -40 to +85 -40 to +85 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TC = 25C, unless otherwise specified) WAVELENGTH DEPENDENCE OF QUANTUM EFFICIENCY TEMPERATURE DEPENDENCE OF RESPONSIVITY Responsivity (Relative Value), S/S (%) 100 10 = 1 300 nm Quantum Efficiency, (%) 80 60 0 40 20 0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -10 -60 -40 -20 0 20 40 60 80 100 Wavelength, (m) Case Temperature, TC (C) DARK CURRENT AND PHOTO CURRENT vs. REVERSE VOLTAGE DARK CURRENT vs. REVERSE VOLTAGE 10 -6 Dark Current, Photo Current, ID, IPH (A) 10 -3 10 -4 10 -5 10 -6 10 -7 10 -8 10 -9 10 -10 0 ID = 1 300 nm IPC = 1.0 A Dark Current, ID (A) Iph 10 -7 TC = 85C 10 -8 TC = 65C 10 -9 TC = 25C TC = 20C 20 40 60 80 100 10 -10 0 20 40 60 80 100 Reverse Voltage, VR (V) Reverse Voltage, VR (V) NDL5531P SERIES TYPICAL PERFORMANCE CURVES (TC = -40 to +85C) MULTIPLICATION FACTOR vs. REVERSE VOLTAGE 10 3 10 -6 TEMPERATURE DEPENDENCE OF DARK CURRENT vs. MULTIPLIED DARK CURRENT Dark Current, Mulitplied Dark Current, ID, IDM (A) = 1 300 nm Multiplication Factor, M 10 -7 ID at VR = 0.9 V(BR)R 10 2 10 -8 IDM 10 1 TC = 20C TC = 25C TC = 65C 10 -9 10 -10 TC = 85C 10 0 0 20 40 60 80 100 10 -11 -60 -40 -20 0 20 40 60 80 100 Reverse Voltage, VR (V) Case Temperature, TC (C) TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 100 2 CUT-OFF FREQUENCY vs. MULTIPLICATION FACTOR = 1 300 nm Terminal Capacitance, Ct (pF) Cut-off Frequency, fc (GHz) 1 10 G x B = 50 GHz 0.5 1 0.2 0.1 1 2 5 10 20 50 100 0.1 1 10 100 Reverse Voltage, VR (V) Multiplication Factor, M FREQUENCY RESPONSE = 1 300 nm RL = 50 M = 10 EXCESS NOISE FACTOR vs. MULTIPLICATION FACTOR 100 1300 nm ( ), 1550 nm ( f = 35 MHz, B = 1 MHz ) 9 6 50 Excess Noise Factor, F Response (dB) 0.5 0.4 20 3 0 -3 -6 -9 10 5 2 0 1.0 2.0 3.0 4.0 5.0 1 1 2 5 10 20 50 100 Frequency, f (GHz) Multiplication Factor, M NDL5531P SERIES OUTLINE DIMENSIONS (Units in mm) NDL5531P NDL5531P1 Optical Fiber SM-9/125 Length: 1 m MIN. Shrunk Tube Optical Fiber SM-9/125 Length: 1 m MIN. Shrunk Tube 2.5 30.0 MAX 6.0 - 0.1 +0.0 2.5 14.00.1 30.0 MAX 6.90.3 6.0- 0.1 12.5 MIN 0.45 3 1 +0.0 6.90.3 4.00.1 3.90.5 2-2.2 12.5 MIN 6.0 - 0.1 +0.0 2 7.00.3 3.00.3 2.0 1.5 2 3 1 4.00.3 2.0 18.00.1 3 1 PIN CONNECTIONS 1. Anode (Negative) 2. Cathode (Positive) 3. Case NDL5531P2 2 Optical Fiber SM-9/125 Length: 1 m MIN. Shrunk Tube ORDERING INFORMATION 2.5 30.0 MAX 6.0- 0.1 +0.0 2.50.1 0.50.1 12.5 MIN 2-2.5 2 3 1 PART NUMBER NDL5531P NDL5531PC NDL5531PD NDL5531P1 NDL5531P1C NDL5531P1D NDL5531P2 NDL5531P2C NDL5531P2D AVAILABLE CONNECTOR Without Connector With FC-PC Connector With SC-PC Connector Without Connector With FC-PC Connector With SC-PC Connector Without Connector With FC-PC Connector With SC-PC Connector DESCRIPTION No Flange Flat Mount Flange Vertical Flange 7.00.15 2.0 12.00.1 16.00.2 NDL5531P SERIES HANDLING PRECAUTION FOR PD/APD MODULE The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC recommends the following handling precautions: 1. Do not make the fiber bend radius less than 30 mm (*3). 2. Do not bend the fiber within the 18 mm section from the module body (*4). 3. Do not stress the ferrule with a lateral force exceeding 500 g (*5). fiber 30 mm MIN (*3) (*1) 18 mm MIN (*4) ferrule (*5) (*2) module body EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 9/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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