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MMST918 / PN918
Transistors
NPN High Frequency Transistor
MMST918 / PN918
Features 1) High current gain-bandwidth product fT=600MHz
External dimensions (Unit : mm)
MMST918
(1) 2.90.2 1.90.2 0.95 0.95 (2) 1.1+0.2 -0.1 0.80.1
1.6+0.2 -0.1
2.80.2
Package, marking, and packaging specifications
Part No. Packaging type Marking Code Basic ordering unit (pieces) MMST918 SMT3 RVX T146 3000 PN918 TO-92 - T93 3000
(3)
0 0.1
+0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions
PN918
4.80.2
4.80.2
3.70.2
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current MMST918 Collector power dissipation PN918 Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 30 15 3 50 0.2 0.310 150 -55 to +150
Unit V V V A W W C C
(12.7Min.)
Absolute maximum ratings (Ta = 25C)
ROHM : TO-92 EIAJ : SC-43
2.5Min.
0.50.1 (1) (2) (3) 5 2.5 +0.3 -0.1
0.3 0.6
ROHM : SMT3 EIAJ : SC-59
(1) Emitter (2) Base (3) Collector
+0.15 0.45 -0.05
2.3
(1) Emitter (2) Base (3) Collector
Electrical characteristics (Ta = 25C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Emitter input capacitance Noise figure Power gain Output power Collector efficiency
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) VBE(sat) fT Cob Cib NF Gpe Pout
Min. 30 15 3.0 - - 20 - - 600 - - - - 15 30 25
Typ. - - - - - - - - - - - - - - - -
Max. - - - 0.01 1.0 - 0.4 1.0 - 1.7 3.0 2.0 6.0 - - -
Unit V V V A A - V V MHz pF pF pF dB dB mW % IC=1.0A IC=3.0mA IE=10A VCB=15V VCB=15V , IE=0 , Ta=150C IC=3.0mA , VCE=1.0V IC/IB=10mA/1mA IC/IB=10mA/1mA
Conditions
IC=4.0mA , VCE=10V, f=100MHz VCB=10V , IE=0 , f=140kHz VCB=0 , IE=0 , f=140kHz VEB=0.5V , IC=0 , f=140kHz IC=1.0mA , VCE=6.0V ,RG=400 , f=60MHz VCB=12V , IC=6.0mA , f=200MHz VCB=15V , IC=8.0mA , f=500MHz VCB=15V , IC=8.0mA , f=500MHz
1/2
MMST918 / PN918
Transistors
Electrical characteristic curves
180A
COLLECTOR CURRENT : Ic (mA)
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)
20
Ta=25C
160A
140A
120A
100A
1000 500
Ta=25C VCE=10V
Ta=25C IC / IB=10
0.3
DC CURRENT GAIN : hFE
200 100 50
10
0.2
80A
60A
40A
20A
IB=0A 0 0 20 10 COLLECTOR-EMITTER VOLTAGE : VCE(V)
0.1
20 10 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA)
0 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA)
Fig.1 Typical output characteristics
Fig.2 DC current gain vs. collector current
Fig.3 Collector-emitter saturation voltage vs. collector current
BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
Ta=25C IC / IB=10
BASE EMITTER VOLTAGE : VBE(ON) (V)
1.8
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
Ta=25C VCE=10V
10 5
CAPACITANCE (pF)
Ta=25C f=1MHz
2
Cob
1 0.5
Cib
0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 50 100 REVERSE BIAS VOLTAGE : V (V)
0 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA)
0 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA)
Fig.4 Base-emitter saturation voltage vs. collector current
Fig.5 Base-emitter 'ON' voltage vs. collector current
Fig.6 Capacitance vs. reverse bias voltage
CURRENT GAIN BANDWIDTH PRODUCT (MHz)
5000
Ta=25C VCE=5V
2000 1000 500
200 100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA)
Fig.7 Current gain bandwidth product vs. collector current
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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