 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MITSUBISHI SEMICONDUCTOR MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTL INE D RA W ING Unit : millimeters 11.0 +/-0.3 ii iP.A.E.y24aeeTYP.)ii@f=14.0-14.5GHz APPLICATION For use in 14.0-14.5GHz band amplifiers 2MIN Internally impedance matched Flip-chip mounted High output power P1dB = 1.1W(TYP.) @f=14.0-14.5GHz High linear power gain GLP = 8.0dB(TYP.) i @f=14.0-14.5GHz High power added efficiency 2MIN FEATURES (1 ) 0.5 +/-0.15 (2 ) 6.5 +/-0.2 (2 ) (3 ) 6.2+/-0.2 9.2 +/-0.2 2.4 +/-0.4 RECOMMENDED BIAS CONDITIONS VDS =8 (V) ID =350 (mA) Refer to Bias Procedure 0.6 9.0 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C (Ta=25deg.C) Ratings -15 -15 1000 -3 5 11 175 -65 / +175 Unit V V GF -11 (1 ) G AT E (2 ) S O U R C E (F L AN G E ) (3 ) D R AIN < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. A A A W deg.C deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS VGS(off) gm P1dB GLP P.A.E. Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power at 1dB gain compression Linear power gain Power added efficiency (Ta=25deg.C) Test conditions VDS=3V,VGS=0V VDS=3V,ID=2mA VDS=3V,ID=350mA Min. -2 29.5 VDS=10V, ID(RF off)=350mA, f=14.0 - 14.5GHz 7.0 Delta Vf method Limits Typ. Max. 800 1000 300 31 8.0 24 -5 20 Unit mA V mS dBm dB % deg.C/W Rth (Ch-C) Thermal resistance *1 *1 : Channel to case MITSUBISHI ELECTRIC Jul-'05 1.3 +/-0.2 IG QUALITY GRADE 0.1 5.1 2R-0.9 MITSUBISHI SEMICONDUCTOR MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC Jul/'05 |
Price & Availability of MGFK30V404505
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |