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| LX5512B TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier PRODUCTION DATA SHEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current ICQ ~65mA Power Gain ~ 32 dB at 2.45GHz & Pout=19dBm Total Current ~140mA for Pout=19dBm at 2.45 GHz OFDM EVM ~3 % for 64QAM/ 54Mbps & Pout=19dBm Small Footprint: 3x3mm2 Low Profile: 0.9mm APPLICATIONS The LX5512B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a threestage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 32 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of LX5512B meets the requirements of high-gain power amplifiers for IEEE 802.11b/g applications. WWW .Microsemi .C OM IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO LQ Plastic MLPQ 16 pin LX5512BLQ Note: Available in Tape & Reel. Append the letters "TR" to the part number. (i.e. LX5512BLQTR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. Appropriate ESD procedures should be observed when handling this device. LX5512B LX5512B Copyright (c) 2004 Rev. 1.0, 2004-06-23 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5512B TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier PRODUCTION DATA SHEET ABSOLUTE MAXIMUM RATINGS DC Supply Voltage, RF off......................................................................................................7V Collector Current..............................................................................................................500mA Total Power Dissipation ......................................................................................................... 2W RF Input Power .................................................................................................................. 5dBm o Operation Ambient Temperature ............................................................................ -40 to +85 C o Storage Temperature............................................................................................ -60 to +150 C Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure)..........255C(+5, -0) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. PACKAGE PIN OUT WWW .Microsemi .C OM VC2 13 14 15 VC3 RF OUT RF OUT DET VC1 16 1 2 N/C N/C 12 11 10 9 8 7 6 5 N/C N/C RF IN N/C e3 4 THERMAL DATA LQ PACKAGE (Bottom View) LQ Plastic MLPQ 16-Pin 10C/W 50C/W Pb-free 100% Matte Tin Lead Finish THERMAL RESISTANCE-JUNCTION TO CASE, JC THERMAL RESISTANCE-JUNCTION TO AMBIENT, JA Junction Temperature Calculation: TJ = TA + (PD x JA). The JA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. FUNCTIONAL PIN DESCRIPTION Name RF IN VB12 VB3 VCC RF OUT VC1 VC2 VC3 REF DET GND Description RF input for the power amplifier. This pin is directly connected to base, a 10pF decoupling capacitor may be needed. Bias current control voltage for the first and second stage. Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage control voltage (VB12) into a single reference voltage (referred to as VREF) through an external resistor bridge. Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as VC). RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage. Power supply for first stage amplifier. The VC1 feed line should be terminated with a 10pF bypass capacitor, followed by a 36 Ohm resistor. This pin can be combined with VC2,VC3 and VCC pins, resulting in a single supply voltage (referred to as VC). Power supply for second stage amplifier. The VC2 feed line should be terminated with a 18pF bypass capacitor. This pin can be combined with VC1,VC3 and VCC pins, resulting in a single supply voltage (referred to as VC). Power supply for the third stage amplifier. The VC3 feed line should be terminated with 27 pF and 10 nF bypass capacitors. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred to as VC). Power detector reference output pin should be terminated with a 100K loading resistor Power detector output pin should be terminated with a 100K loading resistor The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. VB12 VCC REF VB3 PACKAGE DATA PACKAGE DATA Copyright (c) 2004 Rev. 1.0, 2004-06-23 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5512B TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier PRODUCTION DATA SHEET ELECTRICAL CHARACTERISTICS Test conditions: VC = 3.3V, VREF = 2.95V, ICQ = 65mA, TA = 25C Parameter Frequency Range Power Gain @ POUT = 19dBm EVM @ POUT = 19dBm Total Current @ POUT = 19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Total Current @ POUT = 23dBm nd 2 Side Lobe @ 23dBm Ramp-On Time Differential Detector Response WWW .Microsemi .C OM Symbol f Gp Test Conditions Min 2.4 LX5512B Typ Max 2.5 32 3.0 140 65 1.8 32 0.25 0.25 10 10 45 -40 -40 215 -55 Units GHz dB % mA mA mA dB dB dB dB dB dB dBc dBc mA dBc ns V 64QAM / 54Mbps IC_TOTAL ICQ IREF S21 S21 S21 S11 S22 S12 For ICQ = 65mA Over 100MHz 0 to +85C tON POUT = 19dBm POUT = 19dBm 11Mbps CCK 11Mbps CCK 10 ~ 90% 19dBm OFDM 100 1.4 Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink. ELECTRICALS ELECTRICALS Copyright (c) 2004 Rev. 1.0, 2004-06-23 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5512B TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier PRODUCTION DATA SHEET S-PARAMETER DATA 50 40 30 20 10 0 m3 m2 m1 Freq = 2.40GHz m1 = 32.02 m2 Freq = 2.50GHz m2 = 31.46 m3 Freq = 2.45GHz m3 = -9.31 EVM & SUPPLY CURRENT 7 6 Current 3.3V EVM PA ONLY 175 150 WWW .Microsemi .C OM dB(S(2,2)) dB(S(2,1)) m1 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 100 75 50 25 0 dB(S(1,1)) dB(S(1,2)) -10 -20 -30 -40 -50 0 1 2 3 4 5 6 7 Frequency (GHz) VC = 3.3V, VREF = 2.95V, ICQ = 65mA Output Power /[dBm] EVM and Supply Current with 54Mbps 64QAM VC = 3.3V, VREF = 2.95V, ICQ = 65mA, Frequency = 2.45GHz ACP & DIFF DETECTOR VOLTAGE -44 -46 -48 ACP 30MHz Diff DET Voltage CURRENT @ 11MBPS CCK 3.0 2.5 250 225 200 Current 3.3V Current /[mA] 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16 18 20 22 175 150 125 100 75 50 25 0 0 2 4 6 8 10 12 14 16 18 20 22 24 ACP /[dB] -50 -52 -54 -56 Output Power /[dBm] ACP (30MHz) & Differential Detector Voltage with 54Mbps 64QAM VC = 3.3V, VREF = 2.95V, ICQ = 65mA, Frequency = 2.45GHz Output Power /[dBm] VC = 3.3V, VREF = 2.95V, ICQ = 65mA, Frequency = 2.45GHz 23DBM OUTPUT @ 11MBPS CCK Current /[mA] EVM PA /[%] 5 125 CHARTS CHARTS VC = 3.3V, VREF = 2.95V, ICQ = 65mA, Frequency = 2.45GHz Copyright (c) 2004 Rev. 1.0, 2004-06-23 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5512B TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier PRODUCTION DATA SHEET PACKAGE DIMENSIONS WWW .Microsemi .C OM LQ 16-Pin MLPQ 3x3 (67x67 mil DAP) D b E D2 E2 e A1 A3 Dim A A1 A3 b D E e D2 E2 K L MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 K L A MECHANICALS MECHANICALS Copyright (c) 2004 Rev. 1.0, 2004-06-23 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5512B TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier PRODUCTION DATA SHEET NOTES WWW .Microsemi .C OM NOTES NOTES PRODUCTION DATA - Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright (c) 2004 Rev. 1.0, 2004-06-23 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 |
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