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| LESHAN RADIO COMPANY, LTD. Variable Capacitance Diode for VCXO HVC359 FEATURES * High capacitance ratio and good C-V linearity. * To be usable at low voltage. * Ultra small Flat Package (UFP) is suitable for surface mount design. 2 1 SOD- 523 1 CATHODE 2 ANODE DEVICE MARKING HVC359 = S ABSOLUTE MAXIMUM RATINGS (TA = 25C) Item Reversevoltage Junction temperature Storage temperature ELECTRICAL CHARACTERISTICS (TA = 25C) Item Reverse current Capacitance Capacitance ratio Series resistance ESD-Capability*1 Symbol IR1 IR2 C1 C4 n rs - Min - - 24.8 6.0 3.0 - 80 Typ - - - - - - - Max 10 100 29.8 8.3 - 1.5 - Unit nA pF - V Test Condition VR = 10V VR = 10V, TA = 60C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1/ C4 VR = 4V, f = 100 MHz C =200pF , Both forward and reverse direction 1 pulse. Symbol VR Tj Tstg Value 15 125 - 55 to +125 Unit V C C Notes 1. Failure criterion ; IR 20nA at VR =10 V HVC359-1/2 LESHAN RADIO COMPANY, LTD. HVC359 I R , REVERSE CURRENT (A) Reverse voltage VR (V) Fig.1 Reverse current Vs. Reverse voltage C , CAPACITANCE (pF) Reverse voltage VR (V) Fig.2 Capacitance Vs. Reverse voltage HVC359-2/2 |
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