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| FDMS2572 N-Channel UltraFET Trench(R) MOSFET February 2007 FDMS2572 N-Channel UltraFET Trench(R) MOSFET 150V, 27A, 47m Features General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Max rDS(on) = 47m at VGS = 10V, ID = 4.5A Max rDS(on) = 53m at VGS = 6V, ID = 4.5A Low Miller Charge Optimized efficiency at high frequencies UIS Capability (Single pulse and Repetitive pulse) RoHS Compliant tm Application Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Pin 1 S S S G D D D D D D D 5 6 7 8 4G 3S 2S 1S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 150 20 27 27 4.5 30 78 2.5 -55 to +150 W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 C/W Package Marking and Ordering Information Device Marking FDMS2572 Device FDMS2572 Package Power 56 Reel Size 13'' Tape Width 12mm Quantity 3000 units (c)2007 Fairchild Semiconductor Corporation FDMS2572 Rev.C2 1 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 120V, VGS = 0V VGS = 20V, VDS = 0V 150 180 1 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 4.5A VGS = 6V, ID = 4.5A VGS = 10V, ID = 4.5A, TJ = 125C VDS = 10V, ID = 4.5A 2 3 -9.8 36 39 69 14 47 53 103 S m 4 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 75V, VGS = 0V, f = 1MHz f = 1MHz 1960 130 30 1.3 2610 175 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VDD = 75V ID = 4.5A VDD = 75V, ID = 1.0A VGS = 10V, RGEN = 6 11 8 38 31 31 9 7 20 16 61 50 43 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) 0.7 67 130 1.0 101 195 V ns nC IF = 4.5A, di/dt = 100A/s Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a.50C/W when mounted on a 1 in2 pad of 2 oz copper b. 125C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMS2572 Rev.C2 2 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 35 ID, DRAIN CURRENT (A) VGS = 10V VGS = 6V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = 5.5V VGS = 5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 1.8 1.6 1.4 1.2 1.0 0.8 VGS = 6V VGS =4.5V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS =5V VGS =5.5V 30 25 20 15 10 5 0 0 VGS = 10V VGS = 4.5V 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 8 16 24 ID, DRAIN CURRENT(A) 32 40 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 110 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 4.5A VGS = 10V 100 90 80 70 60 50 40 30 3 ID = 4.5A PULSE DURATION =300s DUTY CYCLE = 2.0%MAX TJ = 150oC TJ = 25oC 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On - Resistance vs Junction Temperature 60 50 ID, DRAIN CURRENT (A) 40 30 20 TJ = 25oC TJ = 125oC PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX Figure 4. On-Resistance vs Gate to Source Voltage 60 IS, REVERSE DRAIN CURRENT (A) 10 1 0.1 0.01 VGS = 0V TJ = 125oC TJ = 25oC 10 TJ =-55oC 1E-3 1E-4 0.0 TJ = -55oC 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS2572 Rev.C2 3 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 4.5A 3000 VDD =50V 8 6 4 2 0 1000 VDD = 75V Ciss VDD = 100V CAPACITANCE (pF) 100 Coss 0 7 14 21 Qg, GATE CHARGE(nC) 28 35 10 0.1 f = 1MHz VGS = 0V Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 6 5 ID, DRAIN CURRENT (A) 6 IAS, AVALANCHE CURRENT(A) 5 4 3 TJ = 25oC VGS = 10V 4 3 VGS = 6V 2 TJ = 125oC 2 1 0 25 RJA = 50 C/W o 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 50 50 75 100 125 TA, AMBIENT TEMPERATURE (oC) 150 Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 2000 1000 60 100us ID, DRAIN CURRENT (A) 10 1 0.1 0.01 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1ms 10ms 100ms 1s SINGLE PULSE TJ = MAX RATED TA = 25OC 100 I = I25 150 - T A ---------------------125 TA = 25oC 10 10s DC 1E-3 0.1 1 10 100 600 1 0.5 -3 10 SINGLE PULSE -2 -1 0 1 2 3 10 10 10 10 10 10 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMS2572 Rev.C2 4 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 5E-4 -3 10 SINGLE PULSE 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS2572 Rev.C2 5 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench(R) MOSFET FDMS2572 Rev.C2 6 www.fairchildsemi.com FDMS2572 N-Channel UItraFET Trench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I22 FDMS2572 Rev. C2 7 www.fairchildsemi.com |
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