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| SHINDENGEN Schottky Rectifiers (SBD) Single D2S4M 40V 2A FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe 0.8O lead APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : AX078 Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -40*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage VRM 40 Repetitive Peak Surge Reverse VoltagePulse width 0.5ms, duty 1/40 V RRSM 45 Average Rectified Forward Current 50Hz sine wave, R-load Ta=36*Z IO 1.5 50Hz sine wave, R-load Tl=122*Z 2 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 60 Repetitive Peak Surge Reverse Power Pulse width 10Es, Tj=25*Z PRRSM 160 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF =2A, Pulse measurement Reverse Current IR V=V , R RM Pulse measurement Junction Capacitance =10V Cj f=1MHz,R V Thermal Resistance AEjl junction to lead AEja junction to ambient Unit *Z *Z V V A A W Ratings Unit Max.0.55 V Max.2 mA Typ.95 pF Max.17 *Z/W Max.105 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D2S4M Forward Voltage 10 Forward Current IF [A] 1 Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage VF [V] D2S4M Junction Capacitance f=1MHz Tl=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] D2S4M 1000 Reverse Current 100 Tl=150C [MAX] Reverse Current IR [mA] Tl=150C [TYP] 10 Tl=125C [TYP] Tl=100C [TYP] 1 Tl=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] D2S4M 4 3.5 Reverse Power Dissipation Reverse Power Dissipation PR [W] DC D=0.05 0.1 0.2 3 2.5 2 0.3 0.5 1.5 1 0.5 0 SIN 0.8 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D2S4M 2 Forward Power Dissipation Forward Power Dissipation PF [W] DC D=0.8 1.5 0.2 0.05 1 0.1 0.3 SIN 0.5 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D2S4M 3 Derating Curve Average Rectified Forward Current IO [A] 2.5 DC D=0.8 2 0.5 1.5 SIN 0.3 0.2 0.1 0.5 0.05 0 1 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T D2S4M 4 Derating Curve Average Rectified Forward Current IO [A] 3.5 DC 3 2.5 0.5 2 1.5 1 0.5 0 SIN 0.3 0.2 0.1 0.05 D=0.8 0 20 40 60 80 100 120 140 160 Lead Temperature Tl [C] VR = 20V IO 0 0 VR tp D=tp /T T D2S4M 100 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 80 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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