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| CGY 98 GaAs MMIC l l l l l l Broadband Power Amplifier [ 800..2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V Pout = 35.0dBm at Vd=3.5V Overall power added efficiency 55 % Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY98 t.b.d. t.b.d. SCT595 Maximum ratings Characteristics Positive supply voltage Supply current stage 1 Supply current stage 2 Channel temperature Storage temperature Total power dissipation (Ts < 81 C) Symbol VD max. Value 6 0.6 1.8 150 -55...+150 2.0 Unit V A A C C W ID ID TCh Tstg Ptot PPulse Ts: Temperature at soldering point Pulse peak power 4.0 W Thermal Resistance Characteristics Channel-soldering point Symbol max. Value 35 Unit K/W RthChS Siemens Aktiengesellschaft Semiconductor Group 1 1 12.03.1998 1998-11-01 HL HFD PE GaAs CGY 98 Functional Block Diagram (3) VD1 (1) RFin/Vg (4) RFout / VD2 (2,5) GND (2,5) GND Pin # 1 2 3 4 5 RFin/VG GND VD1 Configuration RF input power + Gate voltage RF and DC ground Pos. drain voltage 1st stage RFout/VD2 RF output power / Pos. drain voltage 2nd stage GND RF and DC ground GSM-Operation Siemens Aktiengesellschaft Semiconductor Group 2 2 12.03.1998 1998-11-01 HL HFD PE GaAs CGY 98 Electrical characteristics [Inside Application: PCB-Layout t.b.d.] (TA = 25C, ZS=ZL=50 Ohm, duty cycle 12.5%, ton=577us unless otherwise specified) Characteristics Frequenzy range Supply current VD=3.5V; Pin = +12 dBm Power Gain VD=3.5V; Pin = +12 dBm Output Power VD=3.5V; Pin = +12 dBm Overall Power added Efficiency VD=3.5V; Pin = +12 dBm Harmonics 2f0 3f0 Input VSWR VD=3.5V or Vd=4.8V Load mismatch Pin=10dBm , VD4.6V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Stability Pin=10dBm, VD=4.6V, ZS=50 Ohm, Load VSWR = 3:1 for all phase Symbol min 880 - typ 1.6 23 35.0 55 max 915 - Unit MHz A dB dBm f IDD G Po PAE - - % dBc - -42 -42 2:1 No module damage for 10 sec. - All spurious output more than 70 dB below desired signal level Siemens Aktiengesellschaft Semiconductor Group 3 3 12.03.1998 1998-11-01 HL HFD PE GaAs CGY 98 PCN(DCS1800)-Operation Electrical characteristics [Inside Application: PCB-Layout t.b.d.] (TA = 25C, ZS=ZL=50 Ohm, duty cycle 12.5%, ton=577us unless otherwise specified) Characteristics Frequenzy range Supply current VD=3.5V; Pin = +15 dBm Power Gain VD=3.5V; Pin = +15 dBm Output Power VD=3.5V; Pin = +15 dBm Overall Power added Efficiency VD=3.5V; Pin = +15 dBm Harmonics 2f0 3f0 Input VSWR VD=3.5V or Vd=4.8V Load mismatch Pin=10dBm , VD4.6V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Stability Pin=10dBm, VD=4.6V, ZS=50 Ohm, Load VSWR = 3:1 for all phase Symbol min 1710 - typ max 1785 - Unit MHz A dB dBm f IDD G Po PAE - 1.6 19 34.0 45 - % dBc - -42 -42 2:1 No module damage for 10 sec. - All spurious output more than 70 dB below desired signal level Siemens Aktiengesellschaft Semiconductor Group 4 4 12.03.1998 1998-11-01 HL HFD PE GaAs CGY 98 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstrae 73, D-81541 Munchen. copyright Siemens AG 1996. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 5 5 12.03.1998 1998-11-01 HL HFD PE GaAs |
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