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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2004.07.02 Page No. : 1/4
BTB1412J3
Features
* Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A * Excellent DC current gain characteristics * Complementary to BTD2118J3
Symbol
BTB1412J3
Outline
TO-252
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25) Pd(TC=25) Tj Tstg
Limits -20 -15 -6 -5 -10 1 10 150 -55~+150
Unit V V V *1 A W C C
BTB1412J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -20 -15 -6 120 Typ. 120 60 Max. -0.5 -0.5 -1.0 560 Unit V V V A A V MHz pF
Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2004.07.02 Page No. : 2/4
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-15V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IC=-50mA, f=30MHz VCB=-20V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE
Rank Range Q 120~270 R 180~390 S 270~560
BTB1412J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---VCE(SAT)(mV) 1000
Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2004.07.02 Page No. : 3/4
Saturation Voltage vs Collector Current
VCE=5V Current Gain---HFE
100 IC=40IB 10 IC=20IB IC=10IB 1 1 10 100 1000 10000
100
VCE=2V VCE=1V
10 1 10 100 1000 10000 Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000 Saturation Voltage---VBE(SAT)(mV)
12 10 8 6 4 2
Power Derating Curve
IC=10IB 1000
Power Dissipation---PD(W)
100 1 10 100 1000 10000
0 0 50 100 150 200
Collector Current---IC(mA)
Case Temperature---TC( )
Power Derating Curve
1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA( )
BTB1412J3
CYStek Product Specification
CYStech Electronics Corp.
TO-252 Dimension
A C
Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2004.07.02 Page No. : 4/4
Marking:
B L F G
D
B1412
3 H E K 2 I 1 J
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283
Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80
DIM G H I J K L
Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630
Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1412J3
CYStek Product Specification

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