View APTC60AM18SCG_1212035.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTC60AM18SCG
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
VBUS
VDSS = 600V RDSon = 18m max @ Tj = 25C ID = 143A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
Q1 G1 OUT S1
Q2 G2 0/VBUS
S2
*
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Max ratings 600 143 107 572 30 18 833 20 1 1800 Unit V A V m W A mJ
* *
G1 S1 VBUS 0/VBUS OUT
*
S2 G2
Benefits
* * * * *
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-7
APTC60AM18SCG - Rev 2
July, 2006
APTC60AM18SCG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 71.5A VGS = VDS, ID = 4mA VGS = 20 V, VDS = 0V
3
Max 100 1000 18 3.9 200
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 143A Inductive switching @ 125C VGS = 15V VBus = 400V ID = 143A R G = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2
Min
Typ 28 10.2 0.85 1036 116 444 21 30 283 84 1608 3920 2630 4824
Max
Unit nF
nC
ns
J
J
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/s Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 350 600
Unit V A A
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
31 60 120 500
ns nC
www.microsemi.com
2-7
APTC60AM18SCG - Rev 2
July, 2006
Tj = 125C
120 1.1 1.4 0.9
1.15 V
APTC60AM18SCG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 80A Test Conditions VR=600V Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C Min 600 Typ 400 800 80 1.6 2.0 112 520 400 Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2 Typ Max 0.15 0.46 0.35 150 125 100 5 3.5 280 Max 1600 8000 1.8 2.4 Unit V A A V nC pF
IF = 80A, VR = 300V di/dt =2000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-7
APTC60AM18SCG - Rev 2
July, 2006
APTC60AM18SCG
Typical CoolMOS Performance Curve
0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 800 700 ID, Drain Current (A) 600 500 400 300 200 100 0 0
5V 4.5V 4V 6.5V 6V 5.5V
Transfert Characteristics 540 I D, Drain Current (A)
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
VGS=15&10V
450 360 270 180 90 0
TJ=125C TJ=25C T J=-55C
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
25
0
1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 240 I D, Drain Current (A) I D, DC Drain Current (A)
Normalized to VGS =10V @ 71.5A V GS=10V
DC Drain Current vs Case Temperature 160 140 120 100 80 60 40 20 0 25
July, 2006 4-7 APTC60AM18SCG - Rev 2
V GS=20V
50 75 100 125 TC, Case Temperature (C)
150
www.microsemi.com
APTC60AM18SCG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 143A
Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1000
I D, Drain Current (A)
limited by RDSon
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
100
100s
1 ms
10
Single pulse TJ =150C TC=25C 1 10 100
10 ms
1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000
Ciss
14 12 10 8 6 4 2 0 0 200 400 600 800 Gate Charge (nC) 1000 1200
July, 2006
C, Capacitance (pF)
10000
Coss
ID=143A TJ=25C
VDS=120V V DS=300V VDS=480V
1000
Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
www.microsemi.com
5-7
APTC60AM18SCG - Rev 2
APTC60AM18SCG
350 300
td(on) and td(off) (ns)
Delay Times vs Current 120
td(off)
Rise and Fall times vs Current
VDS=400V RG=1.2 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy vs Current 10 9 8 7 6 5 4 3 2 1 0 0
VDS=400V RG=1.2 TJ=125C L=100H td(on) VDS=400V RG=1.2 TJ=125C L=100H
tf
80 60 40
tr
20 0 0 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy vs Gate Resistance 20
Switching Energy (mJ)
V DS =400V ID=143A T J=125C L=100H
Switching Energy (mJ)
E off
15 10 5 0
Eoff
Eon
E on
40
80 120 160 200 ID, Drain Current (A)
240
0
2.5 5 7.5 10 Gate Resistance (Ohms)
12.5
Operating Frequency vs Drain Current 160 140
Frequency (kHz)
I DR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage 1000
T J=150C
120 100 80 60 40 20 0 30
ZCS
100
TJ=25C
ZVS VDS=400V D=50% RG=1.2 T J=125C T C=75C
Hard switching
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
July, 2006
50 70 90 110 ID, Drain Current (A)
130
www.microsemi.com
6-7
APTC60AM18SCG - Rev 2
APTC60AM18SCG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics
160
I F Forward Current (A)
TJ=25C
IR Reverse Current (A)
1600 1400 1200 1000 800 600 400 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25C TJ =125C TJ =75C TJ =175C
120 80 40 0 0 0.5
TJ =75C
TJ=175C TJ =125C
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
3000 C, Capacitance (pF) 2500 2000 1500 1000 500 0
July, 2006 APTC60AM18SCG - Rev 2
1
10 100 VR Reverse Voltage
1000
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
7-7

▲Up To Search▲

Price & Availability of APTC60AM18SCG

	To Download APTC60AM18SCG Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .