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| AP20N03H/J Advanced Power Electronics Corp. Low Gate Charge Simple Drive Requirement Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 52m 20A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20N03J) is available for low-profile applications. G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 20 13 53 31 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 110 Unit /W /W Data & specifications subject to change without notice 200227032 AP20N03H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 Max. Units 52 85 3 1 25 100 V V/ m m V uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=8A 6.1 1.4 4 4.9 29 14.3 3.6 290 160 45 VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= 20V ID=10A VDS= 24V VGS=5V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 20 53 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=20A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP20N03H/J 60 40 T C =25 C 50 o V G =10V V G =8.0V T C =150 o C V G =10V V G =8.0V 30 ID , Drain Current (A) 40 ID , Drain Current (A) V G =6.0V 30 V G =6.0V 20 20 V G =4.0V 10 V G =4.0V 10 V G =3.0V V G =3.0V 0 0 1 2 3 4 5 6 7 8 0 0 1 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 85 1.8 80 I D = 1 0A T C =25 o C 1.6 I D =10A V G =10V 75 70 1.4 RDS(ON) (m ) 65 Normalized R DS(ON) 60 1.2 55 1 50 45 0.8 40 0.6 3 4 5 6 7 8 9 10 11 -50 0 50 100 150 35 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP20N03H/J 30 40 25 30 ID , Drain Current (A) 20 15 PD (W) 25 50 75 100 125 150 20 10 10 5 0 0 0 50 100 150 T c , Case Temperature ( o C) T c ,Case Temperature ( C) o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 DUTY=0.5 10us Normalized Thermal Response (R thjc) 0.2 ID (A) 10 100us 1ms 10ms T c =25 o C Single Pulse 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 PDM t T 100ms 0.01 0.00001 0.0001 0.001 0.01 Duty factor = t/T Peak Tj = P DM x Rthjc + TC 1 1 10 100 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP20N03H/J 12 1000 f=1.0MHz I D =10A 10 VGS , Gate to Source Voltage (V) V DS =16V 8 Ciss V DS =20V V DS =24V C (pF) Coss 100 6 Crss 4 2 0 0 2 4 6 8 10 12 10 1 6 11 16 21 26 31 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 T j = 150 o C IS (A) 2 T j = 25 o C VGS(th) (V) 1 0 -50 1 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 V SD (V) T j , Junction Temperature( o C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP20N03H/J RD VDS 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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