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AM1214-300
.REFRACTORY/ .EMI .5: .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 270 W MIN. WITH 6.3 dB GAIN
.400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-300 BRANDING 1214-300
PIN CONNECTION
The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-300 is supplied in the BIGPACTM Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
730 18.75 55 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.24 C/W
*Applies only to rated RF amplifier operation
September 1992
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AM1214-300
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
BVCBO BVEBO BVCES ICES hFE
IC = 50mA IE = 15mA IC = 50mA VCE = 50V VCE = 5V
IE = 0mA IC = 0mA
65 3.0 65 --
-- -- -- -- --
-- -- -- 30 --
V V V mA --
IC = 5A
10
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT c GP
Note:
f = 1235 -- 1365MHz f = 1235 -- 1365MHz f = 1235 -- 1365MHz = =
50Sec 4%
PIN = 63W PIN = 63W PIN = 63W
VCC = 50V VCC = 50V VCC = 50V
270 40 6.3
300 45 6.8
-- -- --
W % dB
Pul se Widt h Duty Cycle
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AM1214-300
TYPICAL PERFORMANCE
TYPICAL BROADBAND POWER AMPLIFIER
RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & PULSE CYCLE
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AM1214-300
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
ZIN
PIN = 63 W VCC = 50 V Z 0* = 50 ohms
FREQ. L = 1235 MHz M = 1300 MHz H = 1365 MHz
ZIN () 2.5 + j 5.0 1.5 + j 3.5 1.0 + j 3.5
ZCL () 2.0 - j 2.5 2.5 - j 2.5 2.0 - j 3.0
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
PIN = 63 W VCC = 50 V Z0* = 50 ohms
*Normalized Impedance
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AM1214-300
TEST CIRCUIT Ref.: Dwg. No. C125510
PACKAGE MECHANICAL DATA
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AM1214-300
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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