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| 6R1MBI100P-160 Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Diode Module Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current One cycle surge current I2t Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VRRM VRSM IO IFSM I2t Tj VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Operation junction temperature Storage junction temperature Isolation voltage Mounting screw torque PC VRRM Tj Tstg Viso 50Hz/60Hz sine wave Tc=110C From rated load From rated load Condition Rating 1600 1760 100 1000 4000 -40 to +125 1400 20 75 50 150 100 360 1400 +150 -40 to +125 2500 2.0 to 2.5 Unit V V A A A 2s C V V A A W V C C V N*m Converte DC 1ms 1 device Tc=25C Tc=75C Tc=25C Tc=75C Brake AC : 1 minute M5 screw Electrical characteristics (Tj=25C unless otherwise specified) Item Fofward voltage Reverse current Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Turn-off time Reverse current Co. Symbol VFM IRRM ICES IGES VCE(sat) ton tr toff tf IRRM Condition Tj=25C, IFM=100A Tj=150C, VR=VRRM VGE=0V. VCE=1400V VCE=0V. VGE=20V VGE=15V. IC=50A Vcc=800V Ic=50A VGE=15V RG=25ohm Min. Typ. 2.4 0.35 0.25 0.45 0.08 Max. 1.30 20 1.0 200 2.8 1.2 0.6 1.0 0.3 1.0 Unit V mA mA nA V s Brake mA Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Condition Per total loss Per each device Brake IGBT (1 device) with thermal compound Converter Min. Typ. Max. 0.14 0.84 0.55 0.08 Unit C/W Thermal Resistance(Case to fine) Rth(c-f) C/W Diode Module Forward Characteristics 300 6R1MBI100P-160 O u tp u t C u r r e n t - T o ta l L o s s 100 90 Forw ard Current V F(V ) 80 70 60 50 40 max 250 typ 200 150deg Total Loss (W) 150 25deg 30 20 100 50 10 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 0 50 100 150 O u tp i t C u r r e n t Io ( A ) Forward Current IF(A) O u tp u t C u r r e n t - C a s e T e m p e r a tu r e 1200 130 S u r g e C u rr e n t 120 1000 Case Tempreture Tc (deg.C) 110 Peak Surge Current IFSM (A) 800 100 90 600 80 400 70 200 60 50 0 50 100 0 0 .0 1 0 .1 1 O u t p u t C u r r e n t Io ( A ) T im Tra ns ie nt The rm a l Im p e d a nce 1 10 [ B ra ke ] Tra nsie nt The rm a l Im p e d a nc e FW D Zth(j-c)(t) (deg.C/W) 0.1 1 Zth(j-c)(deg.C/w) IG BT 0 .1 0.01 0.00 1 0.00 1 0.01 0.1 1 10 0 .0 1 0 .0 0 1 0 .0 1 0 .1 1 10 Tim e T im e (s e c ) Diode Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 120 120 6R1MBI100P-160 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 100 VGE= 20V 15V 12V 100 VGE= 20V 15V 12V Collector current : Ic [ A ] 80 10V 60 Collector current : Ic [ A ] 80 10V 60 40 40 20 8V 0 0 1 2 3 4 5 20 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 120 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Tj= 25C 100 Tj= 125C 80 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 60 4 Ic= 100A Ic= 50A Ic= 25A 40 2 20 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 600 15 1000 Coes 400 10 Cres 200 5 100 0 5 10 15 20 25 30 35 0 0 100 200 300 400 0 500 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] Diode Module Outline Drawings, mm 6R1MBI100P-160 90 78.5 4- O 6.1 C3 2- O5.5 11.75 7 14 7 0.5 21 7 + 23.5 16 - G E C 11 K 11.75 O 2.5 14 14 28.5 11 32 3 6 1.5 3.4 JAPAN O 2.1 2 x t1 R1 6R1MBI100P-160 Equivalent Circuit Schematic K C G E 13 17 20.4 |
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