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DATA SHEET SILICON POWER TRANSISTOR 2SC4336 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SC4336 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power 17 0.2 PACKAGE DRAWING (Unit: mm) 10.5 MAX. 7 0.2 4.7 MAX. 3.2 0.2 5 0.1 3.0 MAX. 2.8 0.2 5 0.2 supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. FEATURES * Mold package that does not require an insulating board or insulation bushing * Fast switching speed * Low collector-to-emitter saturation voltage VCE(sat) 0.3 V MAX. (IC = 6.0 A) 0.8 0.1 2.54 TYP. 1.3 0.2 1.5 0.2 2.54 TYP. 13.5 MIN. 12 0.2 0.5 0.1 2.5 0.1 ORDERING INFORMATION PART NUMBER 2SC4336 PACKAGE Isolated TO-220 (MP-45) 123 1: Base 2: Collector 3: Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25C) Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation (TC = 25C) Total power dissipation (TA = 25C) Junction temperature Storage temperature Note VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT PT Tj Tstg 100 100 7.0 10 20 6.0 30 2.0 150 -55 to +150 V V V A A A W W C C Note PW 300 s, Duty Cycle 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17261EJ1V0DS00 (1st edition) Date Published July 2004 NS CP(K) Printed in Japan 2004 2SC4336 ELECTRICAL CHARACTERISTICS (TA = 25C) Parameter Collector to Emitter Voltage Symbol VCEO(SUS) VCEX(SUS) Collector Cut-off Current ICBO ICER ICEX1 ICEX2 Emitter Cut-off Current DC Current Gain Note Conditions IC = 5.0 A, IB = 0.6 A, L = 1 mH IC = 5.0 A, IB1 = -IB2 = 0.6 A, VBE(OFF) = -1.5 V, L = 180 H, clamped VCB = 100 V, IE = 0 VCE = 100 V, RBE = 50 , TA = 125C VCE = 100 V, VBE(OFF) = -1.5 V VCE = 100 V, VBE(OFF) = -1.5 V, TA = 125C VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 1.0 A VCE = 2.0 V, IC = 2.0 A VCE = 2.0 V, IC = 6.0 A IC = 6.0 A, IB = 0.3 A IC = 8.0 A, IB = 0.4 A IC = 6.0 A, IB = 0.3 A IC = 8.0 A, IB = 0.4 A VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 0.5 A IC = 6.0 A, RL = 8.3 , IB1 = -IB2 = 0.3 A, VCC 50 V Refer to the test circuit. MIN. 100 100 TYP. MAX. Unit V V 10 1.0 10 1.0 10 100 100 60 0.3 0.5 1.2 1.5 120 150 0.3 1.5 0.3 200 400 A mA A mA IEBO hFE1 hFE2 hFE3 A Collector Saturation Voltage Note VCE(sat)1 VCE(sat)2 V V V V pF MHz Base Saturation Voltage Note VBE(sat)1 VBE(sat)2 Collector Capacitance Gain Bandwidth Product Turn-on Time Storage Time Fall Time Cob fT ton tstg tf s s s Note Pulsed: PW 350 s, Duty Cycle 2% hFE CLASSIFICATION Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT RL = 8.3 VIN IB1 IB2 PW PW 50 s Duty Cycle 2% VBB -5 V ton tstg tf T.U.T. VCC 50 V Collector current waveform 90% IC Base current waveform IB2 IB1 IC 10% 2 Data Sheet D17261EJ1V0DS 2SC4336 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 30 DERATING CURVE OF SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C PT - Total Power Dissipation - W 25 20 15 10 5 0 0 25 50 75 100 125 150 175 S/b Limited Dissipation Limited TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 IC(pulse) IC - Collector Current - A 1 ms 200 ms 10 ms 10 IC(DC) 1 DC Dissipation Limited 0.1 Single pulse TC = 25C 0.01 0.1 1 10 100 1000 VCE - Collector to Emittor Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(j-c) - Transient Thermal Resistance - C/W 1000 100 Rth(ch-A) = 62.5C/W 10 Rth(ch-C) = 4.17C/W 1 Single pulse 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D17261EJ1V0DS 3 2SC4336 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 12 100 mA 10 IC - Collector Current - A hFE - DC Current Gain 50 mA 8 30 mA 6 20 mA 4 IB = 10 mA 2 0 0 0.5 1 1.5 2 2.5 3 3.5 VCE - Collector to Emittor Voltage - V 100 1000 DC CURRENT GAIN vs. COLLECTOR CURRENT 10 VCE = 2.0 V Pulsed 1 0.001 0.01 0.1 1 10 100 IC - Collector Current - A COLLECTOR SATURATION VOLTAGE AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 10000 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1000 VCE - Collector Saturation Voltage - mV VBE - Base Saturation Voltage - mV 1000 VBE(sat) fT - Gain Bandwidth Product - MHz 100 VCE(sat) 10 IC = 10 * IB Pulsed 1 0.01 0.1 1 10 100 100 VCE = 10 V 10 0.01 0.1 1 10 IC - Collector Current - A COLLECTOR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1000 IC - Collector Current - A TURN ON TIME, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT 10000 tstg 1000 tf ton Cob - Collector Capacitance - pF IE = 0 f = 1 MHz 100 tf, tstg, ton - Fall Time, Turn-on Time and Storage Time - ns 100 10 1 10 100 IC = 20 A IB1 = -20 * IB2 10 0.1 1 10 100 VCB - Collector to Base Voltage - V IC - Collector Current - A 4 Data Sheet D17261EJ1V0DS 2SC4336 * The information in this document is current as of July, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. 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To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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