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  Datasheet File OCR Text:
 SHINDENGEN
Switching Power Transistor
HFX Series
2SC4233
(T3V80HFX)
3A NPN
OUTLINE DIMENSIONS
Case : TO-220 Unit : mm
RATINGS
*oeAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Mounting Torque *oeElectrical Characteristics (Tc=25*Z) Item Collector to Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Thermal Resistance Transition Frequency Turn on Time Storage Time Fall Time Symbol Tstg Tj VCBO V CEO V EBO IC I CP IB IBP PT TOR Conditions Ratings -55*150 150 1200 800 7 3 6 1 2 60 0.5 Unit *Z *Z V V V A A W Nm
Tc = 25*Z (Recommended torque : 0.3Nm)
Symbol VCEO (sus) I CBO I CEO IEBO h FE h FEL V CE (sat) VBE (sat) AEjc fT ton ts tf
Conditions IC = 0.1A At rated Voltage At rated Voltage VCE 5V, IC = 1.5A = VCE 5V, IC = 1mA = IC = 1.5A IB = 0.3A Junction to case VCE 10V, IC= 0.3A = IC = 1.5A IB1= 0.3A, IB2= 0.6A RL= 170, V BB2 4V =
Ratings Min 800 Max 0.1 Max 0.1 Max 0.1 Min 8 Min 7 Max 1.0 Max 1.5 Max 2.08 TYP 8 Max 0.5 Max 3.5 Max 0.3
Unit V mA mA
V V *Z/W MHz Es
2SC4233
hFE - I C
VCE = 5V
100
Tc = 150C
100C
50C
25C
10
0C
-25C
DC Current Gain hFE
-55C
1 0.001 0.01
0.1
1
6
Collector Current IC [A]
2SC4233
Saturation Voltage
3 0.75A 1.5A 3.0A 4.5A 2.5
3
IC = 0.3A
2.5
2
2
1.5 4.5A 3.0A
1.5
1 0.75A 1.5A
Collector-Emitter Voltage VCE [V]
0.5
IC = 0.3A
0.5
Tc = 25C 0 0.1 1 2
0 0.01
Base Current IB [A]
Base-Emitter Voltage VBE [V]
1
2SC4233
10
Switching Time - IC
ts
1
Switching Time tSW [s]
ton
0.1
tf
IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 250V Tc = 25C 0.01 0 0.5 1 1.5 2 2.5 3
Collector Current IC [A]
2SC4233
10
Switching Time - VCC
ts
1
ton
Switching Time tSW [s]
tf
0.1
IC = 1.5A IB1 = 0.3A IB2 = 0.6A VBB2 = 4V Tc = 25C 0.01 0 50 100 150 200 250 300
Collector Voltage VCC [V]
2SC4233
10
Switching Time - Tc
ts
1
Switching Time tSW [s]
ton
tf
0.1
IC = 1.5A IB1 = 0.3A IB2 = 0.6A VBB2 = 4V R L = 167 0.01 0 50 100 150
Case Temperature Tc [C]
2SC4233
10
L-Load Switching Time - IC
ts
1
Switching Time tSW [s]
tf + tvs 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25C 0.01 0 0.5 1 1.5 2 2.5 3
Collector Current IC [A]
2SC4233
10
L-Load Switching Time - IC (At High Temperature)
ts
1
Switching Time tSW [s]
tf + tvs
0.1
tf
IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100C 0.01 0 0.5 1 1.5 2 2.5 3
Collector Current IC [A]
2SC4233
Transient Thermal Impedance
10
1
0.1
Transient Thermal Impedance jc(t) [C/W]
0.01
0.001 10-3 10-2
10-4
10-1
100
101
Time t [s]
2SC4233
6 10ms
Forward Bias SOA
1ms 150s 50s
DC
PT limit 1
Collector Current IC [A]
IS/B limit
0.1
Tc = 25C Single Pulse 0.01 1 10 100 800
Collector-Emitter Voltage VCE [V]
2SC4233
100
Collector Current Derating
Collector Current Derating [%]
80
IS/B limit
60
40
PT limit
20
VCE = fixed 0 0 50 100 150
Case Temperature Tc [C]
2SC4233
6 IB1 = 0.25IC IB2 = 0.45A VBB2 = 5V Tc < 150C
Reverse Bias SOA
5
4
Collector Current IC [A]
3
2
1
0
0
200
400
600
800
1000
1200
Collector-Emitter Voltage VCE [V]


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