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| (R) 2N2102 EPITAXIAL PLANAR NPN s GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signall and medium power applications in military and industrial equipments. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CER V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE 10) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb 25 o C o at T C 25 C Storage Temperature Max. Operating Junction Temperature Value 120 65 80 7 1 1 5 -65 to 175 175 Unit V V V V A W W o o C C December 2002 1/4 2N2102 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 30 150 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 60 V V CB = 60 V V EB = 5 V I C = 100 A 120 T C = 150 o C Min. Typ. Max. 2 2 5 Unit nA A nA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 30 mA 65 V I C = 150 mA I C = 150 mA IC IC IC IC IC IC = = = = = = 10 A 100 A 10 mA 150 mA 500 mA 1A I B = 15 mA I B = 15 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V VCE = 10 V f = 1 KHz R g = 510 f = 1MHz f = 1MHz 10 20 35 40 25 10 6 0.5 1.1 V V 120 h fe NF C CBO C EBO High Frequency Current Gain Noise Figure Collector-Base Capacitance I C = 50 mA f = 20 MHz I C = 300 A BW = 1 Hz IE = 0 8 15 80 dB pF pF V CB = 10 V Emitter-Base IC = 0 V EB = 0.5 V Capacitance Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/4 2N2102 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 2N2102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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