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APT50M60JVFR 500V 63A 0.060 S D POWER MOS V(R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. S G SO 2 T- 27 "UL Recognized" ISOTOP (R) * Popular SOT-227 Package * Faster Switching * Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * Avalanche Energy Rated * FAST RECOVERY BODY DIODE G S D All Ratings: TC = 25C unless otherwise specified. APT50M60JVFR UNIT Volts Amps 500 63 252 30 40 568 4.55 -55 to 150 300 63 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 500 0.060 250 1000 100 2 4 (VGS = 10V, ID = 31.5A) Ohms A nA Volts 5-2004 050-7265 Rev A Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT50M60JVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 63A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 63A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 333V, VGS = 15V ID = 63A, RG = 5 ID = 63A, RG = 5 RG = 0.6 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 10600 1800 795 560 70 285 20 25 80 10 1235 2820 1700 2900 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns C Amps 63 252 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -63A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -63A, di/dt = 100A/s) Reverse Recovery Charge (IS = -63A, di/dt = 100A/s) Peak Recovery Current (IS = -63A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient 300 600 2.6 10 17 34 TYP MAX THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W 0.22 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.25 , THERMAL IMPEDANCE (C/W) 4 Starting Tj = +25C, L = 1.61mH, RG = 25, Peak IL = 63A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID63A di/dt 700A/s VR 500V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 0.9 0.15 0.7 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 10-1 5-2004 Note: PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 050-7265 Rev A Z JC 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Junction temp. (C) RC MODEL 200 180 160 140 120 100 80 60 40 20 0 APT50M60JVFR VGS =15 & 10V 8V 0.0516 0.0260F 7.5V 7V Power (watts) 0.149 0.448F 6.5V 6V 5.5V 0.0198 Case temperature. (C) 42.3F FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 140 ID, DRAIN CURRENT (AMPERES) 120 100 80 60 40 20 0 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS NORMALIZED TO = 10V @ 31.5A 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 TJ = -55C TJ = +25C TJ = +125C 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 0 70 60 50 40 30 20 10 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D 25 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 = 31.5A V GS = 10V 2.0 1.5 1.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7265 Rev A 5-2004 252 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 20,000 10,000 C, CAPACITANCE (pF) APT50M60JVFR Ciss 100 50 100S Coss 1,000 Crss 10 5 TC =+25C TJ =+150C SINGLE PULSE 1mS 10mS VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I D = 63A IDR, REVERSE DRAIN CURRENT (AMPERES) 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 1 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C 100 12 VDS = 100V 8 VDS = 250V TJ =+25C 10 4 VDS = 400V 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 700 600 500 400 300 200 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 250 V DD G 1 = 333V R = 5 td(off) V DD G 200 T = 125C J L = 100H td(on) and td(off) (ns) tf = 333V R = 5 T = 125C J L = 100H tr and tf (ns) 150 100 50 100 0 10 td(on) 70 90 110 130 ID (A) FIGURE 14, DELAY TIMES vs CURRENT DD G tr 30 50 70 90 110 130 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 25,000 V I DD 0 10 30 50 7,000 6,000 SWITCHING ENERGY (J) V = 333V = 333V R = 5 D J = 63A T = 125C J 5,000 4,000 3,000 2,000 1,000 L = 100H EON includes diode reverse recovery. SWITCHING ENERGY (J) 20,000 T = 125C L = 100H EON includes diode reverse recovery. Eoff 15,000 10,000 Eon 5-2004 Eoff Eon 5,000 050-7265 Rev A 70 90 110 130 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 10 30 50 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5 Typical Performance Curves APT50M60JVFR 10% Gate Voltage TJ125C 90% Gate Voltage td(on) 90% Drain Current td(off) 90% Drain Voltage T 125C J tr 5% 10% Switching Energy Drain Voltage Switching Energy tf 10% 0 Drain Current 5% Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT60DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. Gate APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7265 Rev A 5-2004 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) |
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