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DTV32G-1500B
(CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE
MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS HIGH BREAKDOWN VOLTAGE CAPABILITY HIGH FREQUENCY OPERATION SPECIFIED TURN ON SWITCHING CHARACTERISTICS TYPICAL TOTAL LOSSES: 3.5 W (IFpeak = 6 A, F = 56 kHz) SUITABLE WITH BUH TRANSISTORS SERIES SMD PACKAGE DESCRIPTION High voltage diode especially designed for horizontal deflection stage in standard and high resolution displays for TV's and monitors. This device is packaged in D2PAK. 6A 1500 V 1.5 V
K
NC
D2PAK
ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) VRRM VRWM IF(AV) IFSM Tstg Tj RMS forward current Repetitive Peak Reverse Voltage Reverse Working Voltage Average forward current = 0.5 Tc=130C tp = 10ms sinusoidal Parameter Value 15 1500 1350 6 100 - 40 to 150 150 Unit A V V A A C
Surge Non Repetitive Forward Current Storage Temperature Maximum Operating JunctionTtemperature
November 1997 - Ed: 2
A
A
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DTV32G-1500B
THERMAL RESISTANCE Symbol Rth(j-c) Junction to Case Parameter Value 2 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR
*
Test Conditions VR = VRWM Tj = 25C Tj = 100C
Min
Typ
Max 200 1 1.5 1.4
Unit A mA V
VF
**
IF =6A
Tj = 25C Tj = 100C
pulse test : * tp = 5 ms , < 2% ** tp = 380 s, < 2%
RECOVERY CHARACTERISTICS Symbol trr (1) Tj = 25C Test Conditions IF = 1 A dIF/dt = -50A/s VR =30V IF = 1 A dIF/dt = -15A/s VR =30V trr Tj = 25C IF = 1 A IR = 100mA 250 140 ns Min Typ Max 175 Unit ns
TURN-ON SWITCHING CHARACTERISTICS Symbol tfr (2) VFp (2) Tj = 100C Test Conditions IF = 6 A VFR = 2 V dIF/dt = 80 A/s Min Typ 0.6 39 Max Unit s V
(1) Test following JEDEC standard (2) Test representativeof the application To evaluate the maximum conduction losses use the following equation : VF = 1.2 + 0.034 IF P = 1.2 x IF(av) + 0.034 x IF2(RMS)
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DTV32G-1500B
Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Peak current versus form factor.
=0.5
T
=tp/T
tp
T
=tp/T
tp
Fig. 3: Average temperature.
current
versus
ambient
Fig. 4: Non repetitive surge peak forward current versus overload duration (maximum values).
IM
=0.5
=0.5
T
=tp/T
tp
Fig. 5: Relative variation of thermal transient impedance junction to case versus pulse duration.
Fig. 6: Forward voltage drop versus forward current (maximum values).
=0.5
T
=tp/T
tp
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DTV32G-1500B
Fig. 7: Junction capacitance versus reverse voltage applied (typical values).
Fig. 8: Recovery charge versus dIF/dt.
Fig. 9: Peak reverse current versus dIF/dt.
Fig. 10: Dynamic parameters versus junction temperature.
;
Fig. 11: Recovery time versus dIF/dt.
Fig. 12: Peak forward voltage versus dIF/dt.
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DTV32G-1500B
BASIC HORIZONTAL DEFLECTION CIRCUIT
+V
TRANSFORMER EHT
LINE YOKE
L T
(BUH715)
D C
(D=DAMPER DIODE DTV32-1500)
BASIC E-W DIODE MODULATOR CIRCUIT
+V
TRANSFORMER EHT
T
(BUH715)
C1 D1
LINE YOKE
L
C2
D2
D1=DTV32-1500
D2=BYT08-400
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DTV32G-1500B
PACKAGE DATA D2PAK DIMENSIONS REF.
A E L2 C2
Millimeters Min. Typ. Max. Min.
Inches Typ. Max. 0.181 0.106 0.009 0.037 0.055 0.024 0.054 0.368 0.405 0.208 0.624 0.054 0.069 0.016 8 0 8
A A1
D
4.30 2.49 0.03 0.70 1.25 0.45 1.21 9.00 10.00 4.88 15.00 1.27 1.40 0.40 0
4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027 1.40 0.049 0.60 0.017 1.36 0.047 9.35 0.354 10.28 0.393 5.28 0.192 15.85 0.590 1.37 0.050 1.75 0.055
A2 B
L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R
B2 C C2 D E G L L2 L3 R V2
Marking: DTV32G-1500B Cooling method : C. Weight : 1.8 g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Micr oelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in lif esupport devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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